Exploitation of a self-limiting process for reproducible formation of ultrathin Ni{sub 1-x}Pt{sub x} silicide films

Journal Article · Mon Dec 20 00:00:00 EST 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3529459· OSTI ID:21518221

Zhen, Zhang; Yu, Zhu; Rossnagel, Steve; Murray, Conal; Jordan-Sweet, Jean ^[1]; Yang, Bin ^[2]; Gaudet, Simon; Desjardins, Patrick ^[3]; Kellock, Andrew J ^[4]; Ozcan, Ahmet ^[5]; Shili, Zhang ^[6]; Lavoie, Christian ^[1]

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1. IBM T.J. Watson Research Center, Yorktown Heights, New York 10598 (United States)
2. GlobalFoundries, Inc., T.J. Watson Research Center, Yorktown Heights, New York 10598 (United States)
3. Ecole Polytechnique de Montreal, Montreal, Quebec H3C 3A7 (Canada)
4. IBM Almaden Research Center, San Jose, California 95120 (United States)
5. IBM Microelectronics, Hopewell Junction, New York 12533 (United States)
6. Solid-State Electronics, The Angstroem Laboratory, Uppsala University, Box 534, SE-751 21 Uppsala (Sweden)

This letter reports on a process scheme to obtain highly reproducible Ni{sub 1-x}Pt{sub x} silicide films of 3-6 nm thickness formed on a Si(100) substrate. Such ultrathin silicide films are readily attained by sputter deposition of metal films, metal stripping in wet chemicals, and final silicidation by rapid thermal processing. This process sequence warrants an invariant amount of metal intermixed with Si in the substrate surface region independent of the initial metal thickness, thereby leading to a self-limiting formation of ultrathin silicide films. The crystallographic structure, thickness, uniformity, and morphological stability of the final silicide films depend sensitively on the initial Pt fraction.

• OSTI ID: 21518221
• Journal Information: Applied Physics Letters, Vol. 97, Issue 25; Other Information: DOI: 10.1063/1.3529459; (c) 2010 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTALLOGRAPHY
DEPOSITION
METALS
NICKEL ALLOYS
NICKEL COMPOUNDS
PLATINUM ALLOYS
PLATINUM COMPOUNDS
SILICIDES
SILICON ALLOYS
SPUTTERING
STABILITY
STRIPPING
SUBSTRATES
SURFACES
THICKNESS
THIN FILMS
ALLOYS
DIMENSIONS
DIRECT REACTIONS
ELEMENTS
FILMS
NUCLEAR REACTIONS
PLATINUM METAL ALLOYS
SILICON COMPOUNDS
TRANSFER REACTIONS
TRANSITION ELEMENT ALLOYS
TRANSITION ELEMENT COMPOUNDS