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Title: Raman Scattering Study of Lattice Vibrations in the Type-II Superlattice InAs / InAs 1 - x Sb x

Abstract

The InAs/InAs 1-x Sb x superlattice system distinctly differs from two well-studied superlattice systems GaAs/AlAs and InAs/GaSb in terms of electronic band alignment, common elements at the interface, and phonon spectrum overlapping of the constituents. This fact leads to the unique electronic and vibrational properties of the InAs/InAs 1-xSb x system when compared to the other two systems. Here in this work, we report a polarized Raman study of the vibrational properties of the InAs/InAs 1-x Sb x superlattices (SLs) as well as selected InAs 1-xSb x alloys, all grown on GaSb substrates by either MBE or metalorganic chemical vapor deposition (MOCVD) from both the growth surface and cleaved edge. In the SL, from the (001) backscattering geometry, an InAs-like longitudinal optical (LO) mode is observed as the primary feature, and its intensity is found to increase with increasing Sb composition. From the (110) cleaved-edge backscattering geometry, an InAs-like transverse optical (TO) mode is observed as the main feature in two cross-polarization configurations, but an additional InAs-like “forbidden” LO mode is observed in two parallel-polarization configurations. The InAs 1-xSb x alloys lattice matched to the substrate ( x Sb ~ 0.09) grown by MBE are also found to exhibit themore » forbidden LO mode, implying the existence of some unexpected [001] modulation. However, the strained samples (x Sb~ 0.35) grown by MOCVD are found to behave like a disordered alloy. The primary conclusions are (1) the InAs-like LO or TO mode can be either a confined or quasiconfined mode in the InAs layers of the SL or extended mode of the whole structure depending on the Sb composition. (2) InAs/InAs 1-xSb x and InAs/GaSb SLs exhibit significantly different behaviors in the cleaved-edge geometry but qualitatively similar in the (001) geometry. (3) The appearance of the forbidden LO-like mode is a universal signature for SLs and bulk systems resulting from the mixing of phonon modes due to structural modulation or symmetry reduction.« less

Authors:
 [1];  [1];  [2];  [2];  [2];  [2];  [3];  [3];  [3];  [3];  [4];  [4];  [4]
  1. Univ. of North Carolina, Charlotte, NC (United States). Optical Science and Engineering Graduate Program and Dept. of Electrical and Computer Engineering
  2. Arizona State Univ., Tempe, AZ (United States). Center for Photonics Innovation and School of Electrical, Computer and Energy Engineering
  3. Georgia Inst. of Technology, Atlanta, GA (United States). Center for Compound Semiconductors and School of Electrical and Computer Engineering
  4. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA); US Army Research Office (ARO)
OSTI Identifier:
1467461
Alternate Identifier(s):
OSTI ID: 1394874
Report Number(s):
SAND-2017-10149J
Journal ID: ISSN 2331-7019; PRAHB2; 657091
Grant/Contract Number:  
AC04-94AL85000; W911NF-10-1-0524; NA0003525
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Physical Review Applied
Additional Journal Information:
Journal Volume: 8; Journal Issue: 3; Journal ID: ISSN 2331-7019
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Liu, Henan, Zhang, Yong, Steenbergen, Elizabeth H., Liu, Shi, Lin, Zhiyuan, Zhang, Yong-Hang, Kim, Jeomoh, Ji, Mi-Hee, Detchprohm, Theeradetch, Dupuis, Russell D., Kim, Jin K., Hawkins, Samuel D., and Klem, John F. Raman Scattering Study of Lattice Vibrations in the Type-II Superlattice InAs/InAs1-xSbx. United States: N. p., 2017. Web. doi:10.1103/PhysRevApplied.8.034028.
Liu, Henan, Zhang, Yong, Steenbergen, Elizabeth H., Liu, Shi, Lin, Zhiyuan, Zhang, Yong-Hang, Kim, Jeomoh, Ji, Mi-Hee, Detchprohm, Theeradetch, Dupuis, Russell D., Kim, Jin K., Hawkins, Samuel D., & Klem, John F. Raman Scattering Study of Lattice Vibrations in the Type-II Superlattice InAs/InAs1-xSbx. United States. doi:10.1103/PhysRevApplied.8.034028.
Liu, Henan, Zhang, Yong, Steenbergen, Elizabeth H., Liu, Shi, Lin, Zhiyuan, Zhang, Yong-Hang, Kim, Jeomoh, Ji, Mi-Hee, Detchprohm, Theeradetch, Dupuis, Russell D., Kim, Jin K., Hawkins, Samuel D., and Klem, John F. Tue . "Raman Scattering Study of Lattice Vibrations in the Type-II Superlattice InAs/InAs1-xSbx". United States. doi:10.1103/PhysRevApplied.8.034028. https://www.osti.gov/servlets/purl/1467461.
@article{osti_1467461,
title = {Raman Scattering Study of Lattice Vibrations in the Type-II Superlattice InAs/InAs1-xSbx},
author = {Liu, Henan and Zhang, Yong and Steenbergen, Elizabeth H. and Liu, Shi and Lin, Zhiyuan and Zhang, Yong-Hang and Kim, Jeomoh and Ji, Mi-Hee and Detchprohm, Theeradetch and Dupuis, Russell D. and Kim, Jin K. and Hawkins, Samuel D. and Klem, John F.},
abstractNote = {The InAs/InAs1-x Sbx superlattice system distinctly differs from two well-studied superlattice systems GaAs/AlAs and InAs/GaSb in terms of electronic band alignment, common elements at the interface, and phonon spectrum overlapping of the constituents. This fact leads to the unique electronic and vibrational properties of the InAs/InAs1-xSbx system when compared to the other two systems. Here in this work, we report a polarized Raman study of the vibrational properties of the InAs/InAs1-x Sbx superlattices (SLs) as well as selected InAs1-xSbx alloys, all grown on GaSb substrates by either MBE or metalorganic chemical vapor deposition (MOCVD) from both the growth surface and cleaved edge. In the SL, from the (001) backscattering geometry, an InAs-like longitudinal optical (LO) mode is observed as the primary feature, and its intensity is found to increase with increasing Sb composition. From the (110) cleaved-edge backscattering geometry, an InAs-like transverse optical (TO) mode is observed as the main feature in two cross-polarization configurations, but an additional InAs-like “forbidden” LO mode is observed in two parallel-polarization configurations. The InAs1-xSbx alloys lattice matched to the substrate ( xSb ~ 0.09) grown by MBE are also found to exhibit the forbidden LO mode, implying the existence of some unexpected [001] modulation. However, the strained samples (xSb~ 0.35) grown by MOCVD are found to behave like a disordered alloy. The primary conclusions are (1) the InAs-like LO or TO mode can be either a confined or quasiconfined mode in the InAs layers of the SL or extended mode of the whole structure depending on the Sb composition. (2) InAs/InAs1-xSbx and InAs/GaSb SLs exhibit significantly different behaviors in the cleaved-edge geometry but qualitatively similar in the (001) geometry. (3) The appearance of the forbidden LO-like mode is a universal signature for SLs and bulk systems resulting from the mixing of phonon modes due to structural modulation or symmetry reduction.},
doi = {10.1103/PhysRevApplied.8.034028},
journal = {Physical Review Applied},
issn = {2331-7019},
number = 3,
volume = 8,
place = {United States},
year = {2017},
month = {9}
}

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