Anomalous Hall effect in nanoscale structures of the antiferromagnetic Weyl semimetal Mn3Sn at room temperature
Abstract
The magnetic Weyl semimetallic state in the chiral antiferromagnet Mn3Sn has attracted interest for its potential in memory technology. Despite vanishingly small magnetization, the material exhibits large transverse responses that can be electrically manipulated, similar to ferromagnets. Through deposition on heated Si/SiO2 substrates, we have fabricated polycrystalline Mn3Sn films that have coarse surfaces, the thinner of which have a discontinuous structure comprised of grains with diameters of the order of 100 nm. Here we confirm that these grains retain the anomalous Hall effect arising in the time reversal symmetry broken chiral antiferromagnetic phase of Mn3Sn at room temperature by serially connecting the grains with an additional conducting layer. These results pave the path for the potential applications of nanoscale Mn3Sn systems, which could be useful in the development of energy efficient memory devices.
- Authors:
-
- Univ. of Tokyo (Japan)
- Univ. of Tokyo (Japan); Japan Science and Technology Agency (JST), Saitama (Japan). CREST
- Univ. of Tokyo (Japan); Japan Science and Technology Agency (JST), Saitama (Japan). CREST; Johns Hopkins Univ., Baltimore, MD (United States)
- Publication Date:
- Research Org.:
- Johns Hopkins Univ., Baltimore, MD (United States); Energy Frontier Research Centers (EFRC) (United States). Institute for Quantum Matter (IQM)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); Japan Science and Technology Agency (JST) (CREST); Japan Society for the Promotion of Science (JSPS) (KAKENHI)
- OSTI Identifier:
- 1979102
- Alternate Identifier(s):
- OSTI ID: 1874988
- Grant/Contract Number:
- SC0019331; JPMJCR18T3; JPMJMI20A1; 15H05882; 15H05883; 15K21732; 19H00650
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 121; Journal Issue: 1; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Physics
Citation Formats
Matsuo, Takumi, Higo, Tomoya, Nishio-Hamane, Daisuke, and Nakatsuji, Satoru. Anomalous Hall effect in nanoscale structures of the antiferromagnetic Weyl semimetal Mn3Sn at room temperature. United States: N. p., 2022.
Web. doi:10.1063/5.0095819.
Matsuo, Takumi, Higo, Tomoya, Nishio-Hamane, Daisuke, & Nakatsuji, Satoru. Anomalous Hall effect in nanoscale structures of the antiferromagnetic Weyl semimetal Mn3Sn at room temperature. United States. https://doi.org/10.1063/5.0095819
Matsuo, Takumi, Higo, Tomoya, Nishio-Hamane, Daisuke, and Nakatsuji, Satoru. Wed .
"Anomalous Hall effect in nanoscale structures of the antiferromagnetic Weyl semimetal Mn3Sn at room temperature". United States. https://doi.org/10.1063/5.0095819. https://www.osti.gov/servlets/purl/1979102.
@article{osti_1979102,
title = {Anomalous Hall effect in nanoscale structures of the antiferromagnetic Weyl semimetal Mn3Sn at room temperature},
author = {Matsuo, Takumi and Higo, Tomoya and Nishio-Hamane, Daisuke and Nakatsuji, Satoru},
abstractNote = {The magnetic Weyl semimetallic state in the chiral antiferromagnet Mn3Sn has attracted interest for its potential in memory technology. Despite vanishingly small magnetization, the material exhibits large transverse responses that can be electrically manipulated, similar to ferromagnets. Through deposition on heated Si/SiO2 substrates, we have fabricated polycrystalline Mn3Sn films that have coarse surfaces, the thinner of which have a discontinuous structure comprised of grains with diameters of the order of 100 nm. Here we confirm that these grains retain the anomalous Hall effect arising in the time reversal symmetry broken chiral antiferromagnetic phase of Mn3Sn at room temperature by serially connecting the grains with an additional conducting layer. These results pave the path for the potential applications of nanoscale Mn3Sn systems, which could be useful in the development of energy efficient memory devices.},
doi = {10.1063/5.0095819},
journal = {Applied Physics Letters},
number = 1,
volume = 121,
place = {United States},
year = {Wed Jul 06 00:00:00 EDT 2022},
month = {Wed Jul 06 00:00:00 EDT 2022}
}
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