Phase formation and morphological stability of ultrathin Ni-Co-Pt silicide films formed on Si(100)
Journal Article
·
· Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
- State Key Laboratory of ASIC and System, Fudan University, Shanghai 200433 (China)
- Solid-State Electronics, The Ångström Laboratory, Uppsala University, P.O. Box 534, 75121 Uppsala (Sweden)
- State Key Laboratory of ASIC and System, Fudan University, Shanghai 200433, China and Solid-State Electronics, The Ångström Laboratory, Uppsala University, P.O. Box 534, 75121 Uppsala (Sweden)
Ultrathin Ni, Co, and Pt films, each no more than 4 nm in thickness, as well as their various combinations are employed to investigate the competing growth of epitaxial Co{sub 1-y}Ni{sub y}Si{sub 2} films against polycrystalline Pt{sub 1-z}Ni{sub z}Si. The phase formation critically affects the morphological stability of the resulting silicide films, with the epitaxial films being superior to the polycrystalline ones. Any combination of those metals improves the morphological stability with reference to their parent individual metal silicide films. When Ni, Co, and Pt are all included, the precise initial location of Pt does little to affect the final phase formation in the silicide films and the epitaxial growth of Co{sub 1-x}Ni{sub x}Si{sub 2} films is always perturbed, in accordance to thermodynamics that shows a preferential formation of Pt{sub 1-z}Ni{sub z}Si over that of Co{sub 1-y}Ni{sub y}Si{sub 2}.
- OSTI ID:
- 22258630
- Journal Information:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films Journal Issue: 3 Vol. 32; ISSN 0734-2101; ISSN JVTAD6
- Country of Publication:
- United States
- Language:
- English
Similar Records
Exploitation of a Self-limiting Process for Reproducible Formation of Ultrathin Ni(1-x)Pt(x) Silicide Films
Exploitation of a self-limiting process for reproducible formation of ultrathin Ni{sub 1-x}Pt{sub x} silicide films
Morphological Stability and Specific Resistivity of sub-10 nm Silicide Films of Ni1 xPtx on Si Substrate
Journal Article
·
Fri Dec 30 23:00:00 EST 2011
· Applied Physics Letters
·
OSTI ID:1041789
Exploitation of a self-limiting process for reproducible formation of ultrathin Ni{sub 1-x}Pt{sub x} silicide films
Journal Article
·
Sun Dec 19 23:00:00 EST 2010
· Applied Physics Letters
·
OSTI ID:21518221
Morphological Stability and Specific Resistivity of sub-10 nm Silicide Films of Ni1 xPtx on Si Substrate
Journal Article
·
Thu Dec 31 23:00:00 EST 2009
· Applied Physics Letters
·
OSTI ID:1020068