Effects of varying CoCrV seed layer deposition pressure on Ru crystallinity in perpendicular magnetic recording media
- Heraeus Materials Technology, Chandler, Arizona 85226 (United States)
- School of Materials, Arizona State University, Tempe, Arizona 85287 (United States)
The effects of varying deposition parameters of a CoCrV seed layer under Ru on the structural and interfacial properties of both layers were studied. While sputtering power showed little effect on film structure, sputtering pressure during deposition of the seed layer had a significant effect on the structural properties of the seed layer. In particular, the grain morphology and crystallinity of the seed layer varied considerably with deposition pressure. Deposition of Ru using a constant recipe for all samples demonstrated the effect of varying seed layer deposition pressure on the Ru layer. The strain energy of the Ru film, a measurement of contraction due to the registry with the seed layer, was greatest at moderate seed layer sputtering pressures, while the Ru(0002) peak area was greatest at low sputtering pressures. The competing contributions of interfacial energy and strain energy describe this effect, with interfacial energy dominating at low sputtering pressures.
- OSTI ID:
- 21361865
- Journal Information:
- Journal of Applied Physics, Vol. 106, Issue 7; Other Information: DOI: 10.1063/1.3225993; (c) 2009 American Institute of Physics; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
CHROMIUM ALLOYS
COBALT ALLOYS
CRYSTAL STRUCTURE
DEPOSITION
LAYERS
MAGNETISM
MICROSTRUCTURE
MORPHOLOGY
RUTHENIUM
SPUTTERING
SURFACE ENERGY
THIN FILMS
VANADIUM ALLOYS
ALLOYS
ELEMENTS
ENERGY
FILMS
FREE ENERGY
METALS
PHYSICAL PROPERTIES
PLATINUM METALS
REFRACTORY METALS
SURFACE PROPERTIES
THERMODYNAMIC PROPERTIES
TRANSITION ELEMENT ALLOYS
TRANSITION ELEMENTS