Electrical properties of Si/Si interfaces by using surface-activated bonding
Journal Article
·
· Journal of Applied Physics
- Department of Electrical Engineering, Osaka City University, 3-3-138 Sugimoto, Sumiyoshi-ku, Osaka 558-8585 (Japan)
Electrical properties of n-Si/n-Si, p-Si/n-Si, and p{sup −}-Si/n{sup +}-Si junctions fabricated by using surface-activated-bonding are investigated. The transmission electron microscopy/energy dispersive X-ray spectroscopy of the n-Si/n-Si interfaces reveals no evidence of oxide layers at the interfaces. From the current-voltage (I-V) and the capacitance-voltage (C-V) characteristics of the p-Si/n-Si and p{sup −}-Si/n{sup +}-Si junctions, it is found that the interface states, likely to have formed due to the surface activation process using Ar plasma, have a more marked impact on the electrical properties of the p-Si/n-Si junctions. An analysis of the temperature dependence of the I-V characteristics indicates that the properties of carrier transport across the bonding interfaces for reverse-bias voltages in the p-Si/n-Si and p{sup −}-Si/n{sup +}-Si junctions can be explained using the trap-assisted-tunneling and Frenkel-Poole models, respectively.
- OSTI ID:
- 22217867
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 18 Vol. 114; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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