Sb-induced strain fluctuations in a strained layer superlattice of InAs/InAsSb

Kim, Honggyu; Meng, Yifei; Klem, John F.; Hawkins, Samuel D.; Kim, Jin K.; Zuo, Jian-Min

doi:10.1063/1.4993673

Title: Sb-induced strain fluctuations in a strained layer superlattice of InAs/InAsSb

Journal Article · Sat Apr 28 00:00:00 EDT 2018 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4993673· OSTI ID:1411606

Kim, Honggyu ^[1];

^[1]; Klem, John F. ^[2]; Hawkins, Samuel D. ^[2]; Kim, Jin K. ^[2]; Zuo, Jian-Min ^[1]

Univ. of Illinois, Urbana, IL (United States). Dept. of Materials Science and Engineering, Frederick Seitz Materials Research Lab.
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Here, we show that Sb substitution for As in a MBE grown InAs/InAsSb strained layer superlattice (SLS) is accompanied by significant strain fluctuations. The SLS was observed using scanning transmission electron microscopy along the [100] zone axis where the cation and anion atomic columns are separately resolved. Strain analysis based on atomic column positions reveals asymmetrical transitions in the strain profile across the SLS interfaces. The averaged strain profile is quantitatively fitted to the segregation model, which yields a distribution of Sb in agreement with our scanning tunneling microscopy result. The subtraction of the calculated strain reveals an increase in strain fluctuations with the Sb concentration, as well as isolated regions with large strain deviations extending spatially over ~1 nm, which suggest the presence of point defects.

View Accepted Manuscript (DOE)

Cite

Export

Save

Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Laboratories (SNL-CA), Livermore, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000; NA0003525; W911NF-10-1-0524

OSTI ID:: 1411606

Report Number(s):: SAND2017-6813J; 654869; TRN: US1800245

Journal Information:: Journal of Applied Physics, Vol. 123, Issue 16; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 6 works

Citation information provided by
Web of Science

References (41)

