Electromodulation spectroscopy of highly mismatched alloys

Kudrawiec, Robert; Walukiewicz, Wladek

doi:10.1063/1.5111965

Title: Electromodulation spectroscopy of highly mismatched alloys

Journal Article · Thu Oct 10 00:00:00 EDT 2019 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.5111965· OSTI ID:1757977

Kudrawiec, Robert ^[1]; Walukiewicz, Wladek ^[2]

Wroclaw Univ. of Science and Technology (Poland); PORT Polish Center for Technology Development, Wrocław (Poland). Łukasiewicz Research Network
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

The electronic band structure of highly mismatched alloys (HMAs) was very successfully explored using electromodulation (EM) spectroscopy, i.e., photoreflectance (PR), electroreflectance, and contactless electroreflectance (CER). With these techniques, the optical transitions between the valence band and the E_– and E₊ bands, which are formed in the conduction band of dilute nitrides and dilute oxides, were observed and used to formulate the band anticrossing model, which well describes the electronic band structure of HMAs. In this tutorial, principles of EM spectroscopy are presented and shortly discussed. Special attention is focused on PR and CER techniques, which are nondestructive and have recently been widely applied to study the electronic band structure of HMAs and low dimensional heterostructures containing HMAs. For these methods, experimental setups are described, and theoretical approaches to analyze the experimental data are introduced. Finally, to show the utility of EM spectroscopy, selected examples of the application of this method to study various issues in HMAs are presented and briefly discussed.

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Research Organization:: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; Polish National Science Centre (NCN)

Grant/Contract Number:: AC02-05CH11231; 2013/10/M/ST3/00638

OSTI ID:: 1757977

Journal Information:: Journal of Applied Physics, Vol. 126, Issue 14; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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GaSbBi/GaSb quantum well laser diodes Delorme, O.; Cerutti, L.; Luna, E. Applied Physics Letters, Vol. 110, Issue 22 https://doi.org/10.1063/1.4984799	journal	May 2017
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Interference effects in electromodulation spectroscopy applied to GaAs-based structures: A comparison of photoreflectance and contactless electroreflectance Kudrawiec, R.; Sitarek, P.; Misiewicz, J. Applied Physics Letters, Vol. 86, Issue 9 https://doi.org/10.1063/1.1873052	journal	February 2005
Photoreflectance studies of optical transitions in GaNPAs intermediate band solar cell absorbers Zelazna, K.; Kudrawiec, R.; Luce, A. Solar Energy Materials and Solar Cells, Vol. 188 https://doi.org/10.1016/j.solmat.2018.08.024	journal	December 2018
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Molecular beam epitaxial growth and optical properties of highly mismatched ZnTe _1−x O _x alloys Tanaka, Tooru; Kusaba, Shuhei; Mochinaga, Tomohiro Applied Physics Letters, Vol. 100, Issue 1 https://doi.org/10.1063/1.3674310	journal	January 2012
Photoreflectance, photoluminescence, and microphotoluminescence study of optical transitions between delocalized and localized states in GaN $_{0.02}$ As $_{0.98}$ , Ga $_{0.95}$ In $_{0.05}$ N $_{0.02}$ As $_{0.98}$ , and GaN $_{0.02}$ As $_{0.90}$ Sb $_{0.08}$ layers Kudrawiec, R.; Latkowska, M.; Baranowski, M. Physical Review B, Vol. 88, Issue 12 https://doi.org/10.1103/PhysRevB.88.125201	journal	September 2013
Influence of carrier localization on modulation mechanism in photoreflectance of GaAsN and GaInAsN Kudrawiec, R.; Sȩk, G.; Misiewicz, J. Applied Physics Letters, Vol. 83, Issue 7 https://doi.org/10.1063/1.1602164	journal	August 2003
Photoreflectance evidence of multiple band gaps in dilute GaInNAs layers lattice-matched to GaAs Kudrawiec, R.; Pavelescu, E. -M.; Wagner, J. Journal of Applied Physics, Vol. 96, Issue 5 https://doi.org/10.1063/1.1776312	journal	September 2004
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The energy-fine structure of GaInNAs∕GaAs multiple quantum wells grown at different temperatures and postgrown annealed Kudrawiec, R.; Pavelescu, E. -M.; Andrzejewski, J. Journal of Applied Physics, Vol. 96, Issue 5 https://doi.org/10.1063/1.1774258	journal	September 2004
Synthesis and optical properties of II-O-VI highly mismatched alloys Yu, K. M.; Walukiewicz, W.; Shan, W. Journal of Applied Physics, Vol. 95, Issue 11 https://doi.org/10.1063/1.1713021	journal	June 2004
First-principles calculations of bismuth induced changes in the band structure of dilute Ga–V–Bi and In–V–Bi alloys: chemical trends versus experimental data Polak, M. P.; Scharoch, P.; Kudrawiec, R. Semiconductor Science and Technology, Vol. 30, Issue 9 https://doi.org/10.1088/0268-1242/30/9/094001	journal	June 2015
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Contactless electroreflectance studies of the Fermi level position at the air/GaN interface: Bistable nature of the Ga-polar surface Janicki, Łukasz; Gładysiewicz, Marta; Misiewicz, Jan Applied Surface Science, Vol. 396 https://doi.org/10.1016/j.apsusc.2016.12.013	journal	February 2017
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Temperature dependence of the optical transitions in Ga0.64In0.36N0.046As0.954 multiquantum wells of various widths studied by photoreflectance Kudrawiec, R.; Poloczek, P.; Misiewicz, J. Journal of Applied Physics, Vol. 106, Issue 3 https://doi.org/10.1063/1.3187789	journal	August 2009
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36 MATERIALS SCIENCE
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excitons
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Title: Electromodulation spectroscopy of highly mismatched alloys

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