Highly Uniform Resistive Switching in HfO2 Films Embedded with Ordered Metal Nanoisland Arrays
Abstract
Abstract Memristors enter a critical developmental stage where emerging large‐scale integration methods face major challenges with severe switching instabilities in the oxide layer. Here, the superior uniformity is achieved within HfO 2 films by embedding highly ordered metal nanoisland (NI) arrays. Embedded films exhibit a significant reduction in both SET and RESET while displaying enhanced uniformity in operating voltages and resistance states. This behavior is attributed to the concentration of electric fields along Pt and Ti NIs and their interactions with the surrounding oxide film matrix environment, which induce separate and distinct filamentary formation mechanisms that affect the stability. A method is reported to further optimize the uniformity of the SET voltage by translating the NI array position down the film‐thickness dimension towards the bottom electrode. A comparison of the density and distribution of the oxygen vacancies responsible for the formation/dissolution of conducting filaments is made via combined electrostatic force microscopy and conductive atomic force microscopy (c‐AFM) studies. Finally, complete observation of the morphological evolution of conducting filaments produced by Pt and Ti is enabled by 3D c‐AFM nanotomography and cross‐sectional scanning transmission electron microscopy–energy dispersive spectroscopy to provide direct correlations between NI‐oxide interactions and overall switching performance.
- Authors:
-
[1];
[2];
[2];
[2];
[1]
- Univ. of Massachusetts, Amherst, MA (United States)
- Univ. of California, Irvine, CA (United States)
- Publication Date:
- Research Org.:
- Univ. of California, Irvine, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; National Science Foundation (NSF); USDOE
- OSTI Identifier:
- 1612194
- Alternate Identifier(s):
- OSTI ID: 1507442
- Grant/Contract Number:
- SC0014430; CMMI-1025020; CBET-1706113; DMR-1629270; DMR-1506535; DE‐SC0014430
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Advanced Functional Materials
- Additional Journal Information:
- Journal Volume: 29; Journal Issue: 25; Journal ID: ISSN 1616-301X
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; chemistry; science & technology; materials science; physics; filamentary conduction; memristor; nanotomography; oxygen vacancies; resistive switching
Citation Formats
Wang, Jiaying, Li, Linze, Huyan, Huaixun, Pan, Xiaoqing, and Nonnenmann, Stephen S. Highly Uniform Resistive Switching in HfO2 Films Embedded with Ordered Metal Nanoisland Arrays. United States: N. p., 2019.
Web. doi:10.1002/adfm.201808430.
Wang, Jiaying, Li, Linze, Huyan, Huaixun, Pan, Xiaoqing, & Nonnenmann, Stephen S. Highly Uniform Resistive Switching in HfO2 Films Embedded with Ordered Metal Nanoisland Arrays. United States. https://doi.org/10.1002/adfm.201808430
Wang, Jiaying, Li, Linze, Huyan, Huaixun, Pan, Xiaoqing, and Nonnenmann, Stephen S. Tue .
"Highly Uniform Resistive Switching in HfO2 Films Embedded with Ordered Metal Nanoisland Arrays". United States. https://doi.org/10.1002/adfm.201808430. https://www.osti.gov/servlets/purl/1612194.
@article{osti_1612194,
title = {Highly Uniform Resistive Switching in HfO2 Films Embedded with Ordered Metal Nanoisland Arrays},
author = {Wang, Jiaying and Li, Linze and Huyan, Huaixun and Pan, Xiaoqing and Nonnenmann, Stephen S.},
abstractNote = {Abstract Memristors enter a critical developmental stage where emerging large‐scale integration methods face major challenges with severe switching instabilities in the oxide layer. Here, the superior uniformity is achieved within HfO 2 films by embedding highly ordered metal nanoisland (NI) arrays. Embedded films exhibit a significant reduction in both SET and RESET while displaying enhanced uniformity in operating voltages and resistance states. This behavior is attributed to the concentration of electric fields along Pt and Ti NIs and their interactions with the surrounding oxide film matrix environment, which induce separate and distinct filamentary formation mechanisms that affect the stability. A method is reported to further optimize the uniformity of the SET voltage by translating the NI array position down the film‐thickness dimension towards the bottom electrode. A comparison of the density and distribution of the oxygen vacancies responsible for the formation/dissolution of conducting filaments is made via combined electrostatic force microscopy and conductive atomic force microscopy (c‐AFM) studies. Finally, complete observation of the morphological evolution of conducting filaments produced by Pt and Ti is enabled by 3D c‐AFM nanotomography and cross‐sectional scanning transmission electron microscopy–energy dispersive spectroscopy to provide direct correlations between NI‐oxide interactions and overall switching performance.},
doi = {10.1002/adfm.201808430},
journal = {Advanced Functional Materials},
number = 25,
volume = 29,
place = {United States},
year = {Tue Apr 16 00:00:00 EDT 2019},
month = {Tue Apr 16 00:00:00 EDT 2019}
}
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