Structural and optical properties of InGaN-GaN nanowire heterostructures grown by molecular beam epitaxy

Journal Article · Sat Jan 01 00:00:00 EST 2011 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3530634· OSTI ID:21538032

Limbach, F; Gotschke, T; Stoica, T; Calarco, R; Gruetzmacher, D ^[1]; Sutter, E; Ciston, J ^[2]; Cusco, R; Artus, L ^[3]; Kremling, S; Hoefling, S; Worschech, L ^[4]

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1. Institute of Bio- and Nanosystems (IBN-1), Research Centre Juelich GmbH and JARA-FIT Fundamentals of Future Information Technology, 52425 Juelich (Germany)
2. Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973 (United States)
3. Institut Jaume Almera, Consell Superior d'Investigacions Cientifiques (CSIC), 08028 Barcelona, Catalonia (Spain)
4. Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, University of Wurzburg, D-97070 Wurzburg (Germany)

InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, {mu}-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

• OSTI ID: 21538032
• Journal Information: Journal of Applied Physics, Vol. 109, Issue 1; Other Information: DOI: 10.1063/1.3530634; (c) 2011 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
COMPARATIVE EVALUATIONS
CRYSTALLOGRAPHY
GALLIUM NITRIDES
IMAGES
INDIUM COMPOUNDS
LATTICE PARAMETERS
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
PHONONS
PHOTOLUMINESCENCE
PHOTOVOLTAIC EFFECT
PLASMA
QUANTUM WIRES
RAMAN SPECTRA
RESOLUTION
SEMICONDUCTOR MATERIALS
TRANSMISSION ELECTRON MICROSCOPY
CRYSTAL GROWTH METHODS
ELECTRON MICROSCOPY
EMISSION
EPITAXY
EVALUATION
GALLIUM COMPOUNDS
LUMINESCENCE
MATERIALS
MICROSCOPY
NANOSTRUCTURES
NITRIDES
NITROGEN COMPOUNDS
PHOTOELECTRIC EFFECT
PHOTON EMISSION
PHYSICAL PROPERTIES
PNICTIDES
QUASI PARTICLES
SPECTRA