Metal-insulator transition and doping-induced phase change in Ge2Sb2Se5xTe5-5x
Abstract
Ge2Sb2Te5 (GST-225), a phase change material (PCM) with vast differences in the electrical and optical characteristics between its amorphous and crystalline phases, is revisited to explore its properties with Se doping. GST crystallizes in a layered hexagonal ground state, while the precursor to the amorphous state is a distorted rock salt like structure with vacancies at the Ge/Sb sites. Upon doping, liquid nitrogen quenched Ge2Sb2Se5xTe5-5x (GSST-225) exhibits a direct hexagonal-to-amorphous phase change above x > 0.8, whereas the rock salt like structure appears as a second phase with a volume fraction that does not change as a function of the doping. The phase change is accompanied by a metal-to-insulator transition (MIT), with a several orders of magnitude increase in the resistivity on approaching the amorphous state. Additionally, a similar MIT is observed even without the phase change in hexagonal crystals with doping levels above x >0.8. On warming amorphous GSST (x = 0.9) above room temperature, a reversal to the hexagonal phase occurs with a re-crystallization onset temperature (Tc) above 300 °C, much higher than the Tc (~170 °C) of amorphous GST and an activation energy of 1.47 eV, which is comparable to good glass formers.
- Authors:
-
[1];
[1];
[1]
- University of Virginia, Charlottesville, VA (United States). Dept. of Physics
- Department of Emerging Materials Science, DGIST, Daegu (South Korea)
- Publication Date:
- Research Org.:
- Univ. of Virginia, Charlottesville, VA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC)
- OSTI Identifier:
- 1849393
- Alternate Identifier(s):
- OSTI ID: 1712506
- Grant/Contract Number:
- FG02-01ER45927
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 117; Journal Issue: 19; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Physics
Citation Formats
Xu, Zhenyang, Park, Keeseong, Schneeloch, John A., and Louca, Despina. Metal-insulator transition and doping-induced phase change in Ge2Sb2Se5xTe5-5x. United States: N. p., 2020.
Web. doi:10.1063/5.0030956.
Xu, Zhenyang, Park, Keeseong, Schneeloch, John A., & Louca, Despina. Metal-insulator transition and doping-induced phase change in Ge2Sb2Se5xTe5-5x. United States. https://doi.org/10.1063/5.0030956
Xu, Zhenyang, Park, Keeseong, Schneeloch, John A., and Louca, Despina. Mon .
"Metal-insulator transition and doping-induced phase change in Ge2Sb2Se5xTe5-5x". United States. https://doi.org/10.1063/5.0030956. https://www.osti.gov/servlets/purl/1849393.
@article{osti_1849393,
title = {Metal-insulator transition and doping-induced phase change in Ge2Sb2Se5xTe5-5x},
author = {Xu, Zhenyang and Park, Keeseong and Schneeloch, John A. and Louca, Despina},
abstractNote = {Ge2Sb2Te5 (GST-225), a phase change material (PCM) with vast differences in the electrical and optical characteristics between its amorphous and crystalline phases, is revisited to explore its properties with Se doping. GST crystallizes in a layered hexagonal ground state, while the precursor to the amorphous state is a distorted rock salt like structure with vacancies at the Ge/Sb sites. Upon doping, liquid nitrogen quenched Ge2Sb2Se5xTe5-5x (GSST-225) exhibits a direct hexagonal-to-amorphous phase change above x > 0.8, whereas the rock salt like structure appears as a second phase with a volume fraction that does not change as a function of the doping. The phase change is accompanied by a metal-to-insulator transition (MIT), with a several orders of magnitude increase in the resistivity on approaching the amorphous state. Additionally, a similar MIT is observed even without the phase change in hexagonal crystals with doping levels above x >0.8. On warming amorphous GSST (x = 0.9) above room temperature, a reversal to the hexagonal phase occurs with a re-crystallization onset temperature (Tc) above 300 °C, much higher than the Tc (~170 °C) of amorphous GST and an activation energy of 1.47 eV, which is comparable to good glass formers.},
doi = {10.1063/5.0030956},
journal = {Applied Physics Letters},
number = 19,
volume = 117,
place = {United States},
year = {Mon Nov 09 00:00:00 EST 2020},
month = {Mon Nov 09 00:00:00 EST 2020}
}
Free Publicly Available Full Text
Publisher's Version of Record
Other availability
Search WorldCat to find libraries that may hold this journal
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Origin, secret, and application of the ideal phase-change material GeSbTe
journal, October 2012
- Yamada, Noboru
- physica status solidi (b), Vol. 249, Issue 10
Structure of laser-crystallized Ge2Sb2+xTe5 sputtered thin films for use in optical memory
journal, December 2000
- Yamada, Noboru; Matsunaga, Toshiyuki
- Journal of Applied Physics, Vol. 88, Issue 12
Role of vacancies in metal–insulator transitions of crystalline phase-change materials
journal, October 2012
- Zhang, W.; Thiess, A.; Zalden, P.
- Nature Materials, Vol. 11, Issue 11
Structural transformations of Ge2Sb2Te5 films studied by electrical resistance measurements
journal, May 2000
- Friedrich, I.; Weidenhof, V.; Njoroge, W.
- Journal of Applied Physics, Vol. 87, Issue 9
Phase-change materials for rewriteable data storage
journal, November 2007
- Wuttig, Matthias; Yamada, Noboru
- Nature Materials, Vol. 6, Issue 11
Ferroelectric Order Control of the Dirac-Semimetal Phase in GeTe-Sb 2 Te 3 Superlattices
journal, December 2013
- Tominaga, J.; Kolobov, A. V.; Fons, P.
- Advanced Materials Interfaces, Vol. 1, Issue 1
Van der Waals interfacial bonding and intermixing in GeTe-Sb2Te3-based superlattices
journal, February 2018
- Lotnyk, Andriy; Hilmi, Isom; Ross, Ulrich
- Nano Research, Vol. 11, Issue 3
Model for crystallization kinetics: Deviations from Kolmogorov–Johnson–Mehl–Avrami kinetics
journal, October 1999
- Castro, Mario; Domı́nguez-Adame, Francisco; Sánchez, Angel
- Applied Physics Letters, Vol. 75, Issue 15
Kinetics of crystallization of Ge30-xSe70Sbx (x=15, 20, 25) chalcogenide glasses
journal, January 2014
- Kaswan, Anusaiya; Kumari, Vandana; Patidar, Dinesh
- Processing and Application of Ceramics, Vol. 8, Issue 1
Crystalline and amorphous structures of Ge–Sb–Te nanoparticles
journal, July 2007
- Park, Gyeong-Su; Kwon, Ji-Hwan; Kim, Miyoung
- Journal of Applied Physics, Vol. 102, Issue 1
A Review on Disorder-Driven Metal–Insulator Transition in Crystalline Vacancy-Rich GeSbTe Phase-Change Materials
journal, July 2017
- Wang, Jiang-Jing; Xu, Ya-Zhi; Mazzarello, Riccardo
- Materials, Vol. 10, Issue 8
Temperature dependent resonant X-ray diffraction of single-crystalline Ge2Sb2Te5
journal, January 2013
- Urban, Philipp; Schneider, Matthias N.; Erra, Loredana
- CrystEngComm, Vol. 15, Issue 24
Disorder-Driven Metal-Insulator Transitions in Deformable Lattices
journal, January 2017
- Di Sante, Domenico; Fratini, Simone; Dobrosavljević, Vladimir
- Physical Review Letters, Vol. 118, Issue 3
Phase transformation in Pb:GeSbTe chalcogenide films
journal, October 2008
- Kumar, J.; Kumar, P.; Ahmad, M.
- The European Physical Journal Applied Physics, Vol. 44, Issue 2
Topological and chemical ordering induced by and in metallic glass
journal, December 2004
- Ahn, Kyungsoo; Louca, Despina; Poon, S. J.
- Physical Review B, Vol. 70, Issue 22
Kinetics of Phase Change. II Transformation‐Time Relations for Random Distribution of Nuclei
journal, February 1940
- Avrami, Melvin
- The Journal of Chemical Physics, Vol. 8, Issue 2
Weyl node assisted conductivity switch in interfacial phase-change memory with van der Waals interfaces
journal, December 2017
- Kim, Jinwoong; Kim, Jeongwoo; Song, Young-Sun
- Physical Review B, Vol. 96, Issue 23
Phase-change materials for non-volatile memory devices: from technological challenges to materials science issues
journal, December 2017
- Noé, Pierre; Vallée, Christophe; Hippert, Françoise
- Semiconductor Science and Technology, Vol. 33, Issue 1
Disorder-induced localization in crystalline phase-change materials
journal, January 2011
- Siegrist, T.; Jost, P.; Volker, H.
- Nature Materials, Vol. 10, Issue 3
First-sharp diffraction peaks in amorphous GeTe and Ge 2 Sb 2 Te 5 films prepared by vacuum-thermal deposition
journal, December 2012
- Nakaoka, Toshihiro; Satoh, Hiroki; Honjo, Saori
- AIP Advances, Vol. 2, Issue 4
Kinetics of Phase Change. I General Theory
journal, December 1939
- Avrami, Melvin
- The Journal of Chemical Physics, Vol. 7, Issue 12, p. 1103-1112
New Structural Picture of the Phase-Change Alloy
journal, January 2011
- Liu, X. Q.; Li, X. B.; Zhang, L.
- Physical Review Letters, Vol. 106, Issue 2
In situ immune response and mechanisms of cell damage in central nervous system of fatal cases microcephaly by Zika virus
journal, January 2018
- Azevedo, Raimunda S. S.; de Sousa, Jorge R.; Araujo, Marialva T. F.
- Scientific Reports, Vol. 8, Issue 1
Electron diffraction and high-resolution transmission electron microscopy of the high temperature crystal structures of GexSb2Te3+x (x=1,2,3) phase change material
journal, October 2002
- Kooi, B. J.; De Hosson, J. Th. M.
- Journal of Applied Physics, Vol. 92, Issue 7
Electrical properties of the Ge2Sb2Te5 thin films for phase change memory application
conference, January 2016
- Lazarenko, P. I.; Sherchenkov, A. A.; Kozyukhin, S. A.
- REVIEW OF PROGRESS IN QUANTITATIVE NONDESTRUCTIVE EVALUATION: Proceedings of the 35th Annual Review of Progress in Quantitative Nondestructive Evaluation, AIP Conference Proceedings
The Electrical and Structural Properties of Nitrogen Ge1Sb2Te4 Thin Film
journal, March 2018
- Osiac, Mariana
- Coatings, Vol. 8, Issue 4
Disorder‐Induced Localization in Crystalline Pseudo‐Binary GeTe–Sb 2 Te 3 Alloys between Ge 3 Sb 2 Te 6 and GeTe
journal, May 2015
- Jost, Peter; Volker, Hanno; Poitz, Annika
- Advanced Functional Materials, Vol. 25, Issue 40