Monolayer-by-monolayer compositional analysis of InAs/InAsSb superlattices with cross-sectional STM

Wood, M. R.; Kanedy, K.; Lopez, F.; Weimer, M.; Klem, J. F.; Hawkins, S. D.; Shaner, E. A.; Kim, J. K.

doi:10.1016/j.jcrysgro.2015.02.063

Monolayer-by-monolayer compositional analysis of InAs/InAsSb superlattices with cross-sectional STM

Journal Article · Mon Feb 23 00:00:00 EST 2015 · Journal of Crystal Growth

DOI:https://doi.org/10.1016/j.jcrysgro.2015.02.063· OSTI ID:1340250

Wood, M. R. ^[1]; Kanedy, K. ^[1]; Lopez, F. ^[1]; Weimer, M. ^[1]; Klem, J. F. ^[2]; Hawkins, S. D. ^[2]; Shaner, E. A. ^[2]; Kim, J. K. ^[2]

Texas A & M Univ., College Station, TX (United States). Dept. of Physics and Astronomy
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

In this paper, we use cross-sectional scanning tunneling microscopy (STM) to reconstruct the monolayer-by-monolayer composition profile across a representative subset of MBE-grown InAs/InAsSb superlattice layers and find that antimony segregation frustrates the intended compositional discontinuities across both antimonide-on-arsenide and arsenide-on-antimonide heterojunctions. Graded, rather than abrupt, interfaces are formed in either case. We likewise find that the incorporated antimony per superlattice period varies measurably from beginning to end of the multilayer stack. Finally, although the intended antimony discontinuities predict significant discrepancies with respect to the experimentally observed high-resolution x-ray diffraction spectrum, dynamical simulations based on the STM-derived profiles provide an excellent quantitative match to all important aspects of the x-ray data.

Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Texas A & M Univ., College Station, TX (United States)

Sponsoring Organization:: Army Research Office (ARO) (United States). Short Term Innovative Research (STIR) Program; USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1340250

Report Number(s):: SAND2014--19677J; PII: S0022024815001530

Journal Information:: Journal of Crystal Growth, Journal Name: Journal of Crystal Growth Vol. 425; ISSN 0022-0248

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

References (9)

Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells Muraki, K.; Fukatsu, S.; Shiraki, Y. Applied Physics Letters, Vol. 61, Issue 5 https://doi.org/10.1063/1.107835	journal	August 1992
Continuous wave operation of InAs/InAs _x Sb _{1− x} midinfrared lasers Zhang, Yong‐Hang Applied Physics Letters, Vol. 66, Issue 2 https://doi.org/10.1063/1.113535	journal	January 1995
Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structures Donetsky, Dmitry; Svensson, Stefan P.; Vorobjev, Leonid E. Applied Physics Letters, Vol. 95, Issue 21 https://doi.org/10.1063/1.3267103	journal	November 2009
Proposal for strained type II superlattice infrared detectors Smith, D. L.; Mailhiot, C. Journal of Applied Physics, Vol. 62, Issue 6 https://doi.org/10.1063/1.339468	journal	September 1987
Direct minority carrier lifetime measurements and recombination mechanisms in long-wave infrared type II superlattices using time-resolved photoluminescence Connelly, Blair C.; Metcalfe, Grace D.; Shen, Hongen Applied Physics Letters, Vol. 97, Issue 25 https://doi.org/10.1063/1.3529458	journal	December 2010
Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb Steenbergen, E. H.; Connelly, B. C.; Metcalfe, G. D. Applied Physics Letters, Vol. 99, Issue 25 https://doi.org/10.1063/1.3671398	journal	December 2011
Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice Olson, B. V.; Shaner, E. A.; Kim, J. K. Applied Physics Letters, Vol. 101, Issue 9 https://doi.org/10.1063/1.4749842	journal	August 2012
Quantitative analysis of strain distribution in InAs/InAs _1−x Sb _x superlattices Mahalingam, Krishnamurthy; Steenbergen, Elizabeth H.; Brown, Gail J. Applied Physics Letters, Vol. 103, Issue 6 https://doi.org/10.1063/1.4817969	journal	August 2013
Origin of Antimony Segregation in GaInSb / InAs Strained-Layer Superlattices Steinshnider, J.; Harper, J.; Weimer, M. Physical Review Letters, Vol. 85, Issue 21 https://doi.org/10.1103/PhysRevLett.85.4562	journal	November 2000

Cited By (2)

Visualizing period fluctuations in strained-layer superlattices with scanning tunneling microscopy Kanedy, K.; Lopez, F.; Wood, M. R. Applied Physics Letters, Vol. 112, Issue 4 https://doi.org/10.1063/1.5008865	journal	January 2018
Ultra-short period Ga-free superlattice growth on GaSb Sarney, W. L.; Svensson, S. P.; Yakes, M. K. Journal of Applied Physics, Vol. 124, Issue 3 https://doi.org/10.1063/1.5029328	journal	July 2018

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36 MATERIALS SCIENCE
High resolution x-ray diffraction
Molecular beam epitaxy
Scanning tunneling microscopy
Segregation
Semiconducting III–V materials
Superlattices

Monolayer-by-monolayer compositional analysis of InAs/InAsSb superlattices with cross-sectional STM

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