Floquet band engineering and topological phase transitions in 1T’ transition metal dichalcogenides
Abstract
Using ab initio tight-binding approaches, we investigate Floquet band engineering of the 1T' phase of transition metal dichalcogenides (MX2, M = W, Mo and X = Te, Se, S) monolayers under the irradiation with circularly polarized light. Furthermore, our first principles calculations demonstrate that light can induce important transitions in the topological phases of this emerging materials family. For example, upon irradiation, Te-based MX2 undergoes a phase transition from quantum spin Hall (QSH) semimetal to time-reversal symmetry broken QSH insulator with a nontrivial band gap of up to 92.5 meV. On the other hand, Se- and S-based MX2 undergoes the topological phase transition from the QSH effect to the quantum anomalous Hall effect and into trivial phases with increasing light intensity. From a general perspective, this theoretical work brings further insight into non-equilibrium topological systems.
- Authors:
-
[1];
[1];
[2];
[1];
[1];
[1]
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Hebei Univ. of Technology, Tianjin (China)
- Publication Date:
- Research Org.:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1843708
- Grant/Contract Number:
- AC05-00OR22725
- Resource Type:
- Accepted Manuscript
- Journal Name:
- 2D Materials
- Additional Journal Information:
- Journal Volume: 9; Journal Issue: 2; Journal ID: ISSN 2053-1583
- Publisher:
- IOP Publishing
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Floquet engineering; topological phase transitions; transition metal dichalcogenides; quantum spin Hall; quantum anomalous Hall
Citation Formats
Kong, Xiangru, Luo, Wei, Li, Linyang, Yoon, Mina, Berlijn, Tom, and Liang, Liangbo. Floquet band engineering and topological phase transitions in 1T’ transition metal dichalcogenides. United States: N. p., 2022.
Web. doi:10.1088/2053-1583/ac4957.
Kong, Xiangru, Luo, Wei, Li, Linyang, Yoon, Mina, Berlijn, Tom, & Liang, Liangbo. Floquet band engineering and topological phase transitions in 1T’ transition metal dichalcogenides. United States. https://doi.org/10.1088/2053-1583/ac4957
Kong, Xiangru, Luo, Wei, Li, Linyang, Yoon, Mina, Berlijn, Tom, and Liang, Liangbo. Mon .
"Floquet band engineering and topological phase transitions in 1T’ transition metal dichalcogenides". United States. https://doi.org/10.1088/2053-1583/ac4957. https://www.osti.gov/servlets/purl/1843708.
@article{osti_1843708,
title = {Floquet band engineering and topological phase transitions in 1T’ transition metal dichalcogenides},
author = {Kong, Xiangru and Luo, Wei and Li, Linyang and Yoon, Mina and Berlijn, Tom and Liang, Liangbo},
abstractNote = {Using ab initio tight-binding approaches, we investigate Floquet band engineering of the 1T' phase of transition metal dichalcogenides (MX2, M = W, Mo and X = Te, Se, S) monolayers under the irradiation with circularly polarized light. Furthermore, our first principles calculations demonstrate that light can induce important transitions in the topological phases of this emerging materials family. For example, upon irradiation, Te-based MX2 undergoes a phase transition from quantum spin Hall (QSH) semimetal to time-reversal symmetry broken QSH insulator with a nontrivial band gap of up to 92.5 meV. On the other hand, Se- and S-based MX2 undergoes the topological phase transition from the QSH effect to the quantum anomalous Hall effect and into trivial phases with increasing light intensity. From a general perspective, this theoretical work brings further insight into non-equilibrium topological systems.},
doi = {10.1088/2053-1583/ac4957},
journal = {2D Materials},
number = 2,
volume = 9,
place = {United States},
year = {Mon Jan 31 00:00:00 EST 2022},
month = {Mon Jan 31 00:00:00 EST 2022}
}
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