Use of bias sputtering to enhance decoupling in oxide composite perpendicular recording media

Journal Article · Mon Jun 18 00:00:00 EDT 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2748326· OSTI ID:20971976

Lee, Hwan-Soo; Bain, James A; Laughlin, David E ^[1]

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1. Data Storage Systems Center, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States) and Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States)

The effects of substrate bias on two types of oxide composite perpendicular recording media CoCrPt-SiO{sub 2} and FePt-MgO were investigated. The use of substrate bias greatly modified the thin film microstructure and resulted in the enhanced grain decoupling in the films. The growth characteristics due to preferential resputtering were interpreted to arise mainly from weak surface bonding to the growing films for nontextured growth, combined with strong cohesion for the textured growth.

• OSTI ID: 20971976
• Journal Information: Applied Physics Letters, Vol. 90, Issue 25; Other Information: DOI: 10.1063/1.2748326; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHROMIUM ALLOYS
COBALT ALLOYS
CRYSTAL GROWTH
IRON ALLOYS
MAGNESIUM OXIDES
MICROSTRUCTURE
PLATINUM ALLOYS
SILICON OXIDES
SPUTTERING
SUBSTRATES
SURFACE COATING
THIN FILMS