Low-Resistance, High-Yield Electrical Contacts to Atom Scale Si:P Devices Using Palladium Silicide

Schmucker, Scott W.; Namboodiri, Pradeep N.; Kashid, Ranjit; Wang, Xiqiao; Hu, Binhui; Wyrick, Jonathan E.; Myers, Alline F.; Schumacher, Joshua D.; Silver, Richard M.; Stewart, Jr., M. D.

doi:10.1103/physrevapplied.11.034071

Title: Low-Resistance, High-Yield Electrical Contacts to Atom Scale Si:P Devices Using Palladium Silicide

Abstract

Scanning tunneling microscopy (STM) enables the fabrication of two-dimensional δ-doped structures in Si with atomistic precision, with applications from tunnel field-effect transistors to qubits. The combination of a very small contact area and the restrictive thermal budget necessary to maintain the integrity of the δ layer make developing a robust electrical contact method a significant challenge to realizing the potential of atomically precise devices. We demonstrate a method for electrical contact using Pd₂Si formed at the temperature of silicon overgrowth (250 °C), minimizing the diffusive impact on the δ layer. Here, we use the transfer length method to show our Pd₂Si contacts have very high yield (99.7% +0.2% –1.5%) and low resistivity (272 ± 41 Ω μm) in contacting mesa-etched Si:P δ layers. We also present three terminal measurements of low contact resistance (<1 kΩ) to devices written by STM hydrogen depassivation lithography with similarly high yield (100% +0% –3.2%).

Authors:

Schmucker, Scott W. ^[1]; Namboodiri, Pradeep N. ^[2]; Kashid, Ranjit ^[2]; Wang, Xiqiao ^[1]; Hu, Binhui ^[1]; Wyrick, Jonathan E. ^[2]; Myers, Alline F. ^[2]; Schumacher, Joshua D. ^[2]; Silver, Richard M. ^[2]; Stewart, Jr., M. D. ^[2]

Univ. of Maryland, College Park, MD (United States)
National Inst. of Standards and Technology (NIST), Gaithersburg, MD (United States)

Publication Date:: Fri Mar 29 00:00:00 EDT 2019

Research Org.:: Zyvex Labs, LLC, Richardson, TX (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1842444

Grant/Contract Number:: EE0008311

Resource Type:: Accepted Manuscript

Journal Name:: Physical Review Applied

Additional Journal Information:: Journal Volume: 11; Journal Issue: 3; Journal ID: ISSN 2331-7019

Publisher:: American Physical Society (APS)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; Electrical conductivity; Quantum transport; 2-dimensional systems; Devices; Doped semiconductors; Nanostructures; Sample preparation; Scanning tunneling microscopy

Citation Formats


                    Schmucker, Scott W., Namboodiri, Pradeep N., Kashid, Ranjit, Wang, Xiqiao, Hu, Binhui, Wyrick, Jonathan E., Myers, Alline F., Schumacher, Joshua D., Silver, Richard M., and Stewart, Jr., M. D. Low-Resistance, High-Yield Electrical Contacts to Atom Scale Si:P Devices Using Palladium Silicide.  United States: N. p., 2019. 
Web.  doi:10.1103/physrevapplied.11.034071.

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                    Schmucker, Scott W., Namboodiri, Pradeep N., Kashid, Ranjit, Wang, Xiqiao, Hu, Binhui, Wyrick, Jonathan E., Myers, Alline F., Schumacher, Joshua D., Silver, Richard M., & Stewart, Jr., M. D. Low-Resistance, High-Yield Electrical Contacts to Atom Scale Si:P Devices Using Palladium Silicide.  United States.  https://doi.org/10.1103/physrevapplied.11.034071

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                    Schmucker, Scott W., Namboodiri, Pradeep N., Kashid, Ranjit, Wang, Xiqiao, Hu, Binhui, Wyrick, Jonathan E., Myers, Alline F., Schumacher, Joshua D., Silver, Richard M., and Stewart, Jr., M. D. Fri .  
"Low-Resistance, High-Yield Electrical Contacts to Atom Scale Si:P Devices Using Palladium Silicide".  United States.  https://doi.org/10.1103/physrevapplied.11.034071.  https://www.osti.gov/servlets/purl/1842444.

