Direct Visualization of Charge Migration in Bilayer Tantalum Oxide Films by Multimodal Imaging
Abstract
Inspired by biological neuromorphic computing, artificial neural networks based on crossbar arrays of bilayer tantalum oxide memristors have shown to be promising alternatives to conventional complementary metal-oxide-semiconductor (CMOS) architectures. In order to understand the driving mechanism in these oxide systems, tantalum oxide films are resistively switched by conductive atomic force microscopy (C-AFM), and subsequently imaged by kelvin probe force microscopy (KPFM) and spatially resolved time-of-flight secondary ion mass spectrometry (ToF-SIMS). These workflows enable induction and analysis of the resistive switching mechanism as well as control over the resistively switched region of the film. In this work it is shown that the resistive switching mechanism is driven by both current and electric field effects. Reversible oxygen motion is enabled by applying low (<1 V) electric fields, while high electric fields generate irreversible breakdown of the material (>1 V). Fully understanding oxygen motion and electrical effects in bilayer oxide memristor systems is a fundamental step toward the adoption of memristors as a neuromorphic computing technology.
- Authors:
-
[1];
[1];
[1]
- University of Tennessee, Knoxville, TN (United States)
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sandia National Laboratories (SNL-CA), Livermore, CA (United States)
- Arizona State University, Tempe, AZ (United States)
- Publication Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF); USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 2281139
- Alternate Identifier(s):
- OSTI ID: 2311253
- Report Number(s):
- SAND-2023-14614J
Journal ID: ISSN 2199-160X
- Grant/Contract Number:
- AC05-00OR22725; NA0003525
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Advanced Electronic Materials
- Additional Journal Information:
- Journal Volume: 10; Journal Issue: 1; Journal ID: ISSN 2199-160X
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; memristor; tantalum oxide; ReRAM
Citation Formats
Flynn‐Hepford, Matthew, Lasseter, John, Kravchenko, Ivan, Randolph, Steven, Keum, Jong, Sumpter, Bobby G., Jesse, Stephen, Maksymovych, Petro, Talin, A. Alec, Marinella, Matthew J., Rack, Philip D., Ievlev, Anton V., and Ovchinnikova, Olga S. Direct Visualization of Charge Migration in Bilayer Tantalum Oxide Films by Multimodal Imaging. United States: N. p., 2023.
Web. doi:10.1002/aelm.202300589.
Flynn‐Hepford, Matthew, Lasseter, John, Kravchenko, Ivan, Randolph, Steven, Keum, Jong, Sumpter, Bobby G., Jesse, Stephen, Maksymovych, Petro, Talin, A. Alec, Marinella, Matthew J., Rack, Philip D., Ievlev, Anton V., & Ovchinnikova, Olga S. Direct Visualization of Charge Migration in Bilayer Tantalum Oxide Films by Multimodal Imaging. United States. https://doi.org/10.1002/aelm.202300589
Flynn‐Hepford, Matthew, Lasseter, John, Kravchenko, Ivan, Randolph, Steven, Keum, Jong, Sumpter, Bobby G., Jesse, Stephen, Maksymovych, Petro, Talin, A. Alec, Marinella, Matthew J., Rack, Philip D., Ievlev, Anton V., and Ovchinnikova, Olga S. Mon .
"Direct Visualization of Charge Migration in Bilayer Tantalum Oxide Films by Multimodal Imaging". United States. https://doi.org/10.1002/aelm.202300589. https://www.osti.gov/servlets/purl/2281139.
