Graphene layer growth on silicon substrates with nickel film by pulse arc plasma deposition

Journal Article · Mon Oct 15 00:00:00 EDT 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4761474· OSTI ID:22080498

Fujita, K; Banno, K; Aryal, H R; Egawa, T ^[1]

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1. Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-Ku, Nagoya 466-8555 (Japan)

Carbon layer has been grown on a Ni/SiO{sub 2}/Si(111) substrate under high vacuum pressure by pulse arc plasma deposition. From the results of Raman spectroscopy for the sample, it is found that graphene was formed by ex-situ annealing of sample grown at room temperature. Furthermore, for the sample grown at high temperature, graphene formation was shown and optimum temperature was around 1000 Degree-Sign C. Transmission electron microscopy observation of the sample suggests that the graphene was grown from step site caused by grain of Ni film. The results show that the pulse arc plasma technique has the possibility for acquiring homogenous graphene layer with controlled layer thickness.

• OSTI ID: 22080498
• Journal Information: Applied Physics Letters, Vol. 101, Issue 16; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ANNEALING
DEPOSITION
GRAPHENE
LAYERS
NICKEL
PLASMA
RAMAN SPECTRA
RAMAN SPECTROSCOPY
SILICON
SILICON OXIDES
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
THICKNESS
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY