Top Stack Optimization for Cu2BaSn(S, Se)4 Photovoltaic Cell Leads to Improved Device Power Conversion Efficiency beyond 6%
Abstract
Abstract Earth‐abundant and air‐stable Cu 2 BaSnS 4− x Se x (CBTSSe) and related thin‐film absorbers are regarded as prospective options to meet the increasing demand for low‐cost solar cell deployment. Devices based on vacuum‐deposited CBTSSe absorbers have achieved record power conversion efficiency (PCE) of 5.2% based on a conventional device structure using CdS buffer and i‐ZnO/indium tin oxide (ITO) window layers, with open‐circuit voltage ( V OC ) posing the major bottleneck for improving solar cell performance. The current study demonstrates a >20% improvement in V OC (from 0.62 to 0.75 V) and corresponding enhancement in PCE (from 5.1% to 6.2% without antireflection coating; to 6.5% with MgF 2 antireflection coating) for solution‐deposited CBTSSe solar cells. This performance improvement is realized by introducing an alternative successive ionic layer adsorption and reaction‐deposited Zn 1− x Cd x S buffer combined with sputtered Zn 1− x Mg x O/Al‐doped ZnO window/top contact layer, which offers lower electron affinities relative to the conventional CdS/i‐ZnO/ITO stack and better matching with the low electron affinity of CBTSSe. A combined experimental (temperature‐ and light intensity‐dependent V OC measurements) and device simulation (SCAPS‐1D) evaluation points to the importance of addressing relative band offsets for both the buffermore »
- Authors:
-
[1]
- Duke Univ., Durham, NC (United States)
- Univ. of New South Wales, Sydney, NSW (Australia)
- Publication Date:
- Research Org.:
- Duke Univ., Durham, NC (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); Australian Renewable Energy Agency (ARENA)
- OSTI Identifier:
- 1903148
- Alternate Identifier(s):
- OSTI ID: 1885070
- Grant/Contract Number:
- SC0020061; ECCS-2025064; 2017/RND006
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Advanced Energy Materials
- Additional Journal Information:
- Journal Volume: 12; Journal Issue: 40; Journal ID: ISSN 1614-6832
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 25 ENERGY STORAGE; CBTSSe; solar cells; buffer/window layers; energy band alignments
Citation Formats
Teymur, Betul, Kim, Yongshin, Huang, Jialiang, Sun, Kaiwen, Hao, Xiaojing, and Mitzi, David B. Top Stack Optimization for Cu2BaSn(S, Se)4 Photovoltaic Cell Leads to Improved Device Power Conversion Efficiency beyond 6%. United States: N. p., 2022.
Web. doi:10.1002/aenm.202201602.
Teymur, Betul, Kim, Yongshin, Huang, Jialiang, Sun, Kaiwen, Hao, Xiaojing, & Mitzi, David B. Top Stack Optimization for Cu2BaSn(S, Se)4 Photovoltaic Cell Leads to Improved Device Power Conversion Efficiency beyond 6%. United States. https://doi.org/10.1002/aenm.202201602
Teymur, Betul, Kim, Yongshin, Huang, Jialiang, Sun, Kaiwen, Hao, Xiaojing, and Mitzi, David B. Thu .
"Top Stack Optimization for Cu2BaSn(S, Se)4 Photovoltaic Cell Leads to Improved Device Power Conversion Efficiency beyond 6%". United States. https://doi.org/10.1002/aenm.202201602. https://www.osti.gov/servlets/purl/1903148.
@article{osti_1903148,
title = {Top Stack Optimization for Cu2BaSn(S, Se)4 Photovoltaic Cell Leads to Improved Device Power Conversion Efficiency beyond 6%},
author = {Teymur, Betul and Kim, Yongshin and Huang, Jialiang and Sun, Kaiwen and Hao, Xiaojing and Mitzi, David B.},
abstractNote = {Abstract Earth‐abundant and air‐stable Cu 2 BaSnS 4− x Se x (CBTSSe) and related thin‐film absorbers are regarded as prospective options to meet the increasing demand for low‐cost solar cell deployment. Devices based on vacuum‐deposited CBTSSe absorbers have achieved record power conversion efficiency (PCE) of 5.2% based on a conventional device structure using CdS buffer and i‐ZnO/indium tin oxide (ITO) window layers, with open‐circuit voltage ( V OC ) posing the major bottleneck for improving solar cell performance. The current study demonstrates a >20% improvement in V OC (from 0.62 to 0.75 V) and corresponding enhancement in PCE (from 5.1% to 6.2% without antireflection coating; to 6.5% with MgF 2 antireflection coating) for solution‐deposited CBTSSe solar cells. This performance improvement is realized by introducing an alternative successive ionic layer adsorption and reaction‐deposited Zn 1− x Cd x S buffer combined with sputtered Zn 1− x Mg x O/Al‐doped ZnO window/top contact layer, which offers lower electron affinities relative to the conventional CdS/i‐ZnO/ITO stack and better matching with the low electron affinity of CBTSSe. A combined experimental (temperature‐ and light intensity‐dependent V OC measurements) and device simulation (SCAPS‐1D) evaluation points to the importance of addressing relative band offsets for both the buffer and window layers relative to the absorber in mitigating interfacial recombination and optimizing CBTSSe solar cell performance.},
doi = {10.1002/aenm.202201602},
journal = {Advanced Energy Materials},
number = 40,
volume = 12,
place = {United States},
year = {Thu Sep 01 00:00:00 EDT 2022},
month = {Thu Sep 01 00:00:00 EDT 2022}
}
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