A InGaN/GaN quantum dot green ({lambda}=524 nm) laser

Journal Article · Mon May 30 00:00:00 EDT 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3596436· OSTI ID:21518462

Meng, Zhang; Banerjee, Animesh; Lee, Chi-Sen; Hinckley, John M; Bhattacharya, Pallab ^[1]

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1. Department of Electrical Engineering and Computer Science, Center for Nanoscale Photonics and Spintronics, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)

The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/cm{sup 2} at 278 K. The slope and wall plug efficiencies are 0.74 W/A and {approx}1.1%, respectively, at 1.3 kA/cm{sup 2}. The value of T{sub 0}=233 K in the temperature range of 260-300 K.

• OSTI ID: 21518462
• Journal Information: Applied Physics Letters, Vol. 98, Issue 22; Other Information: DOI: 10.1063/1.3596436; (c) 2011 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CLOSURES
CURRENT DENSITY
EFFICIENCY
EMISSION
GALLIUM NITRIDES
INDIUM COMPOUNDS
ION BEAMS
LASERS
MOLECULAR BEAM EPITAXY
PEAKS
PLASMA
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
SUBSTRATES
TEMPERATURE RANGE
TERNARY ALLOY SYSTEMS
THRESHOLD CURRENT
VISIBLE RADIATION
ALLOY SYSTEMS
BEAMS
CRYSTAL GROWTH METHODS
CURRENTS
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
EPITAXY
GALLIUM COMPOUNDS
MATERIALS
NANOSTRUCTURES
NITRIDES
NITROGEN COMPOUNDS
PNICTIDES
RADIATIONS