Electroluminescence at 1.54 {mu}m in Si:Er/Si structures grown by sublimation molecular-beam epitaxy

Journal Article · Sat Jul 15 04:00:00 EDT 2006 · Semiconductors

DOI:https://doi.org/10.1134/S1063782606070207· OSTI ID:21088503

Remizov, D Yu ^[1]; Shabanov, V N; Rubtsova, R A ^[2]; Stepikhova, M V; Kryzhov, D I ^[1]; Shushunov, A N; Belova, O V ^[2]; Krasil'nik, Z F ^[1]; Maksimov, G A ^[2]

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1. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
2. Nizhni Novgorod State University, Physicotechnical Research Institute (Russian Federation)

In Si:Er/Si diode structures grown by sublimation molecular-beam epitaxy in a vacuum with a pressure of {approx}10{sup -7} mbar at temperatures 520-580 deg. C, the intensity of room-temperature electroluminescence at 1.54 {mu}m is studied as a function of the concentration and distribution of erbium and donor impurities in the space-charge region (SCR) and the SCR width. Methods for obtaining electroluminescence in diodes with a wide (0.1-1 {mu}m) SCR are developed. The mean free path of electrons with respect to their interaction with Er centers and the threshold energy a free electron needs in order to excite an Er-shell electron are determined. The values of electric-field strength corresponding to breakdown in silicon p-i-n diodes with and without Er doping are obtained experimentally. A model describing the interaction of hot electrons with Er centers is suggested.

• OSTI ID: 21088503
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 7 Vol. 40; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DISTRIBUTION
ELECTRIC FIELDS
ELECTROLUMINESCENCE
ELECTRONS
ERBIUM
MEAN FREE PATH
MOLECULAR BEAM EPITAXY
SILICON
SPACE CHARGE
SUBLIMATION
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K
THRESHOLD ENERGY