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Title: Enhanced heteroepitaxial growth of CoCrPt-SiO{sub 2} perpendicular magnetic recording media on optimized Ru intermediate layers

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.2832649· OSTI ID:21064518
;  [1]
  1. Data Storage Institute, A-STAR, 5 Engineering Drive 1, Singapore 117608 (Singapore)

The crystallographic growth, interfacial roughness, and magnetic properties of CoCrPt-SiO{sub 2} perpendicular magnetic recording media prepared on various types of Ru intermediate growth layers were systematically investigated based on high angle and omega offset x-ray diffraction scans, rocking curve scans, synchrotron radiation based grazing incidence reflectivity scans, and magneto-optical Kerr hysteresis loops. For samples that make use of one Ru growth layer, voltage bias applied on the Ru layer was seen to have two observable effects: (1) the dispersion in the Ru(00{center_dot}2) perpendicular texture increased, but that of the Co(00{center_dot}2) remained unchanged, leading to identical layered growth and (2) the in-plane a-lattice parameter of the Ru decreased leading to enhanced heteroepitaxy with the Co. There was no significant change in the Ru-Co interfacial roughness with changing the bias on the Ru layer. The bias effect can be used to optimize the design of the Ru intermediate layers. A scheme that makes use of two Ru growth layers consisting of a bottom Ru layer prepared under zero bias, which is inserted below a second Ru layer prepared under biased conditions, is shown to lead to significant benefits such as improved texture without affecting the magnetic properties. This is due to the different functional roles ascribed to each of the Ru growth layers.

OSTI ID:
21064518
Journal Information:
Journal of Applied Physics, Vol. 103, Issue 2; Other Information: DOI: 10.1063/1.2832649; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English