Molecular beam epitaxial growth and optical properties of red-emitting ({lambda} = 650 nm) InGaN/GaN disks-in-nanowires on silicon

Journal Article · Mon Feb 18 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4793300· OSTI ID:22162745

Jahangir, S.; Bhattacharya, P. ^[1]; Mandl, M.; Strassburg, M. ^[2]

---

1. Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)
2. OSRAM Opto Semiconductors GmbH, Leibnizstr. 4, Regensburg (Germany)

We have investigated the radiative properties of InGaN disks in GaN nanowires grown by plasma enhanced molecular beam epitaxy on (001) silicon substrates. The growth of the nanowire heterostructures has been optimized to maximize the radiative efficiency, or internal quantum efficiency (IQE), for photoluminescence emission at {lambda} = 650 nm. It is found that the IQE increases significantly (by {approx}10%) to 52%, when post-growth passivation of nanowire surface with silicon nitride or parylene is applied. The increase in efficiency is supported by radiative- and nonradiative lifetimes derived from data obtained from temperature dependent- and time-resolved photoluminescence measurements. Light emitting diodes with p-i-n disk-in-nanowire heterostructures passivated with parylene have been fabricated and characterized.

• OSTI ID: 22162745
• Journal Information: Applied Physics Letters, Vol. 102, Issue 7; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
FABRICATION
GALLIUM NITRIDES
INDIUM COMPOUNDS
LIFETIME
LIGHT EMITTING DIODES
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
OPTIMIZATION
PASSIVATION
PHOTOLUMINESCENCE
P-N JUNCTIONS
QUANTUM EFFICIENCY
QUANTUM WIRES
SEMICONDUCTOR MATERIALS
SILICON
SILICON NITRIDES
SPECTRA
TEMPERATURE DEPENDENCE
TIME RESOLUTION