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@article{osti_1842444,

  title        = {Low-Resistance, High-Yield Electrical Contacts to Atom Scale Si:P Devices Using Palladium Silicide},

  author       = {Schmucker, Scott W. and Namboodiri, Pradeep N. and Kashid, Ranjit and Wang, Xiqiao and Hu, Binhui and Wyrick, Jonathan E. and Myers, Alline F. and Schumacher, Joshua D. and Silver, Richard M. and Stewart, Jr., M. D.},

  abstractNote = {Scanning tunneling microscopy (STM) enables the fabrication of two-dimensional δ-doped structures in Si with atomistic precision, with applications from tunnel field-effect transistors to qubits. The combination of a very small contact area and the restrictive thermal budget necessary to maintain the integrity of the δ layer make developing a robust electrical contact method a significant challenge to realizing the potential of atomically precise devices. We demonstrate a method for electrical contact using Pd2Si formed at the temperature of silicon overgrowth (250 °C), minimizing the diffusive impact on the δ layer. Here, we use the transfer length method to show our Pd2Si contacts have very high yield (99.7% +0.2% –1.5%) and low resistivity (272 ± 41 Ω μm) in contacting mesa-etched Si:P δ layers. We also present three terminal measurements of low contact resistance (<1 kΩ) to devices written by STM hydrogen depassivation lithography with similarly high yield (100% +0% –3.2%).},

  doi          = {10.1103/physrevapplied.11.034071},

  journal      = {Physical Review Applied},

  number       = 3,

  volume       = 11,

  place        = {United States},

  year         = {Fri Mar 29 00:00:00 EDT 2019},

  month        = {Fri Mar 29 00:00:00 EDT 2019}

}

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Works referencing / citing this record:

Atom‐by‐Atom Fabrication of Single and Few Dopant Quantum Devices
journal, August 2019

Wyrick, Jonathan; Wang, Xiqiao; Kashid, Ranjit V.
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Similar Records

Title: Low-Resistance, High-Yield Electrical Contacts to Atom Scale Si:P Devices Using Palladium Silicide

Abstract

Citation Formats

High resolution thickness measurements of ultrathin Si:P monolayers using weak localization journal, January 2018

Kinetics of platinum silicide formation during rapid thermal processing journal, September 1992

Nanoscale patterning and oxidation of H‐passivated Si(100)‐2×1 surfaces with an ultrahigh vacuum scanning tunneling microscope journal, April 1994

Pile up of implanted phosphorus during palladium silicide formation and the characteristics of Schottky barrier diodes journal, July 1983

The Impact of Dopant Segregation on the Maximum Carrier Density in Si:P Multilayers journal, June 2015

Towards superconductivity in p-type delta-doped Si/Al/Si heterostructures journal, July 2018

Scanning probe microscopy for silicon device fabrication journal, May 2005

Josephson junction arrays on the basis of superconducting PtSi films journal, May 2003

Thermal dissociation and desorption of P H 3 on Si(001): A reinterpretation of spectroscopic data journal, November 2006

Multimode hydrogen depassivation lithography: A method for optimizing atomically precise write times journal, November 2013

All-optical lithography process for contacting nanometer precision donor devices journal, November 2017

Atomically Precise Placement of Single Dopants in Si journal, September 2003

Exchange in Silicon-Based Quantum Computer Architecture journal, December 2001

Transmission electron microscopy and X-ray diffraction investigation of phase formation and transition between Pd2Si and PdSi in Pd thin films on (111)Si journal, January 1995

Review of binary alloy formation by thin film interactions journal, September 1979

A single-atom transistor journal, February 2012

Kinetics of silicides on Si〈100〉 and evaporated silicon substrates journal, September 1986

Self-aligned silicides or metals for very large scale integrated circuit applications journal, November 1986

Controlled formation of atomic step morphology on micropatterned Si (100) journal, July 2011

Bloch-Boltzmann analysis of electrical transport in intermetallic compounds: ReO 3 , BaPbO 3 , CoSi 2 , and Pd 2 Si journal, June 1993

Quantifying atom-scale dopant movement and electrical activation in Si:P monolayers journal, January 2018

Silicon epitaxy on H-terminated Si (100) surfaces at 250 °C journal, August 2016

Hollow nanostructures based on the Kirkendall effect: Design and stability considerations journal, February 2005

Two‐dimensional surface dopant profiling in silicon using scanning Kelvin probe microscopy journal, March 1995

One-Dimensional Electrical Contact to a Two-Dimensional Material journal, October 2013

Toward Atomic-Scale Device Fabrication in Silicon Using Scanning Probe Microscopy journal, October 2004

Scanning capacitance microscopy registration of buried atomic-precision donor devices journal, February 2015

Field-directed sputter sharpening for tailored probe materials and atomic-scale lithography journal, January 2012

STM patterned nanowire measurements using photolithographically defined implants in Si(100) journal, January 2018