@article{osti_2281139,
title = {Direct Visualization of Charge Migration in Bilayer Tantalum Oxide Films by Multimodal Imaging},
author = {Flynn‐Hepford, Matthew and Lasseter, John and Kravchenko, Ivan and Randolph, Steven and Keum, Jong and Sumpter, Bobby G. and Jesse, Stephen and Maksymovych, Petro and Talin, A. Alec and Marinella, Matthew J. and Rack, Philip D. and Ievlev, Anton V. and Ovchinnikova, Olga S.},
abstractNote = {Inspired by biological neuromorphic computing, artificial neural networks based on crossbar arrays of bilayer tantalum oxide memristors have shown to be promising alternatives to conventional complementary metal-oxide-semiconductor (CMOS) architectures. In order to understand the driving mechanism in these oxide systems, tantalum oxide films are resistively switched by conductive atomic force microscopy (C-AFM), and subsequently imaged by kelvin probe force microscopy (KPFM) and spatially resolved time-of-flight secondary ion mass spectrometry (ToF-SIMS). These workflows enable induction and analysis of the resistive switching mechanism as well as control over the resistively switched region of the film. In this work it is shown that the resistive switching mechanism is driven by both current and electric field effects. Reversible oxygen motion is enabled by applying low (<1 V) electric fields, while high electric fields generate irreversible breakdown of the material (>1 V). Fully understanding oxygen motion and electrical effects in bilayer oxide memristor systems is a fundamental step toward the adoption of memristors as a neuromorphic computing technology.},
doi = {10.1002/aelm.202300589},
journal = {Advanced Electronic Materials},
number = 1,
volume = 10,
place = {United States},
year = {Mon Nov 13 00:00:00 EST 2023},
month = {Mon Nov 13 00:00:00 EST 2023}
}
Free Publicly Available Full Text
Publisher's Version of Record
Other availability
Search WorldCat to find libraries that may hold this journal
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Engineering incremental resistive switching in TaOxbased memristors for brain-inspired computing
journal, January 2016
- Wang, Zongwei; Yin, Minghui; Zhang, Teng
- Nanoscale, Vol. 8, Issue 29
Role of atomistic structure in the stochastic nature of conductivity in substoichiometric tantalum pentoxide
journal, March 2016
- Bondi, Robert J.; Fox, Brian P.; Marinella, Matthew J.
- Journal of Applied Physics, Vol. 119, Issue 12
How to stop data centres from gobbling up the world’s electricity
journal, September 2018
- Jones, Nicola
- Nature, Vol. 561, Issue 7722
Probing memristive switching in nanoionic devices
journal, May 2018
- Yang, Yuchao; Huang, Ru
- Nature Electronics, Vol. 1, Issue 5
Distance from Line to Point
journal, September 1965
- Moore, Douglas H.
- Mathematics Magazine, Vol. 38, Issue 4
Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
journal, July 1996
- Kresse, G.; Furthmüller, J.
- Computational Materials Science, Vol. 6, Issue 1, p. 15-50
Tuning Resistive Switching Characteristics of Tantalum Oxide Memristors through Si Doping
journal, September 2014
- Kim, Sungho; Choi, ShinHyun; Lee, Jihang
- ACS Nano, Vol. 8, Issue 10
A nanoscale analysis method to reveal oxygen exchange between environment, oxide, and electrodes in ReRAM devices
journal, November 2021
- Cox, Horatio R. J.; Buckwell, Mark; Ng, Wing H.
- APL Materials, Vol. 9, Issue 11
Reliable Multivalued Conductance States in TaO x Memristors through Oxygen Plasma-Assisted Electrode Deposition with in Situ-Biased Conductance State Transmission Electron Microscopy Analysis
journal, July 2018
- Lee, Myoung-Jae; Park, Gyeong-Su; Seo, David H.
- ACS Applied Materials & Interfaces, Vol. 10, Issue 35
Reactive sputtering of substoichiometric Ta2Ox for resistive memory applications
journal, March 2014
- Stevens, James E.; Lohn, Andrew J.; Decker, Seth A.
- Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 32, Issue 2, Article No. 021501
Electrical conductivity in oxygen-deficient phases of tantalum pentoxide from first-principles calculations
journal, November 2013
- Bondi, Robert J.; Desjarlais, Michael P.; Thompson, Aidan P.
- Journal of Applied Physics, Vol. 114, Issue 20
Conductive Atomic Force Microscopy Investigation of Switching Thresholds in Titanium Dioxide Thin Films
journal, May 2015
- Trapatseli, M.; Carta, D.; Regoutz, A.
- The Journal of Physical Chemistry C, Vol. 119, Issue 21
Thousands of conductance levels in memristors integrated on CMOS
journal, March 2023
- Rao, Mingyi; Tang, Hao; Wu, Jiangbin
- Nature, Vol. 615, Issue 7954
Nanoscale Electrochemical Phenomena of Polarization Switching in Ferroelectrics
journal, October 2018
- Ievlev, Anton V.; Brown, Chance C.; Agar, Joshua C.
