Nitrogen Plasma Ion Implantation of Al and Ti alloys in the High Voltage Glow Discharge Mode

Journal Article · Mon Nov 13 00:00:00 EST 2006 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.2401502· OSTI ID:20891822

Oliveira, R M; Ueda, M; Rossi, J O ^[1]; Reuther, H ^[2]; Lepienski, C M ^[3]; Beloto, A F ^[4]

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1. Associated Laboratory of Plasma, National Institute for Space Research, Av. dos Astronautas 1758, Sao Jose dos Campos, Sao Paulo (Brazil)
2. Institute of Ion Beam Physics and Materials Research, Rossendorf, Dresden (Germany)
3. Department of Physics, Federal University of Parana, Curitiba, Parana (Brazil)
4. Associated Laboratory of Materials and Sensors, National Institute for Space Research (Brazil)

Enhanced surface properties can be attained for aluminum and its alloys (mechanical and tribological) and Ti6Al4V (mainly tribological) by Plasma Immersion Ion Implantation (PIII) technique. The main problem here, more severe for Al case, is the rapid oxygen contamination even in low O partial pressure. High energy nitrogen ions during PIII are demanded for this situation, in order to enable the ions to pass through the formed oxide layer. We have developed a PIII system that can operate at energies in excess of 50keV, using a Stacked Blumlein (SB) pulser which can nominally provide up to 100 kV pulses. Initially, we are using this system in the High Voltage Glow Discharge (HVGD) mode, to implant nitrogen ions into Al5052 alloy with energies in the range of 30 to 50keV, with 1.5{mu}s duration pulses at a repetition rate of 100Hz. AES, pin-on-disc, nanoindentation measurements are under way but x-ray diffraction results already indicated abundant formation of AlN in the surface for Al5052 treated with this HVGD mode. Our major aim in this PIII experiment is to achieve this difficult to produce stable and highly reliable AlN rich surface layer with high hardness, high corrosion resistance and very low wear rate.

• OSTI ID: 20891822
• Journal Information: AIP Conference Proceedings, Vol. 866, Issue 1; Conference: IIT 2006: 16. international conference on ion implantation technology, Marseille (France), 11-16 Jun 2006; Other Information: DOI: 10.1063/1.2401502; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM
ALUMINIUM ALLOYS
ALUMINIUM NITRIDES
AUGER ELECTRON SPECTROSCOPY
CORROSION RESISTANCE
DEPOSITION
ELECTRIC POTENTIAL
GLOW DISCHARGES
HARDNESS
ION IMPLANTATION
NITROGEN
NITROGEN IONS
OXIDES
OXYGEN
PARTIAL PRESSURE
PLASMA
SURFACE PROPERTIES
TITANIUM
TITANIUM ALLOYS
X-RAY DIFFRACTION