Comparison of gain degradation and deep level transient spectroscopy in pnp Si bipolar junction transistors irradiated with different ion species

Journal Article · Fri Dec 09 00:00:00 EST 2016 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/TNS.2016.2636809· OSTI ID:1356233

Aguirre, B. A. ^[1]; Bielejec, E. ^[1]; Fleming, R. M. ^[1]; Vizkelethy, G. ^[1]; Vaandrager, B. ^[1]; Campbell, J. ^[1]; Martin, W. J. ^[1]; King, D. B. ^[1]

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1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Here, we studied the effect of light ion and heavy ion irradiations on pnp Si BJTs. A mismatch in DLTS deep peak amplitude for devices with same final gain but irradiated with different ion species was observed. Also, different ions cause different gain degradation when the DLTS spectra are matched. Pre-dosed ion-irradiated samples show that ion induced ionization does not account for the differences in DLTS peak height but isochronal annealing studies suggest that light ions produce more VP defects than heavy ions to compensate for the lack of clusters that heavy ions produce. The creation of defect clusters by heavy ions is evident by the higher content of E4 and V*₂ defects compared to light ions.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA)
• Grant/Contract Number: AC04-94AL85000
• OSTI ID: 1356233
• Report Number(s): SAND-2016-6546C; 644856; TRN: US1702155
• Journal Information: IEEE Transactions on Nuclear Science, Vol. 64, Issue 1; ISSN 0018-9499
• Publisher: Institute of Electrical and Electronics Engineers (IEEE)
• Country of Publication: United States
• Language: English

Related Subjects

73 NUCLEAR PHYSICS AND RADIATION PHYSICS
Si BJT
deep level transient spectroscopy (DLTS)
displacement damage
gain degradation
ion irradiation
ion beam