Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy

Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Hofling, S.; Worschech, L.; Grutzmacher, D.

doi:10.1063/1.3530634

Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy

Journal Article · Fri Dec 31 23:00:00 EST 2010 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3530634· OSTI ID:1076502

Limbach, F. ^[1]; Gotschke, T. ^[2]; Stoica, T. ^[1]; Calarco, R. ^[1]; Sutter, E. ^[3]; Ciston, J. ^[3]; Cusco, R. ^[4]; Artus, L. ^[4]; Kremling, S. ^[5]; Hofling, S. ^[5]; Worschech, L. ^[5]; Grutzmacher, D. ^[6]

Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany)
Institute of Bio- and Nanosystems (IBN-1), Research Centre JÃ¼lich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany)
Brookhaven National Lab. (BNL), Upton, NY (United States)
Inst. Juame Almera, Barcelona (Spain)
Univ. of Wurzburg (Germany)
Institute of Bio- and Nanosystems (IBN-1), Research Centre Juelich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany)

InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

View Accepted Manuscript (DOE)

Research Organization:: Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of FutureInformation Technology (Germany); Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE EE Office of Technology Development (EE-20)

OSTI ID:: 1076502

Alternate ID(s):: OSTI ID: 21538032

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 1 Vol. 109; ISSN JAPIAU; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

References (41)