- ACS Applied Materials & Interfaces, Vol. 10, Issue 44
Integrating memristors and CMOS for better AI
journal, September 2019
- Jiang, Weiwen; Xie, Bike; Liu, Chun-Chen
- Nature Electronics, Vol. 2, Issue 9
Assessment of the Perdew–Burke–Ernzerhof exchange-correlation functional
journal, March 1999
- Ernzerhof, Matthias; Scuseria, Gustavo E.
- The Journal of Chemical Physics, Vol. 110, Issue 11
Hysteretic Ion Migration and Remanent Field in Metal Halide Perovskites
journal, August 2020
- Liu, Yongtao; Borodinov, Nikolay; Lorenz, Matthias
- Advanced Science, Vol. 7, Issue 19
Switching Mode and Mechanism in Binary Oxide Resistive Random Access Memory Using Ni Electrode
journal, February 2013
- Lin, Kuan-Liang; Hou, Tuo-Hung; Lee, Yao-Jen
- Japanese Journal of Applied Physics, Vol. 52, Issue 3R
The chips are down for Moore’s law
journal, February 2016
- Waldrop, M. Mitchell
- Nature, Vol. 530, Issue 7589
Oxygen Exchange Processes between Oxide Memristive Devices and Water Molecules
journal, June 2018
- Heisig, Thomas; Baeumer, Christoph; Gries, Ute N.
- Advanced Materials, Vol. 30, Issue 29
Role of Decomposition Product Ions in Hysteretic Behavior of Metal Halide Perovskite
journal, May 2021
- Liu, Yongtao; Borodinov, Nikolay; Collins, Liam
- ACS Nano, Vol. 15, Issue 5
Exchange of Ions across the TiN/TaOx Interface during Electroformation of TaOx-Based Resistive Switching Devices
journal, May 2020
- Ma, Yuanzhi; Cullen, David A.; Goodwill, Jonathan M.
- ACS Applied Materials & Interfaces, Vol. 12, Issue 24
Diffusion of oxygen in amorphous tantalum oxide
journal, May 2019
- Stewart, Derek A.
- Physical Review Materials, Vol. 3, Issue 5
Three-Dimensional Networked Nanoporous Ta2O5–x Memory System for Ultrahigh Density Storage
journal, August 2015
- Wang, Gunuk; Lee, Jae-Hwang; Yang, Yang
- Nano Letters, Vol. 15, Issue 9
Resistive Switching in Semimetallic SrIrO 3 Thin Films
journal, August 2019
- Fuentes, Víctor; Vasić, Borislav; Konstantinović, Zorica
- ACS Applied Electronic Materials, Vol. 1, Issue 9
The future of ferroelectric field-effect transistor technology
journal, October 2020
- Khan, Asif Islam; Keshavarzi, Ali; Datta, Suman
- Nature Electronics, Vol. 3, Issue 10
Parallel programming of an ionic floating-gate memory array for scalable neuromorphic computing
journal, April 2019
- Fuller, Elliot J.; Keene, Scott T.; Melianas, Armantas
- Science, Vol. 364, Issue 6440
A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
journal, July 2011
- Lee, Myoung-Jae; Lee, Chang Bum; Lee, Dongsoo
- Nature Materials, Vol. 10, Issue 8, p. 625-630
Lead-Free All-Inorganic Cesium Tin Iodide Perovskite for Filamentary and Interface-Type Resistive Switching toward Environment-Friendly and Temperature-Tolerant Nonvolatile Memories
journal, January 2019
- Han, Ji Su; Le, Quyet Van; Choi, Jaeho
- ACS Applied Materials & Interfaces, Vol. 11, Issue 8
The origin of the exceptionally low activation energy of oxygen vacancy in tantalum pentoxide based resistive memory
journal, November 2019
- Hur, Ji-Hyun
- Scientific Reports, Vol. 9, Issue 1
Medical Treatment of Peptic Ulcer
journal, September 1965
- Moore, Victor A.
- Postgraduate Medicine, Vol. 38, Issue 3
A scalable neural chip with synaptic electronics using CMOS integrated memristors
journal, September 2013
- Cruz-Albrecht, Jose M.; Derosier, Timothy; Srinivasa, Narayan
- Nanotechnology, Vol. 24, Issue 38
Low‐Conductance and Multilevel CMOS‐Integrated Nanoscale Oxide Memristors
journal, November 2018
- Sheng, Xia; Graves, Catherine E.; Kumar, Suhas
- Advanced Electronic Materials, Vol. 5, Issue 9