Characterization of near-infrared n-type {beta}-FeSi{sub 2}/p-type Si heterojunction photodiodes at room temperature
- Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan)
n-type {beta}-FeSi{sub 2}/p-type Si heterojunctions were fabricated from {beta}-FeSi{sub 2} films epitaxially grown on Si(111) by facing-target direct-current sputtering. Sharp film-substrate interfaces were confirmed by scanning electron microscopy. The current-voltage and photoresponse characteristics were measured at room temperature. They exhibited good rectifying properties and a change of approximately one order of magnitude in the current at a bias voltage of -1 V under illumination by a 6 mW, 1.31 {mu}m laser. The estimated detectivity was 1.5x10{sup 9} cm {radical}Hz W at 1.31 {mu}m. The results suggest that the {beta}-FeSi{sub 2}/Si heterojunctions can be used as near-infrared photodetectors that are compatible with silicon integrated circuits.
- OSTI ID:
- 21294134
- Journal Information:
- Applied Physics Letters, Vol. 94, Issue 22; Other Information: DOI: 10.1063/1.3151915; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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