Controlling the Schottky Barrier at the Pt/TiO2 Interface by Intercalation of a Self-Assembled Monolayer with Oriented Dipole Moments
Abstract
Interfacial Schottky barriers can impact the catalytic function of Pt on TiO2. Since the electronic structure is characteristic of each material, it may be advantageous to tailor the interfacial Schottky barrier by the addition of adsorbed layers. Here, we show that the Schottky barrier in Pt/TiO2 can be mitigated by the insertion of self-assembled monolayers (SAM) of carboranethiols that possess an oriented dipole moment. A Pt substrate with the SAM on which TiO2 nanoparticles are deposited is used to that effect. Kelvin Probe Force Microscopy shows thatm-9-carboranethiolate SAM with perpendicular dipole moments decreases the potential difference between TiO2 and Pt by ~0.3 eV due to the interfacial electric field of the SAM. Furthermore, our findings open new opportunities for tailoring interfacial electronic structures not only in the metal-semiconductor junction, but also the semiconductor heterojunctions.
- Authors:
-
[1];
[2];
[1];
[3];
[4];
[1];
[3];
- Tokyo Inst. of Technology (Japan)
- Univ. of Tokyo (Japan)
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Univ. of Connecticut, Storrs, CT (United States)
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1844529
- Grant/Contract Number:
- AC02-05CH11231
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Physical Chemistry. C
- Additional Journal Information:
- Journal Volume: 125; Journal Issue: 25; Journal ID: ISSN 1932-7447
- Publisher:
- American Chemical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; Interfaces; Oxides; Metal nanoparticles; Platinum; Nanoparticles
Citation Formats
Ano, Taishi, Kishimoto, Fuminao, Tsubaki, Shuntaro, Lu, Yi-Hsien, Hohman, J. Nathan, Maitani, Masato M., Salmeron, Miquel, and Wada, Yuji. Controlling the Schottky Barrier at the Pt/TiO2 Interface by Intercalation of a Self-Assembled Monolayer with Oriented Dipole Moments. United States: N. p., 2021.
Web. doi:10.1021/acs.jpcc.1c00993.
Ano, Taishi, Kishimoto, Fuminao, Tsubaki, Shuntaro, Lu, Yi-Hsien, Hohman, J. Nathan, Maitani, Masato M., Salmeron, Miquel, & Wada, Yuji. Controlling the Schottky Barrier at the Pt/TiO2 Interface by Intercalation of a Self-Assembled Monolayer with Oriented Dipole Moments. United States. https://doi.org/10.1021/acs.jpcc.1c00993
Ano, Taishi, Kishimoto, Fuminao, Tsubaki, Shuntaro, Lu, Yi-Hsien, Hohman, J. Nathan, Maitani, Masato M., Salmeron, Miquel, and Wada, Yuji. Sun .
"Controlling the Schottky Barrier at the Pt/TiO2 Interface by Intercalation of a Self-Assembled Monolayer with Oriented Dipole Moments". United States. https://doi.org/10.1021/acs.jpcc.1c00993. https://www.osti.gov/servlets/purl/1844529.
@article{osti_1844529,
title = {Controlling the Schottky Barrier at the Pt/TiO2 Interface by Intercalation of a Self-Assembled Monolayer with Oriented Dipole Moments},
author = {Ano, Taishi and Kishimoto, Fuminao and Tsubaki, Shuntaro and Lu, Yi-Hsien and Hohman, J. Nathan and Maitani, Masato M. and Salmeron, Miquel and Wada, Yuji},
abstractNote = {Interfacial Schottky barriers can impact the catalytic function of Pt on TiO2. Since the electronic structure is characteristic of each material, it may be advantageous to tailor the interfacial Schottky barrier by the addition of adsorbed layers. Here, we show that the Schottky barrier in Pt/TiO2 can be mitigated by the insertion of self-assembled monolayers (SAM) of carboranethiols that possess an oriented dipole moment. A Pt substrate with the SAM on which TiO2 nanoparticles are deposited is used to that effect. Kelvin Probe Force Microscopy shows thatm-9-carboranethiolate SAM with perpendicular dipole moments decreases the potential difference between TiO2 and Pt by ~0.3 eV due to the interfacial electric field of the SAM. Furthermore, our findings open new opportunities for tailoring interfacial electronic structures not only in the metal-semiconductor junction, but also the semiconductor heterojunctions.},
doi = {10.1021/acs.jpcc.1c00993},
journal = {Journal of Physical Chemistry. C},
number = 25,
volume = 125,
place = {United States},
year = {Sun Jun 20 00:00:00 EDT 2021},
month = {Sun Jun 20 00:00:00 EDT 2021}
}
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