Morphological Stability and Specific Resistivity of sub-10 nm Silicide Films of Ni1 xPtx on Si Substrate

Journal Article · Fri Jan 01 04:00:00 EST 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3323097· OSTI ID:1020068

Zhang, Z; Zhang, S; Yang, B; Zhu, Y; Rossnagel, S; Gaudet, S; Kellock, A; Jordan-Sweet, J; Lavoie, C

This letter studies the morphological stability and specific resistivity of sub-10 nm silicide films of Ni, Ni{sub 0.95}Pt{sub 0.05}, and Ni{sub 0.9}Pt{sub 0.1} formed on Si(100) substrate. When the deposited metal films are below 1 to 4 nm in thickness depending on the Pt content, the resultant silicide films tend to become epitaxially aligned to the Si substrate and hence exhibit an extraordinary morphological stability up to 800 C. The presence of Pt in the silicides increases the film resistivity through alloy scattering, but alleviates, owing to a reduced electron mean free path, the frequently encountered sharp increase in resistivity in the sub-10 nm regime.

• Research Organization: Brookhaven National Laboratory (BNL) National Synchrotron Light Source
• Sponsoring Organization: DOE - OFFICE OF SCIENCE
• DOE Contract Number: AC02-98CH10886
• OSTI ID: 1020068
• Report Number(s): BNL--95562-2011-JA
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 7 Vol. 96; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALLOYS
ELECTRONS
MEAN FREE PATH
SCATTERING
SILICIDES
STABILITY
SUBSTRATES
THICKNESS
national synchrotron light source