Search Menu
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information
Search Scholarly Publications

Title: Properties of HPK UFSD after neutron irradiation up to 6e15 n/cm2

Abstract

In this article we report results from a neutron irradiation campaign of Ultra-Fast Silicon Detectors (UFSD) with fluences of 1e14, 3e14, 6e14, 1e15, 3e15 and 6e15 neq/cm2. The UFSD used in this study are circular 50 μm thick Low-Gain Avalanche Detectors (LGAD), with a 1.0 mm diameter active area. Hamamatsu Photonics (HPK), Japan, produced the UFSD with pre-irradiation internal gain in the range 5–70 depending on the bias voltage. The sensors were tested pre-irradiation and post-irradiation with minimum ionizing particles (MIPs) from a 90Sr β-source. The leakage current, internal gain and the timing resolution were measured as a function of bias voltage at -20 °C and -30 °C. The timing resolution of each device under test was extracted from the time difference with a second calibrated UFSD in coincidence, using the constant fraction discriminator (CFD) method for both. The dependence of the gain upon the irradiation fluence is consistent with the acceptor removal mechanism; at -20 °C the highest gain decreases from 70 before radiation to 2 after a fluence of 6e15 n/cm2. Consequently, the timing resolution was found to deteriorate from 20 ps to 50 ps. The results indicate that the most accurate time resolution is obtained varying withmore » fluence the CFD value used to determine the time of arrival, from 0.1 for pre-irradiated sensors to 0.6 at the highest fluence. Key changes to the pulse shape induced by irradiation, i.e. (i) the contribution of charge multiplication not limited to the gain layer zone, (ii) the shortening of the rise time and (iii) the reduced pulse height, were compared with the WF2 simulation program and were found to be in agreement.« less

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [2];  [2];  [2];  [2] more »;  [2];  [3];  [4];  [4];  [4];  [4];  [4] « less
+ Show Author Affiliations
  1. Univ. of California, Santa Cruz, CA (United States)
  2. Istituto Nazionale di Fisica Nucleare (INFN), Torino (Italy)
  3. Università del Piemonte Orientale (Italy) ; Istituto Nazionale di Fisica Nucleare (INFN) (Italy)
  4. University of Ljubljana (Slovenia)
Publication Date:
Research Org.:
Univ. of California, Santa Cruz, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1800169
Alternate Identifier(s):
OSTI ID: 1564447
Grant/Contract Number:  
FG02-04ER41286
Resource Type:
Accepted Manuscript
Journal Name:
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
Additional Journal Information:
Journal Volume: 940; Journal Issue: C; Journal ID: ISSN 0168-9002
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; Instruments & Instrumentation; Nuclear Science & Technology; Physics

Citation Formats

Galloway, Z., Fadeyev, V., Freeman, P., Gkougkousis, E., Gee, C., Gruey, B., Labitan, C. A., Luce, Z., McKinney-Martinez, F., Sadrozinski, H. F. -W., Seiden, A., Spencer, E., Wilder, M., Woods, N., Zatserklyaniy, A., Zhao, Y., Cartiglia, N., Ferrero, M., Mandurrino, M., Staiano, A., Sola, V., Arcidiacono, R., Cindro, V., Kramberger, G., Mandić, I., Mikuž, M., and Zavrtanik, M. Properties of HPK UFSD after neutron irradiation up to 6e15 n/cm2. United States: N. p., 2019. Web. doi:10.1016/j.nima.2019.05.017.
Copy to clipboard
Galloway, Z., Fadeyev, V., Freeman, P., Gkougkousis, E., Gee, C., Gruey, B., Labitan, C. A., Luce, Z., McKinney-Martinez, F., Sadrozinski, H. F. -W., Seiden, A., Spencer, E., Wilder, M., Woods, N., Zatserklyaniy, A., Zhao, Y., Cartiglia, N., Ferrero, M., Mandurrino, M., Staiano, A., Sola, V., Arcidiacono, R., Cindro, V., Kramberger, G., Mandić, I., Mikuž, M., & Zavrtanik, M. Properties of HPK UFSD after neutron irradiation up to 6e15 n/cm2. United States. https://doi.org/10.1016/j.nima.2019.05.017
Copy to clipboard
Galloway, Z., Fadeyev, V., Freeman, P., Gkougkousis, E., Gee, C., Gruey, B., Labitan, C. A., Luce, Z., McKinney-Martinez, F., Sadrozinski, H. F. -W., Seiden, A., Spencer, E., Wilder, M., Woods, N., Zatserklyaniy, A., Zhao, Y., Cartiglia, N., Ferrero, M., Mandurrino, M., Staiano, A., Sola, V., Arcidiacono, R., Cindro, V., Kramberger, G., Mandić, I., Mikuž, M., and Zavrtanik, M. Tue . "Properties of HPK UFSD after neutron irradiation up to 6e15 n/cm2". United States. https://doi.org/10.1016/j.nima.2019.05.017. https://www.osti.gov/servlets/purl/1800169.
Copy to clipboard
@article{osti_1800169,
title = {Properties of HPK UFSD after neutron irradiation up to 6e15 n/cm2},
author = {Galloway, Z. and Fadeyev, V. and Freeman, P. and Gkougkousis, E. and Gee, C. and Gruey, B. and Labitan, C. A. and Luce, Z. and McKinney-Martinez, F. and Sadrozinski, H. F. -W. and Seiden, A. and Spencer, E. and Wilder, M. and Woods, N. and Zatserklyaniy, A. and Zhao, Y. and Cartiglia, N. and Ferrero, M. and Mandurrino, M. and Staiano, A. and Sola, V. and Arcidiacono, R. and Cindro, V. and Kramberger, G. and Mandić, I. and Mikuž, M. and Zavrtanik, M.},
abstractNote = {In this article we report results from a neutron irradiation campaign of Ultra-Fast Silicon Detectors (UFSD) with fluences of 1e14, 3e14, 6e14, 1e15, 3e15 and 6e15 neq/cm2. The UFSD used in this study are circular 50 μm thick Low-Gain Avalanche Detectors (LGAD), with a 1.0 mm diameter active area. Hamamatsu Photonics (HPK), Japan, produced the UFSD with pre-irradiation internal gain in the range 5–70 depending on the bias voltage. The sensors were tested pre-irradiation and post-irradiation with minimum ionizing particles (MIPs) from a 90Sr β-source. The leakage current, internal gain and the timing resolution were measured as a function of bias voltage at -20 °C and -30 °C. The timing resolution of each device under test was extracted from the time difference with a second calibrated UFSD in coincidence, using the constant fraction discriminator (CFD) method for both. The dependence of the gain upon the irradiation fluence is consistent with the acceptor removal mechanism; at -20 °C the highest gain decreases from 70 before radiation to 2 after a fluence of 6e15 n/cm2. Consequently, the timing resolution was found to deteriorate from 20 ps to 50 ps. The results indicate that the most accurate time resolution is obtained varying with fluence the CFD value used to determine the time of arrival, from 0.1 for pre-irradiated sensors to 0.6 at the highest fluence. Key changes to the pulse shape induced by irradiation, i.e. (i) the contribution of charge multiplication not limited to the gain layer zone, (ii) the shortening of the rise time and (iii) the reduced pulse height, were compared with the WF2 simulation program and were found to be in agreement.},
doi = {10.1016/j.nima.2019.05.017},
journal = {Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment},
number = C,
volume = 940,
place = {United States},
year = {Tue Oct 01 00:00:00 EDT 2019},
month = {Tue Oct 01 00:00:00 EDT 2019}
}
Copy to clipboard
Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1016/j.nima.2019.05.017
Copyright Statement
Other availability
Search WorldCat Search WorldCat to find libraries that may hold this journal
Citation Metrics:
Cited by: 27 works
Citation information provided by
Web of Science
Save / Share:
Export Metadata
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.

