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Superlattice photodetector having improved carrier mobility

Patent ·
OSTI ID:1532075
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In a superlattice (SL) photodetector, each period of the SL includes first and second semiconductor layers having different compositions, at least one of which comprises indium arsenide (InAs). At least one of these two semiconductor layers has a graded composition. In embodiments, the first semiconductor layer comprises InAs and the second semiconductor layer is a graded layer comprising indium arsenide antimonide (InAsSb), wherein the antimony (Sb) concentration is varied. In examples, the Sb concentration in the second layer gradually increases from the top and bottom toward the middle of the layer.
Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
Assignee:
National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
Patent Number(s):
9,929,293
Application Number:
15/479,134
OSTI ID:
1532075
Country of Publication:
United States
Language:
English

References (7)

Structural and optical characterization of type-II InAs/InAs 1−x Sb x superlattices grown by metalorganic chemical vapor deposition journal August 2011
Intensity- and Temperature-Dependent Carrier Recombination in InAs / In As 1 − x S b x Type-II Superlattices journal April 2015
Progress in Infrared Photodetectors Since 2000 journal April 2013
Identification of dominant recombination mechanisms in narrow-bandgap InAs/InAsSb type-II superlattices and InAsSb alloys journal July 2013
Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb journal December 2011
Auger recombination in long-wave infrared InAs/InAsSb type-II superlattices journal December 2015
Minority carrier lifetime and dark current measurements in mid-wavelength infrared InAs 0.91 Sb 0.09 alloy nBn photodetectors journal November 2015

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