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Title: Inhomogeneous barrier heights at dipole-controlled SrRuO 3/Nb:SrTiO 3 Schottky junctions

Abstract

It has recently been shown that the Schottky barrier height (SBH) formed at metal-semiconductor perovskite oxide heterojunctions can be dramatically tuned by the insertion of atomic-scale dipole layers at the interface. However, in idealized form, this would only allow for specific values of the SBH, discretized by the dipole layer thickness. We examine the effect of fractional unit cell LaAlO 3 dipoles inserted between SrRuO 3 and Nb:SrTiO 3 in (001) Schottky junctions, as a function of their in-plane lateral distribution. When the LaAlO 3 dipoles are finely dispersed, we observe uniformly rectifying junctions, with SBHs reflecting the fractional LaAlO 3 coverage. For larger length-scale distributions, the junction characteristics reflect the inhomogeneous combination of regions with and without the interface dipole. The characteristic length scale dividing the two regimes corresponds to the semiconductor depletion width scaled by the dipole potential, determining the effective scale for which the SBH can be continuously tuned.

Authors:
 [1]; ORCiD logo [2];  [3];  [4];  [5]
  1. Univ. of Tokyo (Japan). Dept. of Materials Engineering; SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Inst. for Materials and Energy Sciences
  2. SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Inst. for Materials and Energy Sciences; National Inst. of Advanced Industrial Science and Technology (AIST), Tsukuba (Japan). Electronics and Photonics Research Inst.
  3. SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Inst. for Materials and Energy Sciences; Univ. of Bristol (United Kingdom). H. H. Wills Physics Lab.
  4. SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Inst. for Materials and Energy Sciences; Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials. Dept. of Applied Physics
  5. SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Inst. for Materials and Energy Sciences
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1490455
Grant/Contract Number:  
AC02-76SF00515
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 113; Journal Issue: 22; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Ohmic contacts; heterostructures; semiconductors; thin films; transition metal oxides; thermionic emission; I-V characteristics; electronic bandstructure; Schottky barriers; perovskites

Citation Formats

Yajima, T., Minohara, M., Bell, C., Hwang, H. Y., and Hikita, Y. Inhomogeneous barrier heights at dipole-controlled SrRuO3/Nb:SrTiO3 Schottky junctions. United States: N. p., 2018. Web. doi:10.1063/1.5052712.
Yajima, T., Minohara, M., Bell, C., Hwang, H. Y., & Hikita, Y. Inhomogeneous barrier heights at dipole-controlled SrRuO3/Nb:SrTiO3 Schottky junctions. United States. doi:10.1063/1.5052712.
Yajima, T., Minohara, M., Bell, C., Hwang, H. Y., and Hikita, Y. Wed . "Inhomogeneous barrier heights at dipole-controlled SrRuO3/Nb:SrTiO3 Schottky junctions". United States. doi:10.1063/1.5052712.
@article{osti_1490455,
title = {Inhomogeneous barrier heights at dipole-controlled SrRuO3/Nb:SrTiO3 Schottky junctions},
author = {Yajima, T. and Minohara, M. and Bell, C. and Hwang, H. Y. and Hikita, Y.},
abstractNote = {It has recently been shown that the Schottky barrier height (SBH) formed at metal-semiconductor perovskite oxide heterojunctions can be dramatically tuned by the insertion of atomic-scale dipole layers at the interface. However, in idealized form, this would only allow for specific values of the SBH, discretized by the dipole layer thickness. We examine the effect of fractional unit cell LaAlO3 dipoles inserted between SrRuO3 and Nb:SrTiO3 in (001) Schottky junctions, as a function of their in-plane lateral distribution. When the LaAlO3 dipoles are finely dispersed, we observe uniformly rectifying junctions, with SBHs reflecting the fractional LaAlO3 coverage. For larger length-scale distributions, the junction characteristics reflect the inhomogeneous combination of regions with and without the interface dipole. The characteristic length scale dividing the two regimes corresponds to the semiconductor depletion width scaled by the dipole potential, determining the effective scale for which the SBH can be continuously tuned.},
doi = {10.1063/1.5052712},
journal = {Applied Physics Letters},
number = 22,
volume = 113,
place = {United States},
year = {2018},
month = {11}
}

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Works referenced in this record:

Ferroelectric Ceramics: History and Technology
journal, April 1999