Works referenced in this record:

Ultra-fast silicon detectors (UFSD)
journal, September 2016

  • Sadrozinski, H. F. -W.; Anker, A.; Chen, J.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 831
  • DOI: 10.1016/j.nima.2016.03.093

Weightfield2: A fast simulator for silicon and diamond solid state detector
journal, October 2015

  • Cenna, Francesca; Cartiglia, N.; Friedl, M.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 796
  • DOI: 10.1016/j.nima.2015.04.015

Beam test results of a 16 ps timing system based on ultra-fast silicon detectors
journal, April 2017

  • Cartiglia, N.; Staiano, A.; Sola, V.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 850
  • DOI: 10.1016/j.nima.2017.01.021

Design optimization of ultra-fast silicon detectors
journal, October 2015

  • Cartiglia, N.; Arcidiacono, R.; Baselga, M.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 796
  • DOI: 10.1016/j.nima.2015.04.025

Computational analysis of irradiation facilities at the JSI TRIGA reactor
journal, March 2012

Performance of ultra-fast silicon detectors
journal, February 2014

Signal formation in irradiated silicon detectors
journal, February 2017

  • Baldassarri, B.; Cartiglia, N.; Cenna, F.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 845
  • DOI: 10.1016/j.nima.2016.06.010

Trapping in proton irradiated p + -n-n + silicon sensors at fluences anticipated at the HL-LHC outer tracker
journal, April 2016

4D tracking with ultra-fast silicon detectors
journal, December 2017

  • Sadrozinski, Hartmut F-W; Seiden, Abraham; Cartiglia, Nicolò
  • Reports on Progress in Physics, Vol. 81, Issue 2
  • DOI: 10.1088/1361-6633/aa94d3

Technology developments and first measurements of Low Gain Avalanche Detectors (LGAD) for high energy physics applications
journal, November 2014

  • Pellegrini, G.; Fernández-Martínez, P.; Baselga, M.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 765
  • DOI: 10.1016/j.nima.2014.06.008

Gain and time resolution of 45 μm thin Low Gain Avalanche Detectors before and after irradiation up to a fluence of 10 15 n eq /cm 2
journal, May 2017

Energy loss measurement for charged particles in very thin silicon layers
journal, June 2011

Comparing radiation tolerant materials and devices for ultra rad-hard tracking detectors
journal, September 2007

  • Bruzzi, Mara; Sadrozinski, Hartmut F. -W.; Seiden, Abraham
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 579, Issue 2
  • DOI: 10.1016/j.nima.2007.05.326

Temperature Dependence of Impact Ionization in Submicrometer Silicon Devices
journal, September 2006

  • Massey, D. J.; David, J. P. R.; Rees, G. J.
  • IEEE Transactions on Electron Devices, Vol. 53, Issue 9
  • DOI: 10.1109/TED.2006.881010

Radiation effects in Low Gain Avalanche Detectors after hadron irradiations
journal, July 2015

    Sort by:
    [ × clear filter / sort ]

    Similar Records in DOE PAGES and OSTI.GOV collections: