n-Type doping of a solution processed p-type semiconductor using isoelectronic surface dopants for homojunction fabrication
Abstract
The p-n junction is one of the fundamental requirements for a practical semiconductor-based electronic device. Designing a heterojunction comprising of dissimilar p-type and n-type semiconductors calls for careful energy level considerations, both when selecting the semiconductor materials as well as the metal contacts. A homojunction based on a single semiconductor simplifies this task, as energy levels of the p-type and n-type materials are already fairly similar, allowing for easier selection of contacts. Traditionally, homojunctions rely on doping of a bulk semiconductor to achieve p- and n-type transport through controlled addition of aliovalent dopants via energy-intensive processes such as ion implantation or thermal annealing. Exact control of doping in nanocrystalline semiconductors is significantly more challenging, due to self-purification effects. However, owing to their large surface areas, surface moieties can be utilized to both dope the nanostructures as well as tune their energy levels. Here, we present a facile technique based on an isoelectronic surface dopant in order to achieve p- and n-type materials based on the same semiconductor. We show that thin p-type colloidal Bi2Te3 nanowires can be switched to n-type through surface functionalization, thus increasing the availability of new nanocrystalline solution-processable p-n homojunctions.
- Authors:
-
- New York University, Brooklyn, NY (United States)
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Univ. of California, Berkeley, CA (United States)
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). Molecular Foundry
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division
- OSTI Identifier:
- 1875451
- Alternate Identifier(s):
- OSTI ID: 1856455
- Grant/Contract Number:
- AC02-05CH11231; DMR-1420073; DMR-0923251
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Surface Science
- Additional Journal Information:
- Journal Volume: 590; Journal ID: ISSN 0169-4332
- Publisher:
- Elsevier
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; isoelectronic surface doping; p-n homojunction; solution processable; Bi2Te3 nanowires
Citation Formats
Mølnås, Håvard, Russ, Boris M., Farrell, Steven L., Gordon, Madeleine P., Urban, Jeffrey J., and Sahu, Ayaskanta. n-Type doping of a solution processed p-type semiconductor using isoelectronic surface dopants for homojunction fabrication. United States: N. p., 2022.
Web. doi:10.1016/j.apsusc.2022.153089.
Mølnås, Håvard, Russ, Boris M., Farrell, Steven L., Gordon, Madeleine P., Urban, Jeffrey J., & Sahu, Ayaskanta. n-Type doping of a solution processed p-type semiconductor using isoelectronic surface dopants for homojunction fabrication. United States. https://doi.org/10.1016/j.apsusc.2022.153089
Mølnås, Håvard, Russ, Boris M., Farrell, Steven L., Gordon, Madeleine P., Urban, Jeffrey J., and Sahu, Ayaskanta. Wed .
"n-Type doping of a solution processed p-type semiconductor using isoelectronic surface dopants for homojunction fabrication". United States. https://doi.org/10.1016/j.apsusc.2022.153089. https://www.osti.gov/servlets/purl/1875451.
@article{osti_1875451,
title = {n-Type doping of a solution processed p-type semiconductor using isoelectronic surface dopants for homojunction fabrication},
author = {Mølnås, Håvard and Russ, Boris M. and Farrell, Steven L. and Gordon, Madeleine P. and Urban, Jeffrey J. and Sahu, Ayaskanta},
abstractNote = {The p-n junction is one of the fundamental requirements for a practical semiconductor-based electronic device. Designing a heterojunction comprising of dissimilar p-type and n-type semiconductors calls for careful energy level considerations, both when selecting the semiconductor materials as well as the metal contacts. A homojunction based on a single semiconductor simplifies this task, as energy levels of the p-type and n-type materials are already fairly similar, allowing for easier selection of contacts. Traditionally, homojunctions rely on doping of a bulk semiconductor to achieve p- and n-type transport through controlled addition of aliovalent dopants via energy-intensive processes such as ion implantation or thermal annealing. Exact control of doping in nanocrystalline semiconductors is significantly more challenging, due to self-purification effects. However, owing to their large surface areas, surface moieties can be utilized to both dope the nanostructures as well as tune their energy levels. Here, we present a facile technique based on an isoelectronic surface dopant in order to achieve p- and n-type materials based on the same semiconductor. We show that thin p-type colloidal Bi2Te3 nanowires can be switched to n-type through surface functionalization, thus increasing the availability of new nanocrystalline solution-processable p-n homojunctions.},
doi = {10.1016/j.apsusc.2022.153089},
journal = {Applied Surface Science},
number = ,
volume = 590,
place = {United States},
year = {Wed Mar 16 00:00:00 EDT 2022},
month = {Wed Mar 16 00:00:00 EDT 2022}
}
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Works referenced in this record:
Colloidal Quantum Dot Solar Cells
journal, June 2015
- Carey, Graham H.; Abdelhady, Ahmed L.; Ning, Zhijun
- Chemical Reviews, Vol. 115, Issue 23
Doped Nanocrystals
journal, March 2008
- Norris, D. J.; Efros, A. L.; Erwin, S. C.
- Science, Vol. 319, Issue 5871
Energy Level Modification in Lead Sulfide Quantum Dot Thin Films through Ligand Exchange
journal, May 2014
- Brown, Patrick R.; Kim, Donghun; Lunt, Richard R.
- ACS Nano, Vol. 8, Issue 6
Controlling the Epitaxial Growth of Bi 2 Te 3 , BiTe, and Bi 4 Te 3 Pure Phases by Physical Vapor Transport
journal, August 2018
- Concepción, Omar; Galván-Arellano, Miguel; Torres-Costa, Vicente
- Inorganic Chemistry, Vol. 57, Issue 16
Enhanced thermoelectric efficiency in nanocrystalline bismuth telluride nanotubes
journal, June 2020
- Kim, DukSoo; Du, Renzhong; Yu, Shih-Ying
- Nanotechnology, Vol. 31, Issue 36
Thermoelectric properties of individual electrodeposited bismuth telluride nanowires
journal, September 2005
- Zhou, Jianhua; Jin, Chuangui; Seol, Jae Hun
- Applied Physics Letters, Vol. 87, Issue 13
Control of p-type and n-type thermoelectric properties of bismuth telluride thin films by combinatorial sputter coating technology
journal, June 2017
- Goto, Masahiro; Sasaki, Michiko; Xu, Yibin
- Applied Surface Science, Vol. 407
Bismuth Telluride (Bi 2 Te 3 ) Nanowires: Synthesis by Cyclic Electrodeposition/Stripping, Thinning by Electrooxidation, and Electrical Power Generation
journal, August 2006
- Menke, E. J.; Brown, M. A.; Li, Q.
- Langmuir, Vol. 22, Issue 25
Thermal properties of high quality single crystals of bismuth telluride—Part I: Experimental characterization
journal, January 1988
- Fleurial, J. P.; Gailliard, L.; Triboulet, R.
- Journal of Physics and Chemistry of Solids, Vol. 49, Issue 10
Understanding Doping of Quantum Materials
journal, January 2021
- Zunger, Alex; Malyi, Oleksandr I.
- Chemical Reviews, Vol. 121, Issue 5
Te-rich Bi2Te3 thin films by electron−beam deposition: Structural, electrical, optical and thermoelectric properties
journal, November 2020
- Sudarshan, C.; Jayakumar, S.; Vaideki, K.
- Thin Solid Films, Vol. 713
Semiconductor quantum dots: Technological progress and future challenges
journal, August 2021
- García de Arquer, F. Pelayo; Talapin, Dmitri V.; Klimov, Victor I.
- Science, Vol. 373, Issue 6555
Oxide and interface properties of anodic films on Hg 1− x Cd x Te
journal, September 1980
- Sun, T. S.; Buchner, S. P.; Byer, N. E.
- Journal of Vacuum Science and Technology, Vol. 17, Issue 5
Some Physico-Chemical Properties of Bismuth Chalcogenides x-Ray Photoelectron and Diffuse Reflectance Spectra
journal, January 1986
- Ismail, F. M.; Hanafi, Ζ. M.
- Zeitschrift für Physikalische Chemie, Vol. 267O, Issue 1
Air-Stable n-Doped Colloidal HgS Quantum Dots
journal, March 2014
- Jeong, Kwang Seob; Deng, Zhiyou; Keuleyan, Sean
- The Journal of Physical Chemistry Letters, Vol. 5, Issue 7
The work function of the elements and its periodicity
journal, November 1977
- Michaelson, Herbert B.
- Journal of Applied Physics, Vol. 48, Issue 11
Synthesis and Characterization of Monodisperse Nanocrystals and Close-Packed Nanocrystal Assemblies
journal, August 2000
- Murray, C. B.; Kagan, C. R.; Bawendi, M. G.
- Annual Review of Materials Science, Vol. 30, Issue 1, p. 545-610
Recent Progresses in Mid Infrared Nanocrystal Optoelectronics
journal, September 2017
- Lhuillier, Emmanuel; Guyot-Sionnest, Philippe
- IEEE Journal of Selected Topics in Quantum Electronics, Vol. 23, Issue 5
Electric and thermoelectric properties of electrodeposited bismuth telluride (Bi2Te3) films
journal, November 2004
- Takahashi, Makoto; Kojima, Masashi; Sato, Shoji
- Journal of Applied Physics, Vol. 96, Issue 10
In-situ resonant band engineering of solution-processed semiconductors generates high performance n-type thermoelectric nano-inks
journal, April 2020
- Sahu, Ayaskanta; Russ, Boris; Liu, Miao
- Nature Communications, Vol. 11, Issue 1
Rational Synthesis of Ultrathin n-Type Bi2Te3 Nanowires with Enhanced Thermoelectric Properties
journal, November 2011
- Zhang, Genqiang; Kirk, Benjamin; Jauregui, Luis A.
- Nano Letters, Vol. 12, Issue 1, p. 56-60
Large scale highly crystalline Bi2Te3 nanotubes through solution phase nanoscale Kirkendall effect fabrication
journal, January 2009
- Zhang, Genqiang; Yu, Qingxuan; Yao, Zhen
- Chemical Communications, Issue 17
Colloidal synthesis of nanocrystals and nanocrystal superlattices
journal, January 2001
- Murray, C. B.; Sun, Shouheng; Gaschler, W.
- IBM Journal of Research and Development, Vol. 45, Issue 1