Low-temperature growth of silicon epitaxial layers codoped with erbium and oxygen atoms
- Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
The fabrication technology and properties of light-emitting Si structures codoped with erbium and oxygen are reported. The layers are deposited onto (100) Si by molecular beam epitaxy (MBE) using an Er-doped silicon sublimation source. The partial pressure of the oxygen-containing gases in the growth chamber of the MBE facility before layer growth is lower than 5 Multiplication-Sign 10{sup -10} Torr. The oxygen and erbium concentrations in the Si layers grown at 450 Degree-Sign C is {approx}1 Multiplication-Sign 10{sup 19} and 10{sup 18} cm{sup -3}, respectively. The silicon epitaxial layers codoped with erbium and oxygen have high crystal quality and yield effective photoluminescence and electroluminescence signals with the dominant optically active Er-1 center forming upon postgrowth annealing at a temperature of 800 Degree-Sign C.
- OSTI ID:
- 22105536
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 3 Vol. 47; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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