GaN-based nanowires: From nanometric-scale characterization to light emitting diodes Bavencove, A. -L.; Tourbot, G.; Pougeoise, E. physica status solidi (a), Vol. 207, Issue 6 https://doi.org/10.1002/pssa.200983603	journal	May 2010
Formation of InGaN quantum dots in regularly arranged GaN nanocolumns grown by rf-plasma-assisted molecular-beam epitaxy Sekiguchi, Hiroto; Kishino, Katsumi; Kikuchi, Akihiko physica status solidi (c), Vol. 7, Issue 10 https://doi.org/10.1002/pssc.201083915	journal	July 2010
Interface and Wetting Layer Effect on the Catalyst-Free Nucleation and Growth of GaN Nanowires Stoica, Toma; Sutter, Eli; Meijers, Ralph J. Small, Vol. 4, Issue 6 https://doi.org/10.1002/smll.200700936	journal	June 2008
The Blue Laser Diode Nakamura, Shuji; Pearton, Stephen; Fasol, Gerhard https://doi.org/10.1007/978-3-662-04156-7	book	January 2000
GaN and InN nanowires grown by MBE: A comparison Calarco, R.; Marso, M. Applied Physics A, Vol. 87, Issue 3 https://doi.org/10.1007/s00339-007-3871-6	journal	March 2007
InGaN nanorod arrays grown by molecular beam epitaxy: Growth mechanism structural and optical properties Wu, K. M.; Pan, Y.; Liu, C. Applied Surface Science, Vol. 255, Issue 13-14 https://doi.org/10.1016/j.apsusc.2009.02.065	journal	April 2009
GaN-nanowhiskers: MBE-growth conditions and optical properties Meijers, R.; Richter, T.; Calarco, R. Journal of Crystal Growth, Vol. 289, Issue 1 https://doi.org/10.1016/j.jcrysgro.2005.11.117	journal	March 2006
MBE growth optimization of InN nanowires Stoica, T.; Meijers, R.; Calarco, R. Journal of Crystal Growth, Vol. 290, Issue 1 https://doi.org/10.1016/j.jcrysgro.2005.12.106	journal	April 2006
Improved Ti-mask selective-area growth (SAG) by rf-plasma-assisted molecular beam epitaxy demonstrating extremely uniform GaN nanocolumn arrays Kishino, Katsumi; Sekiguchi, Hiroto; Kikuchi, Akihiko Journal of Crystal Growth, Vol. 311, Issue 7 https://doi.org/10.1016/j.jcrysgro.2008.11.056	journal	March 2009
The State of Strain in Single GaN Nanocolumns As Derived from Micro-Photoluminescence Measurements Thillosen, Nicolas; Sebald, Kathrin; Hardtdegen, Hilde Nano Letters, Vol. 6, Issue 4 https://doi.org/10.1021/nl052456q	journal	April 2006
Defect Distribution along Single GaN Nanowhiskers Cavallini, Anna; Polenta, Laura; Rossi, Marco Nano Letters, Vol. 6, Issue 7 https://doi.org/10.1021/nl060332n	journal	July 2006
Photoluminescence and Intrinsic Properties of MBE-Grown InN Nanowires Stoica, Toma; Meijers, Ralph J.; Calarco, Raffaella Nano Letters, Vol. 6, Issue 7 https://doi.org/10.1021/nl060547x	journal	July 2006
Nucleation and Growth of GaN Nanowires on Si(111) Performed by Molecular Beam Epitaxy Calarco, Raffaella; Meijers, Ralph J.; Debnath, Ratan K. Nano Letters, Vol. 7, Issue 8 https://doi.org/10.1021/nl0707398	journal	August 2007
Exciton and Biexciton Luminescence from Single GaN/AlN Quantum Dots in Nanowires Renard, Julien; Songmuang, Rudeesun; Bougerol, Catherine Nano Letters, Vol. 8, Issue 7 https://doi.org/10.1021/nl0800873	journal	July 2008
Catalyst-Free InGaN/GaN Nanowire Light Emitting Diodes Grown on (001) Silicon by Molecular Beam Epitaxy Guo, Wei; Zhang, Meng; Banerjee, Animesh Nano Letters, Vol. 10, Issue 9 https://doi.org/10.1021/nl101027x	journal	September 2010
Investigation on Localized States in GaN Nanowires Polenta, L.; Rossi, M.; Cavallini, A. ACS Nano, Vol. 2, Issue 2 https://doi.org/10.1021/nn700386w	journal	February 2008
Complete composition tunability of InGaN nanowires using a combinatorial approach Kuykendall, Tevye; Ulrich, Philipp; Aloni, Shaul Nature Materials, Vol. 6, Issue 12 https://doi.org/10.1038/nmat2037	journal	October 2007
Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system Wu, J.; Walukiewicz, W.; Yu, K. M. Journal of Applied Physics, Vol. 94, Issue 10 https://doi.org/10.1063/1.1618353	journal	November 2003
Raman-scattering study of the InGaN alloy over the whole composition range Hernández, S.; Cuscó, R.; Pastor, D. Journal of Applied Physics, Vol. 98, Issue 1 https://doi.org/10.1063/1.1940139	journal	July 2005
Wurtzite GaN nanocolumns grown on Si(001) by molecular beam epitaxy Cerutti, L.; Ristić, J.; Fernández-Garrido, S. Applied Physics Letters, Vol. 88, Issue 21 https://doi.org/10.1063/1.2204836	journal	May 2006
Origin of high oscillator strength in green-emitting InGaN∕GaN nanocolumns Kawakami, Y.; Suzuki, S.; Kaneta, A. Applied Physics Letters, Vol. 89, Issue 16 https://doi.org/10.1063/1.2363958	journal	October 2006
Mechanism of molecular beam epitaxy growth of GaN nanowires on Si(111) Debnath, R. K.; Meijers, R.; Richter, T. Applied Physics Letters, Vol. 90, Issue 12 https://doi.org/10.1063/1.2715119	journal	March 2007
Optical and structural study of GaN nanowires grown by catalyst-free molecular beam epitaxy. I. Near-band-edge luminescence and strain effects Robins, Lawrence H.; Bertness, Kris A.; Barker, Joy M. Journal of Applied Physics, Vol. 101, Issue 11 https://doi.org/10.1063/1.2736264	journal	June 2007
Axial and radial growth of Ni-induced GaN nanowires Geelhaar, L.; Chèze, C.; Weber, W. M. Applied Physics Letters, Vol. 91, Issue 9 https://doi.org/10.1063/1.2776979	journal	August 2007
High efficiency green, yellow, and amber emission from InGaN/GaN dot-in-a-wire heterostructures on Si(111) Chang, Y. -L.; Wang, J. L.; Li, F. Applied Physics Letters, Vol. 96, Issue 1 https://doi.org/10.1063/1.3284660	journal	January 2010
InGaN/GaN nanorod array white light-emitting diode Lin, Hon-Way; Lu, Yu-Jung; Chen, Hung-Ying Applied Physics Letters, Vol. 97, Issue 7 https://doi.org/10.1063/1.3478515	journal	August 2010
Properties of GaN and related compounds studied by means of Raman scattering Harima, Hiroshi Journal of Physics: Condensed Matter, Vol. 14, Issue 38 https://doi.org/10.1088/0953-8984/14/38/201	journal	September 2002
Raman scattering of quasimodes in ZnO Alarcón-Lladó, E.; Cuscó, R.; Artús, L. Journal of Physics: Condensed Matter, Vol. 20, Issue 44 https://doi.org/10.1088/0953-8984/20/44/445211	journal	October 2008
InGaN nanopillars grown on silicon substrate using plasma assisted molecular beam epitaxy Vajpeyi, A. P.; Ajagunna, A. O.; Tsagaraki, K. Nanotechnology, Vol. 20, Issue 32 https://doi.org/10.1088/0957-4484/20/32/325605	journal	July 2009
Quantum confined Stark effect of InGaN/GaN multi-quantum disks grown on top of GaN nanorods Park, Young S.; Holmes, Mark J.; Kang, Tae W. Nanotechnology, Vol. 21, Issue 11 https://doi.org/10.1088/0957-4484/21/11/115401	journal	February 2010
Multicolour luminescence from InGaN quantum wells grown over GaN nanowire arrays by molecular-beam epitaxy Armitage, R.; Tsubaki, K. Nanotechnology, Vol. 21, Issue 19 https://doi.org/10.1088/0957-4484/21/19/195202	journal	April 2010
Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy Calleja, E.; Sánchez-García, M. A.; Sánchez, F. J. Physical Review B, Vol. 62, Issue 24 https://doi.org/10.1103/physrevb.62.16826	journal	December 2000
Evidence for quantum-confined Stark effect in GaN/AlN quantum dots in nanowires Renard, J.; Songmuang, R.; Tourbot, G. Physical Review B, Vol. 80, Issue 12 https://doi.org/10.1103/physrevb.80.121305	journal	September 2009
Columnar AlGaN / GaN Nanocavities with AlN / GaN Bragg Reflectors Grown by Molecular Beam Epitaxy on Si(111) Ristić, Jelena; Calleja, Enrique; Trampert, Achim Physical Review Letters, Vol. 94, Issue 14 https://doi.org/10.1103/physrevlett.94.146102	journal	April 2005
InGaN/GaN nanocolumn LEDs emitting from blue to red Kishino, K.; Kikuchi, A.; Sekiguchi, H. Integrated Optoelectronic Devices 2007, SPIE Proceedings https://doi.org/10.1117/12.695168	conference	February 2007
Solid-State Light Sources Getting Smart Schubert, E. F. Science, Vol. 308, Issue 5726 https://doi.org/10.1126/science.1108712	journal	May 2005
Strong green photoluminescence from InxGa_1-xN/GaN nanorod arrays Hong, Chi-Chang; Ahn, Hyeyoung; Wu, Chen-Ying Optics Express, Vol. 17, Issue 20 https://doi.org/10.1364/oe.17.017227	journal	January 2009
Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy Calleja, E.; Sánchez-García, M. A.; Sánchez, F. J. Physical Review B, Vol. 62, Issue 24 https://doi.org/10.1103/PhysRevB.62.16826	journal	December 2000
Evidence for quantum-confined Stark effect in GaN/AlN quantum dots in nanowires Renard, J.; Songmuang, R.; Tourbot, G. Physical Review B, Vol. 80, Issue 12 https://doi.org/10.1103/PhysRevB.80.121305	journal	September 2009
Columnar AlGaN / GaN Nanocavities with AlN / GaN Bragg Reflectors Grown by Molecular Beam Epitaxy on Si(111) Ristić, Jelena; Calleja, Enrique; Trampert, Achim Physical Review Letters, Vol. 94, Issue 14 https://doi.org/10.1103/PhysRevLett.94.146102	journal	April 2005
Strong green photoluminescence from InxGa_1-xN/GaN nanorod arrays Hong, Chi-Chang; Ahn, Hyeyoung; Wu, Chen-Ying Optics Express, Vol. 17, Issue 20 https://doi.org/10.1364/OE.17.017227	journal	January 2009

Cited By (3)

Engineering the Carrier Dynamics of InGaN Nanowire White Light-Emitting Diodes by Distributed p-AlGaN Electron Blocking Layers Nguyen, Hieu Pham Trung; Djavid, Mehrdad; Woo, Steffi Y. Scientific Reports, Vol. 5, Issue 1 https://doi.org/10.1038/srep07744	journal	January 2015
Circumventing the miscibility gap in InGaN nanowires emitting from blue to red Roche, Elissa; André, Yamina; Avit, Geoffrey Nanotechnology, Vol. 29, Issue 46 https://doi.org/10.1088/1361-6528/aaddc1	journal	September 2018
Polarity of GaN nanowires grown by plasma-assisted molecular beam epitaxy on Si(111) Hestroffer, Karine; Leclere, Cédric; Bougerol, Catherine Physical Review B, Vol. 84, Issue 24 https://doi.org/10.1103/physrevb.84.245302	journal	December 2011

Similar Records

Structural and Optical Properties of InGaN-GaN Nanowire Heterostructures Grown by Molecular Beam Epitaxy

Journal Article · Fri Dec 31 23:00:00 EST 2010 · Journal of Applied Physics · OSTI ID:1004146

Structural and optical properties of InGaN-GaN nanowire heterostructures grown by molecular beam epitaxy

Journal Article · Fri Dec 31 23:00:00 EST 2010 · Journal of Applied Physics · OSTI ID:21538032

Green luminescence of InGaN nanowires grown on silicon substrates by molecular beam epitaxy

Journal Article · Fri Apr 15 00:00:00 EDT 2011 · Journal of Applied Physics · OSTI ID:21560188

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
CATALYST-FREE
GANIN
INGAN ON GAN
MBE
NANOWIRE

Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy

Citation Formats

References (41)

Cited By (3)

Similar Records

Related Subjects