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Deposition Rates of High Power Impulse Magnetron Sputtering: Physics and Economics

Journal Article · · Journal of Vacuum Science and Technology A
OSTI ID:980781
Deposition by high power impulse magnetron sputtering (HIPIMS) is considered by some as the new paradigm of advanced sputtering technology, yet this is met with skepticism by others for the reported lower deposition rates, if compared to rates of more conventional sputtering of equal average power. In this contribution, the underlying physical reasons for the rate changes are discussed, including (i) ion return to the target and self-sputtering, (ii) the less-than-linear increase of the sputtering yield with increasing ion energy, (iii) yield changes due to the shift of species responsible for sputtering, (iv) changes to due to greater film density, limited sticking, and self-sputtering on the substrate, (v) noticeable power losses in the switch module, (vi) changes of the magnetic balance and particle confinement of the magnetron due to self-fields at high current, and (vii) superposition of sputtering and sublimation/evaporation for selected materials. The situation is even more complicated for reactive systems where the target surface chemistry is a function of the reactive gas partial pressure and discharge conditions. While most of these factors imply a reduction of the normalized deposition rate, increased rates have been reported for certain conditions using hot targets and less poisoned targets. Finally, some points of economics and HIPIMS benefits considered.
Research Organization:
Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)
Sponsoring Organization:
Accelerator& Fusion Research Division; Environmental Energy Technologies Division
DOE Contract Number:
AC02-05CH11231
OSTI ID:
980781
Report Number(s):
LBNL-2895E
Journal Information:
Journal of Vacuum Science and Technology A, Journal Name: Journal of Vacuum Science and Technology A
Country of Publication:
United States
Language:
English

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