InAs/InAsSb strain balanced superlattices for optical detectors: Material properties and energy band simulations Lackner, D.; Steger, M.; Thewalt, M. L. W. Journal of Applied Physics, Vol. 111, Issue 3 https://doi.org/10.1063/1.3681328	journal	February 2012
Auger lifetime enhancement in InAs–Ga _{1− x} In _x Sb superlattices Youngdale, E. R.; Meyer, J. R.; Hoffman, C. A. Applied Physics Letters, Vol. 64, Issue 23 https://doi.org/10.1063/1.111325	journal	June 1994
Practical and Reproducible Mapping of Strains in Si Devices Using Geometric Phase Analysis of Annular Dark-Field Images From Scanning Transmission Electron Microscopy IEEE Electron Device Letters, Vol. 31, Issue 8 https://doi.org/10.1109/LED.2010.2049562	journal	August 2010
Digital model for X-ray diffraction with application to composition and strain determination in strained InAs/GaSb superlattices Meng, Yifei; Kim, Honggyu; Rouviére, Jean-Luc Journal of Applied Physics, Vol. 116, Issue 1 https://doi.org/10.1063/1.4887078	journal	July 2014
Identification of dominant recombination mechanisms in narrow-bandgap InAs/InAsSb type-II superlattices and InAsSb alloys Olson, B. V.; Shaner, E. A.; Kim, J. K. Applied Physics Letters, Vol. 103, Issue 5 https://doi.org/10.1063/1.4817400	journal	July 2013
Quantitative analysis of strain distribution in InAs/InAs _1−x Sb _x superlattices Mahalingam, Krishnamurthy; Steenbergen, Elizabeth H.; Brown, Gail J. Applied Physics Letters, Vol. 103, Issue 6 https://doi.org/10.1063/1.4817969	journal	August 2013
Charged point defects in semiconductors Seebauer, Edmund G.; Kratzer, Meredith C. Materials Science and Engineering: R: Reports, Vol. 55, Issue 3-6 https://doi.org/10.1016/j.mser.2006.01.002	journal	December 2006
Growth of type II strained layer superlattice, bulk InAs and GaSb materials for minority lifetime characterization Svensson, S. P.; Donetsky, D.; Wang, D. Journal of Crystal Growth, Vol. 334, Issue 1 https://doi.org/10.1016/j.jcrysgro.2011.08.030	journal	November 2011
Strain balanced InAs/InAsSb superlattice structures with optical emission to 10 μm Lackner, D.; Pitts, O. J.; Steger, M. Applied Physics Letters, Vol. 95, Issue 8 https://doi.org/10.1063/1.3216041	journal	August 2009
Understanding ion-milling damage in Hg1−xCdxTe epilayers Wang, Changzhen; Smith, David J.; Tobin, Steve Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 24, Issue 4 https://doi.org/10.1116/1.2207148	journal	July 2006
Direct minority carrier lifetime measurements and recombination mechanisms in long-wave infrared type II superlattices using time-resolved photoluminescence Connelly, Blair C.; Metcalfe, Grace D.; Shen, Hongen Applied Physics Letters, Vol. 97, Issue 25 https://doi.org/10.1063/1.3529458	journal	December 2010
Thin Film Materials Freund, L. B.; Suresh, S. https://doi.org/10.1017/CBO9780511754715	book	July 2010
The effects of elastic relaxation on transmission electron microscopy studies of thinned composition-modulated materials Treacy, M. M. J. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 4, Issue 6 https://doi.org/10.1116/1.583473	journal	November 1986
High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection Hoang, A. M.; Chen, G.; Chevallier, R. Applied Physics Letters, Vol. 104, Issue 25 https://doi.org/10.1063/1.4884947	journal	June 2014
Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices Kim, H. S.; Cellek, O. O.; Lin, Zhi-Yuan Applied Physics Letters, Vol. 101, Issue 16 https://doi.org/10.1063/1.4760260	journal	October 2012
Influence of carrier localization on minority carrier lifetime in InAs/InAsSb type-II superlattices Lin, Zhi-Yuan; Liu, Shi; Steenbergen, Elizabeth H. Applied Physics Letters, Vol. 107, Issue 20 https://doi.org/10.1063/1.4936109	journal	November 2015
Minority carrier lifetime in type-2 InAs–GaSb strained-layer superlattices and bulk HgCdTe materials Donetsky, Dmitry; Belenky, Gregory; Svensson, Stefan Applied Physics Letters, Vol. 97, Issue 5 https://doi.org/10.1063/1.3476352	journal	August 2010
Monolayer-by-monolayer compositional analysis of InAs/InAsSb superlattices with cross-sectional STM Wood, M. R.; Kanedy, K.; Lopez, F. Journal of Crystal Growth, Vol. 425 https://doi.org/10.1016/j.jcrysgro.2015.02.063	journal	September 2015
Study of InAs/InAsSb type-II superlattices using high-resolution x-ray diffraction and cross-sectional electron microscopy Shen, Xiao-Meng; Li, Hua; Liu, Shi Journal of Crystal Growth, Vol. 381 https://doi.org/10.1016/j.jcrysgro.2013.06.021	journal	October 2013
Study of interface asymmetry in InAs–GaSb heterojunctions Wang, M. W. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 13, Issue 4 https://doi.org/10.1116/1.587879	journal	July 1995
A designing principle for low dark-current strained layer superlattices Krishnamurthy, S.; Yu, Zhi-Gang Applied Physics Letters, Vol. 110, Issue 2 https://doi.org/10.1063/1.4974031	journal	January 2017
Atom-selective imaging of the GaAs(110) surface Feenstra, R. M.; Stroscio, Joseph A.; Tersoff, J. Physical Review Letters, Vol. 58, Issue 12 https://doi.org/10.1103/PhysRevLett.58.1192	journal	March 1987
Evaluation of antimony segregation in InAs/InAs _1−x Sb _x type-II superlattices grown by molecular beam epitaxy Lu, Jing; Luna, Esperanza; Aoki, Toshihiro Journal of Applied Physics, Vol. 119, Issue 9 https://doi.org/10.1063/1.4942844	journal	March 2016
Effects of layer thickness and alloy composition on carrier lifetimes in mid-wave infrared InAs/InAsSb superlattices Aytac, Y.; Olson, B. V.; Kim, J. K. Applied Physics Letters, Vol. 105, Issue 2 https://doi.org/10.1063/1.4890578	journal	July 2014
Measurement of InAsSb bandgap energy and InAs/InAsSb band edge positions using spectroscopic ellipsometry and photoluminescence spectroscopy Webster, P. T.; Riordan, N. A.; Liu, S. Journal of Applied Physics, Vol. 118, Issue 24 https://doi.org/10.1063/1.4939293	journal	December 2015
Peak separation method for sub-lattice strain analysis at atomic resolution: Application to InAs/GaSb superlattice Kim, Honggyu; Meng, Yifei; Rouviére, Jean-Luc Micron, Vol. 92 https://doi.org/10.1016/j.micron.2016.10.003	journal	January 2017
Origin of Antimony Segregation in $GaInSb / InAs$ Strained-Layer Superlattices Steinshnider, J.; Harper, J.; Weimer, M. Physical Review Letters, Vol. 85, Issue 21 https://doi.org/10.1103/PhysRevLett.85.4562	journal	November 2000
Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structures Donetsky, Dmitry; Svensson, Stefan P.; Vorobjev, Leonid E. Applied Physics Letters, Vol. 95, Issue 21 https://doi.org/10.1063/1.3267103	journal	November 2009
Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb Steenbergen, E. H.; Connelly, B. C.; Metcalfe, G. D. Applied Physics Letters, Vol. 99, Issue 25 https://doi.org/10.1063/1.3671398	journal	December 2011
Depth sectioning with the aberration-corrected scanning transmission electron microscope Borisevich, A. Y.; Lupini, A. R.; Pennycook, S. J. Proceedings of the National Academy of Sciences, Vol. 103, Issue 9 https://doi.org/10.1073/pnas.0507105103	journal	February 2006
An ab initio study of the cleavage anisotropy in silicon Pérez, R.; Gumbsch, P. Acta Materialia, Vol. 48, Issue 18-19 https://doi.org/10.1016/S1359-6454(00)00238-X	journal	December 2000
Band parameters for III–V compound semiconductors and their alloys Vurgaftman, I.; Meyer, J. R.; Ram-Mohan, L. R. Journal of Applied Physics, Vol. 89, Issue 11, p. 5815-5875 https://doi.org/10.1063/1.1368156	journal	June 2001
Effects of interfacial atomic segregation and intermixing on the electronic properties of InAs/GaSb superlattices Magri, Rita; Zunger, Alex Physical Review B, Vol. 65, Issue 16 https://doi.org/10.1103/PhysRevB.65.165302	journal	March 2002
Proposal for strained type II superlattice infrared detectors Smith, D. L.; Mailhiot, C. Journal of Applied Physics, Vol. 62, Issue 6 https://doi.org/10.1063/1.339468	journal	September 1987
Electronic versus geometric contrast in cross-sectional STM images of III-V semiconductor heterostructures Kim, S. G.; Erwin, S. C.; Nosho, B. Z. Physical Review B, Vol. 67, Issue 12 https://doi.org/10.1103/PhysRevB.67.121306	journal	March 2003
Quantitative measurement of displacement and strain fields from HREM micrographs Hÿtch, M. J.; Snoeck, E.; Kilaas, R. Ultramicroscopy, Vol. 74, Issue 3, p. 131-146 https://doi.org/10.1016/S0304-3991(98)00035-7	journal	August 1998
Exploring optimum growth for high quality InAs/GaSb type-II superlattices Haugan, H. J.; Grazulis, L.; Brown, G. J. Journal of Crystal Growth, Vol. 261, Issue 4 https://doi.org/10.1016/j.jcrysgro.2003.09.045	journal	February 2004
Artefacts in geometric phase analysis of compound materials Peters, Jonathan J. P.; Beanland, Richard; Alexe, Marin Ultramicroscopy, Vol. 157 https://doi.org/10.1016/j.ultramic.2015.05.020	journal	October 2015
Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells Muraki, K.; Fukatsu, S.; Shiraki, Y. Applied Physics Letters, Vol. 61, Issue 5 https://doi.org/10.1063/1.107835	journal	August 1992
Lattice and strain analysis of atomic resolution Z-contrast images based on template matching Zuo, Jian-Min; Shah, Amish B.; Kim, Honggyu Ultramicroscopy, Vol. 136 https://doi.org/10.1016/j.ultramic.2013.07.018	journal	January 2014
Conduction- and Valence-Band Energies in Bulk InAs1−x Sb x and Type II InAs1−x Sb x /InAs Strained-Layer Superlattices Lin, Youxi; Wang, Ding; Donetsky, Dmitry Journal of Electronic Materials, Vol. 42, Issue 5 https://doi.org/10.1007/s11664-013-2528-9	journal	March 2013

