Effects of interface states on the transport properties of all-oxide La{sub 0.8}Sr{sub 0.2}CoO{sub 3}/SrTi{sub 0.99}Nb{sub 0.01}O{sub 3} p-n heterojunctions

Journal Article · Mon Feb 25 04:00:00 UTC 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2887905· OSTI ID:21120559

Bruno, F Y; Garcia-Barriocanal, J; Rivera, A; Sefrioui, Z; Leon, C; Santamaria, J ^[1]; Torija, M; Leighton, C ^[2]

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1. GFMC, Departamento Fisica Aplicada III, Universidad Complutense de Madrid, 28040 Madrid (Spain)
2. Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455 (United States)

Electrical transport properties of heteroepitaxial p-n junctions made of La{sub 0.8}Sr{sub 0.2}CoO{sub 3} and SrTi{sub 0.99}Nb{sub 0.01}O{sub 3} were studied. Junctions display highly rectifying current-voltage characteristics over a wide temperature range (20-300 K). Two distinct transport mechanisms are identified: tunneling assisted by interface states at T<130 K and diffusion/recombination at higher temperatures. Capacitance-voltage characteristics are used to determine the junction built-in potential at different frequencies. A capacitance relaxation is found due to charge trapping at interface states. Interface states, which deeply affect transport, are discussed in connection to charge-transfer processes related to the polarity mismatch at the interface.

• OSTI ID: 21120559
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 8 Vol. 92; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CAPACITANCE
CHARGE EXCHANGE
COBALT OXIDES
ELECTRIC POTENTIAL
ELECTRONS
LANTHANUM COMPOUNDS
NIOBIUM OXIDES
P-N JUNCTIONS
RECOMBINATION
RELAXATION
STRONTIUM COMPOUNDS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0013-0065 K
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
TITANIUM COMPOUNDS
TRAPPING
TRAPS
TUNNEL EFFECT