Floquet engineering of tilted and gapped Dirac bandstructure in 1T$$$$^\prime$$$$-MoS$$$$_2$$$$
Abstract
Abstract We have developed a rigorous theoretical formalism for Floquet engineering, investigating, and subsequently tailoring most crucial electronic properties of 1T $$$$^\prime$$$$ -MoS $$$$_2$$$$ by applying an external high-frequency dressing field within the off-resonance regime. It was recently demonstrated that monolayer semiconducting 1T $$$$^\prime$$$$ -MoS $$$$_2$$$$ exhibits tunable and gapped spin- and valley-polarized tilted Dirac bands. The electron-photon dressed states depend strongly on the polarization of the applied irradiation and reflect a full complexity of the low-energy Hamiltonian for non-irradiated material. We have calculated and analyzed the properties of the electron dressed states corresponding to linear and circular polarization of a dressing field by focusing on their symmetry, anisotropy, tilting, direct and indirect band gaps. Circularly polarized dressing field is known for transition into a new electronic state with broken time-reversal symmetry and a non-zero Chern number, and therefore, the combination of these topologically non-trivial phases and transitions between them could reveal some truly unique and previously unknown phenomena and applications. We have also computed and discussed the density of states for various types of 1T $$$$^\prime$$$$ -MoS $$$$_2$$$$ materials and its modification in the presence of a dressing field.
- Authors:
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1902775
- Grant/Contract Number:
- SC0019326
- Resource Type:
- Published Article
- Journal Name:
- Scientific Reports
- Additional Journal Information:
- Journal Name: Scientific Reports Journal Volume: 12 Journal Issue: 1; Journal ID: ISSN 2045-2322
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United Kingdom
- Language:
- English
Citation Formats
Iurov, Andrii, Zhemchuzhna, Liubov, Gumbs, Godfrey, Huang, Danhong, Tse, Wang-Kong, Blaise, Kathy, and Ejiogu, Chinedu. Floquet engineering of tilted and gapped Dirac bandstructure in 1T$$^\prime$$-MoS$$_2$$. United Kingdom: N. p., 2022.
Web. doi:10.1038/s41598-022-25898-5.
Iurov, Andrii, Zhemchuzhna, Liubov, Gumbs, Godfrey, Huang, Danhong, Tse, Wang-Kong, Blaise, Kathy, & Ejiogu, Chinedu. Floquet engineering of tilted and gapped Dirac bandstructure in 1T$$^\prime$$-MoS$$_2$$. United Kingdom. https://doi.org/10.1038/s41598-022-25898-5
Iurov, Andrii, Zhemchuzhna, Liubov, Gumbs, Godfrey, Huang, Danhong, Tse, Wang-Kong, Blaise, Kathy, and Ejiogu, Chinedu. Fri .
"Floquet engineering of tilted and gapped Dirac bandstructure in 1T$$^\prime$$-MoS$$_2$$". United Kingdom. https://doi.org/10.1038/s41598-022-25898-5.
@article{osti_1902775,
title = {Floquet engineering of tilted and gapped Dirac bandstructure in 1T$$^\prime$$-MoS$$_2$$},
author = {Iurov, Andrii and Zhemchuzhna, Liubov and Gumbs, Godfrey and Huang, Danhong and Tse, Wang-Kong and Blaise, Kathy and Ejiogu, Chinedu},
abstractNote = {Abstract We have developed a rigorous theoretical formalism for Floquet engineering, investigating, and subsequently tailoring most crucial electronic properties of 1T $$^\prime$$ ′ -MoS $$_2$$ 2 by applying an external high-frequency dressing field within the off-resonance regime. It was recently demonstrated that monolayer semiconducting 1T $$^\prime$$ ′ -MoS $$_2$$ 2 exhibits tunable and gapped spin- and valley-polarized tilted Dirac bands. The electron-photon dressed states depend strongly on the polarization of the applied irradiation and reflect a full complexity of the low-energy Hamiltonian for non-irradiated material. We have calculated and analyzed the properties of the electron dressed states corresponding to linear and circular polarization of a dressing field by focusing on their symmetry, anisotropy, tilting, direct and indirect band gaps. Circularly polarized dressing field is known for transition into a new electronic state with broken time-reversal symmetry and a non-zero Chern number, and therefore, the combination of these topologically non-trivial phases and transitions between them could reveal some truly unique and previously unknown phenomena and applications. We have also computed and discussed the density of states for various types of 1T $$^\prime$$ ′ -MoS $$_2$$ 2 materials and its modification in the presence of a dressing field.},
doi = {10.1038/s41598-022-25898-5},
journal = {Scientific Reports},
number = 1,
volume = 12,
place = {United Kingdom},
year = {Fri Dec 09 00:00:00 EST 2022},
month = {Fri Dec 09 00:00:00 EST 2022}
}
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