BF{sub 3} PIII modeling: Implantation, amorphisation and diffusion

Journal Article · Tue Nov 06 00:00:00 EST 2012 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4766532· OSTI ID:22075706

Essa, Z; Cristiano, F; Spiegel, Y; Boulenc, P; Qiu, Y; Quillec, M; Taleb, N; Burenkov, A; Hackenberg, M; Bedel-Pereira, E; Mortet, V; Torregrosa, Frank; Tavernier, C ^[1]

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1. STMicroelectronics 850 rue Jean Monnet F-38926 Crolles France and LAAS-CNRS 7 av. du Col. Roche 31077 Toulouse (France)

In the race for highly doped ultra-shallow junctions (USJs) in complementary metal oxide semi-conductor (CMOS) technologies, plasma immersion ion implantation (PIII) is a promising alternative to traditional beamline implantation. Currently, no commercial technology computer aided design (TCAD) process simulator allows modeling the complete USJ fabrication process by PIII, including as-implanted dopant profiles, damage formation, dopant diffusion and activation. In this work, a full simulation of a p-type BF{sub 3} PIII USJ has been carried out. In order to investigate the various physical phenomena mentioned above, process conditions included a high energy/high dose case (10 kV, 5 Multiplication-Sign 10{sup 15} cm{sup -2}), specifically designed to increase damage formation, as well as more technology relevant implant conditions (0.5 kV) for comparison. All implanted samples were annealed at different temperatures and times. As implanted profiles for both boron and fluorine in BF{sub 3} implants were modeled and compared to Secondary Ion Mass Spectrometry (SIMS) measurements. Amorphous/crystalline (a/c) interface depths were measured by transmission electron microscopy (TEM) and successfully simulated. Diffused profiles simulations agreed with SIMS data at low thermal budgets. A boron peak behind the a/c interface was observed in all annealed SIMS profiles for the 10 kV case, indicating boron trapping from EOR defects in this region even after high thermal budgets. TEM measurements on the annealed samples showed an end of range (EOR) defects survival behind the a/c interface, including large dislocation loops (DLs) lying on (001) plane parallel to the surface. In the last part of this work, activation simulations were compared to Hall measurements and confirmed the need to develop a (001) large BICs model.

• OSTI ID: 22075706
• Journal Information: AIP Conference Proceedings, Vol. 1496, Issue 1; Conference: 19. international conference on ion implantation technology, Valladolid (Spain), 25-29 Jun 2012; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
AMORPHOUS STATE
ANNEALING
BORON
BORON FLUORIDES
COMPARATIVE EVALUATIONS
DIFFUSION
DISLOCATIONS
DOPED MATERIALS
HALL EFFECT
INTERFACES
ION IMPLANTATION
ION MICROPROBE ANALYSIS
MASS SPECTROSCOPY
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SILICON
SURFACES
TRANSMISSION ELECTRON MICROSCOPY
TRAPPING