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Title: Experimental Study of Acceptor Removal in UFSD

Abstract

The performance of the Ultra-Fast Silicon Detectors (UFSD) after irradiation with neutrons and protons is compromised by the removal of acceptors in the thin layer below the junction responsible for the gain. In this study, the effect is tested both with capacitance–voltage, C–V, measurements of the doping concentration and with measurements of charge collection, CC, using charged particles. We find a perfect linear correlation between the bias voltage to deplete the gain layer determined with C–V and the bias voltage to collect a defined charge, measured with charge collection. An example for the usefulness of this correlation is presented.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [2];  [3];  [4];  [3] more »;  [5];  [6];  [5];  [7];  [7];  [7];  [7];  [7] « less
+ Show Author Affiliations
  1. Univ. of California, Santa Cruz, CA (United States)
  2. National Institute for Nuclear Physics (INFN), Torino (Italy); Universita del Piemonte Orientale (Italy)
  3. National Institute for Nuclear Physics (INFN), Torino (Italy)
  4. Universita del Piemonte Orientale (Italy)
  5. Universita del Studie Torino (Italy)
  6. National Institute for Nuclear Physics (INFN), Torino (Italy); Universita del Studie Torino (Italy)
  7. Jozef Stefan Inst. (IJS), Ljubljana (Slovenia)
Publication Date:
Research Org.:
Univ. of California, Santa Cruz, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC); European Research Council (ERC); Slovenian Research Agency
OSTI Identifier:
1849514
Alternate Identifier(s):
OSTI ID: 1658425
Grant/Contract Number:  
FG02-04ER41286; 654168; 669529; UFSD669529; J1-1699; P1-0135
Resource Type:
Accepted Manuscript
Journal Name:
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
Additional Journal Information:
Journal Volume: 983; Journal Issue: C; Journal ID: ISSN 0168-9002
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
73 NUCLEAR PHYSICS AND RADIATION PHYSICS; instruments & instrumentation; nuclear science & technology; physics; ultra-fast silicon detectors; low-gain avalanche detectors; radiation damage; acceptor removal; correlation C-V and charge collection

Citation Formats

Jin, Y., Ren, H., Christie, S., Galloway, Z., Gee, C., Labitan, C., Lockerby, M., Martinez-McKinney, F., Mazza, S. M., Padilla, R., Sadrozinski, H. F. -W., Schumm, B., Seiden, A., Wilder, M., Wyatt, W., Zhao, Y., Arcidiacono, R., Cartiglia, N., Ferrero, M., Mandurrino, M., Siviero, F., Sola, V., Tornago, M., Cindro, V., Howard, A., Kramberger, G., Mandić, I., and Mikuž, M. Experimental Study of Acceptor Removal in UFSD. United States: N. p., 2020. Web. doi:10.1016/j.nima.2020.164611.
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Jin, Y., Ren, H., Christie, S., Galloway, Z., Gee, C., Labitan, C., Lockerby, M., Martinez-McKinney, F., Mazza, S. M., Padilla, R., Sadrozinski, H. F. -W., Schumm, B., Seiden, A., Wilder, M., Wyatt, W., Zhao, Y., Arcidiacono, R., Cartiglia, N., Ferrero, M., Mandurrino, M., Siviero, F., Sola, V., Tornago, M., Cindro, V., Howard, A., Kramberger, G., Mandić, I., & Mikuž, M. Experimental Study of Acceptor Removal in UFSD. United States. https://doi.org/10.1016/j.nima.2020.164611
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Jin, Y., Ren, H., Christie, S., Galloway, Z., Gee, C., Labitan, C., Lockerby, M., Martinez-McKinney, F., Mazza, S. M., Padilla, R., Sadrozinski, H. F. -W., Schumm, B., Seiden, A., Wilder, M., Wyatt, W., Zhao, Y., Arcidiacono, R., Cartiglia, N., Ferrero, M., Mandurrino, M., Siviero, F., Sola, V., Tornago, M., Cindro, V., Howard, A., Kramberger, G., Mandić, I., and Mikuž, M. Mon . "Experimental Study of Acceptor Removal in UFSD". United States. https://doi.org/10.1016/j.nima.2020.164611. https://www.osti.gov/servlets/purl/1849514.
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@article{osti_1849514,
title = {Experimental Study of Acceptor Removal in UFSD},
author = {Jin, Y. and Ren, H. and Christie, S. and Galloway, Z. and Gee, C. and Labitan, C. and Lockerby, M. and Martinez-McKinney, F. and Mazza, S. M. and Padilla, R. and Sadrozinski, H. F. -W. and Schumm, B. and Seiden, A. and Wilder, M. and Wyatt, W. and Zhao, Y. and Arcidiacono, R. and Cartiglia, N. and Ferrero, M. and Mandurrino, M. and Siviero, F. and Sola, V. and Tornago, M. and Cindro, V. and Howard, A. and Kramberger, G. and Mandić, I. and Mikuž, M.},
abstractNote = {The performance of the Ultra-Fast Silicon Detectors (UFSD) after irradiation with neutrons and protons is compromised by the removal of acceptors in the thin layer below the junction responsible for the gain. In this study, the effect is tested both with capacitance–voltage, C–V, measurements of the doping concentration and with measurements of charge collection, CC, using charged particles. We find a perfect linear correlation between the bias voltage to deplete the gain layer determined with C–V and the bias voltage to collect a defined charge, measured with charge collection. An example for the usefulness of this correlation is presented.},
doi = {10.1016/j.nima.2020.164611},
journal = {Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment},
number = C,
volume = 983,
place = {United States},
year = {Mon Sep 07 00:00:00 EDT 2020},
month = {Mon Sep 07 00:00:00 EDT 2020}
}
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https://doi.org/10.1016/j.nima.2020.164611
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Works referenced in this record:

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4D tracking with ultra-fast silicon detectors
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Technology developments and first measurements of Low Gain Avalanche Detectors (LGAD) for high energy physics applications
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Temperature Dependence of Impact Ionization in Submicrometer Silicon Devices
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Radiation effects in Low Gain Avalanche Detectors after hadron irradiations
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