Cited By (1)

Modeling Energy Bands in Type II Superlattices Becer, Zoubir; Bennecer, Abdeldjalil; Sengouga, Noureddine Crystals, Vol. 9, Issue 12 https://doi.org/10.3390/cryst9120629	journal	November 2019

Similar Records

Raman Scattering Study of Lattice Vibrations in the Type-II Superlattice

InAs / {InAs}_{1 - x} {Sb}_{x}

Journal Article · Tue Sep 26 00:00:00 EDT 2017 · Physical Review Applied · OSTI ID:1411606

Liu, Henan; Zhang, Yong; Steenbergen, Elizabeth H.; +10 more

Monolayer-by-monolayer compositional analysis of InAs/InAsSb superlattices with cross-sectional STM

Journal Article · Mon Feb 23 00:00:00 EST 2015 · Journal of Crystal Growth · OSTI ID:1411606

Wood, M. R.; Kanedy, K.; Lopez, F.; +5 more

InAsSb/InPSb Strained-Layer Superlattice Growth Using Metal-Organic Chemical Vapor Deposition

Conference · Mon Aug 09 00:00:00 EDT 1999 · OSTI ID:1411606

Biefeld, R M; Kurtz, S R; Phillips, J D

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY

Title: Sb-induced strain fluctuations in a strained layer superlattice of InAs/InAsSb

Citation Formats

References (41)

Cited By (1)

Similar Records

Related Subjects