Evaporation-assisted high-power impulse magnetron sputtering: The deposition of tungsten oxide as a case study

Journal Article · Sun Jul 15 00:00:00 EDT 2012 · Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films

DOI:https://doi.org/10.1116/1.4722728· OSTI ID:22098890

Hemberg, Axel; Dauchot, Jean-Pierre; Snyders, Rony; Konstantinidis, Stephanos ^[1]

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1. Materia Nova Research Center-Parc Initialis, 1, Avenue Copernic, B-7000 Mons, Belgium and Chimie des Interactions Plasma-Surface, CIRMAP, Universite de Mons-20, Place du Parc, B-7000 Mons (Belgium)

The deposition rate during the synthesis of tungsten trioxide thin films by reactive high-power impulse magnetron sputtering (HiPIMS) of a tungsten target increases, above the dc threshold, as a result of the appropriate combination of the target voltage, the pulse duration, and the amount of oxygen in the reactive atmosphere. This behavior is likely to be caused by the evaporation of the low melting point tungsten trioxide layer covering the metallic target in such working conditions. The HiPIMS process is therefore assisted by thermal evaporation of the target material.

• OSTI ID: 22098890
• Journal Information: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 30, Issue 4; Other Information: (c) 2012 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CONTROLLED ATMOSPHERES
ELECTRIC POTENTIAL
EVAPORATION
MAGNETRONS
MELTING POINTS
OXYGEN
PULSES
SPUTTERING
TARGETS
THIN FILMS
TUNGSTEN OXIDES
VACUUM COATING
WORKING CONDITIONS