Comparison of carrier transport mechanism under UV/Vis illumination in an AZO photodetector and an AZO/p-Si heterojunction photodiode produced by spray pyrolysis

Journal Article · Wed Jan 14 04:00:00 EST 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4905416· OSTI ID:22412799

Shasti, M.; Dariani, R. S. ^[1]

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1. Department of Physics, Alzahra University, Tehran 1993893973 (Iran, Islamic Republic of)

In this study, Aluminum doped Zinc Oxide (AZO) layer is deposited on p-type silicon (p-Si) by spray pyrolysis method to fabricate ultraviolet-visible (UV/Vis) photodetector as Al doping process can have positive effect on the photodetector performance. Morphology, crystalline structure, and Al concentration of AZO layer are investigated by SEM, XRD, and EDX. The goal of this study is to analyze the mechanism of carrier transport by means of current-voltage characteristics under UV/Vis illumination in two cases: (a) electrodes connected to the surface of AZO layer and (b) electrodes connected to cross section of heterojunction (AZO/p-Si). Measurements indicate that the AZO/p-Si photodiode exhibits a higher photocurrent and lower photoresponse time under visible illumination with respect to AZO photodetector; while under UV illumination, the above result is inversed. Besides, the internal junction field of AZO/p-Si heterojunction plays an important role on this mechanism.

• OSTI ID: 22412799
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 2 Vol. 117; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM
ALUMINIUM COMPOUNDS
COMPARATIVE EVALUATIONS
CONCENTRATION RATIO
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
HETEROJUNCTIONS
ILLUMINANCE
LAYERS
P-TYPE CONDUCTORS
PHOTODETECTORS
PYROLYSIS
SCANNING ELECTRON MICROSCOPY
SILICON
SURFACES
ULTRAVIOLET RADIATION
X-RAY DIFFRACTION
ZINC OXIDES