Contactless electromodulation investigations of surface/interface electric fields in semiconductor microstructures

Journal Article · Thu Jul 01 00:00:00 EDT 1993 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.586510· OSTI ID:161754

Pollak, F H ^[1]

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1. Brooklyn College of the City Univ. of New York, NY (United States)

This article reviews some recent experiments using contactless electromodulation techniques, i.e., photoreflectance and contactless electroreflectance, to investigate the surface/interface electric fields in (a) pseudomorphic GaAlAs/InGaAs/GaAs modulation-doped quantum well structures (including the determination of the two-dimensional electron gas density) and (b) Fermi-level pinning on n- and p-type GaAs (001) surfaces. Evidence for the reduced surface state density on p-type material will be presented from both prior and new experiments. 25 refs., 4 figs., 1 tab.

• OSTI ID: 161754
• Report Number(s): CONF-930115-; ISSN 0734-211X; CNN: Contract DAAL-03-92-G-0189; Grant DMR-9120363; TRN: 95:004881-0079
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Vol. 11, Issue 4; Conference: 20. physics and chemistry of semiconductor interfaces, Williamsburg, VA (United States), 25-29 Jan 1993; Other Information: PBD: Jul-Aug 1993
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
PHYSICAL PROPERTIES
ALUMINIUM ARSENIDES
INDIUM ARSENIDES
ELECTRIC FIELDS
ELECTRON GAS
FERMI LEVEL
MODULATION
N-TYPE CONDUCTORS
P-TYPE CONDUCTORS
OPTICAL PROPERTIES
ELECTRONIC STRUCTURE