Remote surface optical phonon scattering in ferroelectric Ba0.6Sr0.4TiO3 gated graphene
Abstract
We report the effect of remote surface optical (RSO) phonon scattering on carrier mobility in monolayer graphene gated by ferroelectric oxide. We fabricate monolayer graphene transistors back-gated by epitaxial (001) Ba0.6Sr0.4TiO3 films, with field effect mobility up to 23 000 cm2 V–1 s–1 achieved. Switching ferroelectric polarization induces nonvolatile modulation of resistance and quantum Hall effect in graphene at low temperatures. Ellipsometry spectroscopy studies reveal four pairs of optical phonon modes in Ba0.6Sr0.4TiO3, from which we extract RSO phonon frequencies. The temperature dependence of resistivity in graphene can be well accounted for by considering the scattering from the intrinsic longitudinal acoustic phonon and the RSO phonon, with the latter dominated by the mode at 35.8 meV. Furthermore, our study reveals the room temperature mobility limit of ferroelectric-gated graphene transistors imposed by RSO phonon scattering.
- Publication Date:
- Research Org.:
- Univ. of Nebraska, Lincoln, NE (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)
- OSTI Identifier:
- 1962668
- Alternate Identifier(s):
- OSTI ID: 1893213
- Grant/Contract Number:
- SC0016153; DMR-1710461
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 132; Journal Issue: 15; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 77 NANOSCIENCE AND NANOTECHNOLOGY; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; Dielectric properties; Electronic transport; Phonon scattering; Electrical mobility; Field effect transistors; Ferroelectric materials; Quantum Hall effect; Nonvolatile memory; Spectroscopy; Graphene
Citation Formats
Chen, Hanying, Li, Tianlin, Hao, Yifei, Rajapitamahuni, Anil, Xiao, Zhiyong, Schoeche, Stefan, Schubert, Mathias, and Hong, Xia. Remote surface optical phonon scattering in ferroelectric Ba0.6Sr0.4TiO3 gated graphene. United States: N. p., 2022.
Web. doi:10.1063/5.0106939.
Chen, Hanying, Li, Tianlin, Hao, Yifei, Rajapitamahuni, Anil, Xiao, Zhiyong, Schoeche, Stefan, Schubert, Mathias, & Hong, Xia. Remote surface optical phonon scattering in ferroelectric Ba0.6Sr0.4TiO3 gated graphene. United States. https://doi.org/10.1063/5.0106939
Chen, Hanying, Li, Tianlin, Hao, Yifei, Rajapitamahuni, Anil, Xiao, Zhiyong, Schoeche, Stefan, Schubert, Mathias, and Hong, Xia. Mon .
"Remote surface optical phonon scattering in ferroelectric Ba0.6Sr0.4TiO3 gated graphene". United States. https://doi.org/10.1063/5.0106939. https://www.osti.gov/servlets/purl/1962668.
@article{osti_1962668,
title = {Remote surface optical phonon scattering in ferroelectric Ba0.6Sr0.4TiO3 gated graphene},
author = {Chen, Hanying and Li, Tianlin and Hao, Yifei and Rajapitamahuni, Anil and Xiao, Zhiyong and Schoeche, Stefan and Schubert, Mathias and Hong, Xia},
abstractNote = {We report the effect of remote surface optical (RSO) phonon scattering on carrier mobility in monolayer graphene gated by ferroelectric oxide. We fabricate monolayer graphene transistors back-gated by epitaxial (001) Ba0.6Sr0.4TiO3 films, with field effect mobility up to 23 000 cm2 V–1 s–1 achieved. Switching ferroelectric polarization induces nonvolatile modulation of resistance and quantum Hall effect in graphene at low temperatures. Ellipsometry spectroscopy studies reveal four pairs of optical phonon modes in Ba0.6Sr0.4TiO3, from which we extract RSO phonon frequencies. The temperature dependence of resistivity in graphene can be well accounted for by considering the scattering from the intrinsic longitudinal acoustic phonon and the RSO phonon, with the latter dominated by the mode at 35.8 meV. Furthermore, our study reveals the room temperature mobility limit of ferroelectric-gated graphene transistors imposed by RSO phonon scattering.},
doi = {10.1063/5.0106939},
journal = {Journal of Applied Physics},
number = 15,
volume = 132,
place = {United States},
year = {Mon Oct 17 00:00:00 EDT 2022},
month = {Mon Oct 17 00:00:00 EDT 2022}
}
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