Metal-insulator transition and doping-induced phase change in Ge2Sb2Se5xTe5-5x
Abstract
Ge2Sb2Te5 (GST-225), a phase change material (PCM) with vast differences in the electrical and optical characteristics between its amorphous and crystalline phases, is revisited to explore its properties with Se doping. GST crystallizes in a layered hexagonal ground state, while the precursor to the amorphous state is a distorted rock salt like structure with vacancies at the Ge/Sb sites. Upon doping, liquid nitrogen quenched Ge2Sb2Se5xTe5-5x (GSST-225) exhibits a direct hexagonal-to-amorphous phase change above x > 0.8, whereas the rock salt like structure appears as a second phase with a volume fraction that does not change as a function of the doping. The phase change is accompanied by a metal-to-insulator transition (MIT), with a several orders of magnitude increase in the resistivity on approaching the amorphous state. Additionally, a similar MIT is observed even without the phase change in hexagonal crystals with doping levels above x >0.8. On warming amorphous GSST (x = 0.9) above room temperature, a reversal to the hexagonal phase occurs with a re-crystallization onset temperature (Tc) above 300 °C, much higher than the Tc (~170 °C) of amorphous GST and an activation energy of 1.47 eV, which is comparable to good glass formers.
- Authors:
-
- University of Virginia, Charlottesville, VA (United States). Dept. of Physics
- Department of Emerging Materials Science, DGIST, Daegu (South Korea)
- Publication Date:
- Research Org.:
- Univ. of Virginia, Charlottesville, VA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC)
- OSTI Identifier:
- 1849393
- Alternate Identifier(s):
- OSTI ID: 1712506
- Grant/Contract Number:
- FG02-01ER45927
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 117; Journal Issue: 19; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Physics
Citation Formats
Xu, Zhenyang, Park, Keeseong, Schneeloch, John A., and Louca, Despina. Metal-insulator transition and doping-induced phase change in Ge2Sb2Se5xTe5-5x. United States: N. p., 2020.
Web. doi:10.1063/5.0030956.
Xu, Zhenyang, Park, Keeseong, Schneeloch, John A., & Louca, Despina. Metal-insulator transition and doping-induced phase change in Ge2Sb2Se5xTe5-5x. United States. https://doi.org/10.1063/5.0030956
Xu, Zhenyang, Park, Keeseong, Schneeloch, John A., and Louca, Despina. Mon .
"Metal-insulator transition and doping-induced phase change in Ge2Sb2Se5xTe5-5x". United States. https://doi.org/10.1063/5.0030956. https://www.osti.gov/servlets/purl/1849393.
@article{osti_1849393,
title = {Metal-insulator transition and doping-induced phase change in Ge2Sb2Se5xTe5-5x},
author = {Xu, Zhenyang and Park, Keeseong and Schneeloch, John A. and Louca, Despina},
abstractNote = {Ge2Sb2Te5 (GST-225), a phase change material (PCM) with vast differences in the electrical and optical characteristics between its amorphous and crystalline phases, is revisited to explore its properties with Se doping. GST crystallizes in a layered hexagonal ground state, while the precursor to the amorphous state is a distorted rock salt like structure with vacancies at the Ge/Sb sites. Upon doping, liquid nitrogen quenched Ge2Sb2Se5xTe5-5x (GSST-225) exhibits a direct hexagonal-to-amorphous phase change above x > 0.8, whereas the rock salt like structure appears as a second phase with a volume fraction that does not change as a function of the doping. The phase change is accompanied by a metal-to-insulator transition (MIT), with a several orders of magnitude increase in the resistivity on approaching the amorphous state. Additionally, a similar MIT is observed even without the phase change in hexagonal crystals with doping levels above x >0.8. On warming amorphous GSST (x = 0.9) above room temperature, a reversal to the hexagonal phase occurs with a re-crystallization onset temperature (Tc) above 300 °C, much higher than the Tc (~170 °C) of amorphous GST and an activation energy of 1.47 eV, which is comparable to good glass formers.},
doi = {10.1063/5.0030956},
journal = {Applied Physics Letters},
number = 19,
volume = 117,
place = {United States},
year = {Mon Nov 09 00:00:00 EST 2020},
month = {Mon Nov 09 00:00:00 EST 2020}
}
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