Univ. of New Mexico, Albuquerque, NM (United States). Center for High Technology Materials
Univ. of New Mexico, Albuquerque, NM (United States). Center for High Technology Materials; Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies
In this work, we demonstrate high-performance electrically injected GaN/InGaN core-shell nanowire-based LEDs grown using selective-area epitaxy and characterize their electro-optical properties. To assess the quality of the quantum wells, we measure the internal quantum efficiency (IQE) using conventional low temperature/room temperature integrated photoluminescence. The quantum wells show a peak IQE of 62%, which is among the highest reported values for nanostructure-based LEDs. Time-resolved photoluminescence (TRPL) is also used to study the carrier dynamics and response times of the LEDs. TRPL measurements yield carrier lifetimes in the range of 1–2 ns at high excitation powers. To examine the electrical performance of the LEDs, current density–voltage (J-V) and light-current density-voltage (L-J-V) characteristics are measured. We also estimate the peak external quantum efficiency (EQE) to be 8.3% from a single side of the chip with no packaging. The LEDs have a turn-on voltage of 2.9 V and low series resistance. Based on FDTD simulations, the LEDs exhibit a relatively directional far-field emission pattern in the range of ±15°. This work demonstrates that it is feasible for electrically injected nanowire-based LEDs to achieve the performance levels needed for a variety of optical device applications.
Nami, Mohsen, Stricklin, Isaac E., DaVico, Kenneth M., Mishkat-Ul-Masabih, Saadat, Rishinaramangalam, Ashwin K., Brueck, S. R. J., Brener, Igal, & Feezell, Daniel F. (2018). Carrier Dynamics and Electro-Optical Characterization of High-Performance GaN/InGaN Core-Shell Nanowire Light-Emitting Diodes. Scientific Reports, 8. https://doi.org/10.1038/s41598-017-18833-6
Nami, Mohsen, Stricklin, Isaac E., DaVico, Kenneth M., et al., "Carrier Dynamics and Electro-Optical Characterization of High-Performance GaN/InGaN Core-Shell Nanowire Light-Emitting Diodes," Scientific Reports 8 (2018), https://doi.org/10.1038/s41598-017-18833-6
@article{osti_1472261,
author = {Nami, Mohsen and Stricklin, Isaac E. and DaVico, Kenneth M. and Mishkat-Ul-Masabih, Saadat and Rishinaramangalam, Ashwin K. and Brueck, S. R. J. and Brener, Igal and Feezell, Daniel F.},
title = {Carrier Dynamics and Electro-Optical Characterization of High-Performance GaN/InGaN Core-Shell Nanowire Light-Emitting Diodes},
annote = {In this work, we demonstrate high-performance electrically injected GaN/InGaN core-shell nanowire-based LEDs grown using selective-area epitaxy and characterize their electro-optical properties. To assess the quality of the quantum wells, we measure the internal quantum efficiency (IQE) using conventional low temperature/room temperature integrated photoluminescence. The quantum wells show a peak IQE of 62%, which is among the highest reported values for nanostructure-based LEDs. Time-resolved photoluminescence (TRPL) is also used to study the carrier dynamics and response times of the LEDs. TRPL measurements yield carrier lifetimes in the range of 1–2 ns at high excitation powers. To examine the electrical performance of the LEDs, current density–voltage (J-V) and light-current density-voltage (L-J-V) characteristics are measured. We also estimate the peak external quantum efficiency (EQE) to be 8.3% from a single side of the chip with no packaging. The LEDs have a turn-on voltage of 2.9 V and low series resistance. Based on FDTD simulations, the LEDs exhibit a relatively directional far-field emission pattern in the range of ±15°. This work demonstrates that it is feasible for electrically injected nanowire-based LEDs to achieve the performance levels needed for a variety of optical device applications.},
doi = {10.1038/s41598-017-18833-6},
url = {https://www.osti.gov/biblio/1472261},
journal = {Scientific Reports},
issn = {ISSN 2045-2322},
volume = {8},
place = {United States},
publisher = {Nature Publishing Group},
year = {2018},
month = {01}}