Si:Er/Si diode structures for observing room-temperature electroluminescence at a wavelength of 1.54 {mu}m
- Lobachevsky State University of Nizhni Novgorod, Physico-Technical Research Institute (Russian Federation)
- Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
Si:Er/Si diode structures for observing room-temperature electroluminescence at a wavelength of 1.5 {mu}m are analyzed. The structures were grown by sublimation molecular-beam epitaxy. Some ways to increase the electroluminescence intensity are discussed.
- OSTI ID:
- 21562328
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 3 Vol. 44; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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