The pdsi (palladiumsilicon) system journal, June 1991

An X-Ray Study of Domain Structure and Stress in Pd 2 Si Films at Pd-Si Interfaces journal, January 1981

Comparison of nickel silicide and aluminium ohmic contact metallizations for low-temperature quantum transport measurements journal, October 2011

Atomic precision lithography on Si journal, January 2009

Metal Silicides in CMOS Technology: Past, Present, and Future Trends journal, November 2003

PtSi Clustering in Silicon Probed by Transport Spectroscopy journal, December 2013

Metal silicides: An integral part of microelectronics journal, September 2005

Silicon quantum electronics journal, July 2013

The Effects of Interfacial SiO2 on Pd2Si Formation journal, June 1983

Selective growth of metal‐rich silicide of near‐noble metals journal, August 1975

Atom‐by‐Atom Fabrication of Single and Few Dopant Quantum Devices journal, August 2019

High resolution thickness measurements of ultrathin Si:P monolayers using weak localization
journal, January 2018

Kinetics of platinum silicide formation during rapid thermal processing
journal, September 1992

Nanoscale patterning and oxidation of H‐passivated Si(100)‐2×1 surfaces with an ultrahigh vacuum scanning tunneling microscope
journal, April 1994

Pile up of implanted phosphorus during palladium silicide formation and the characteristics of Schottky barrier diodes
journal, July 1983

The Impact of Dopant Segregation on the Maximum Carrier Density in Si:P Multilayers
journal, June 2015

Towards superconductivity in p-type delta-doped Si/Al/Si heterostructures
journal, July 2018

Scanning probe microscopy for silicon device fabrication
journal, May 2005

Josephson junction arrays on the basis of superconducting PtSi films
journal, May 2003

Thermal dissociation and desorption of $P H_{3}$ on Si(001): A reinterpretation of spectroscopic data
journal, November 2006

Multimode hydrogen depassivation lithography: A method for optimizing atomically precise write times
journal, November 2013

All-optical lithography process for contacting nanometer precision donor devices
journal, November 2017

Atomically Precise Placement of Single Dopants in Si
journal, September 2003

Exchange in Silicon-Based Quantum Computer Architecture
journal, December 2001

Transmission electron microscopy and X-ray diffraction investigation of phase formation and transition between Pd2Si and PdSi in Pd thin films on (111)Si
journal, January 1995

Review of binary alloy formation by thin film interactions
journal, September 1979

A single-atom transistor
journal, February 2012

Kinetics of silicides on Si〈100〉 and evaporated silicon substrates
journal, September 1986

Self-aligned silicides or metals for very large scale integrated circuit applications
journal, November 1986

Controlled formation of atomic step morphology on micropatterned Si (100)
journal, July 2011

Bloch-Boltzmann analysis of electrical transport in intermetallic compounds: ${ReO}_{3}$ , ${BaPbO}_{3}$ , ${CoSi}_{2}$ , and ${Pd}_{2}$ Si
journal, June 1993

Quantifying atom-scale dopant movement and electrical activation in Si:P monolayers
journal, January 2018

Silicon epitaxy on H-terminated Si (100) surfaces at 250 °C
journal, August 2016

Hollow nanostructures based on the Kirkendall effect: Design and stability considerations
journal, February 2005

Two‐dimensional surface dopant profiling in silicon using scanning Kelvin probe microscopy
journal, March 1995

One-Dimensional Electrical Contact to a Two-Dimensional Material
journal, October 2013

Toward Atomic-Scale Device Fabrication in Silicon Using Scanning Probe Microscopy
journal, October 2004

Scanning capacitance microscopy registration of buried atomic-precision donor devices
journal, February 2015

Field-directed sputter sharpening for tailored probe materials and atomic-scale lithography
journal, January 2012

STM patterned nanowire measurements using photolithographically defined implants in Si(100)
journal, January 2018

The pdsi (palladiumsilicon) system
journal, June 1991

An X-Ray Study of Domain Structure and Stress in Pd ₂ Si Films at Pd-Si Interfaces
journal, January 1981

Comparison of nickel silicide and aluminium ohmic contact metallizations for low-temperature quantum transport measurements
journal, October 2011

Atomic precision lithography on Si
journal, January 2009

Metal Silicides in CMOS Technology: Past, Present, and Future Trends
journal, November 2003

PtSi Clustering in Silicon Probed by Transport Spectroscopy
journal, December 2013

Metal silicides: An integral part of microelectronics
journal, September 2005

Silicon quantum electronics
journal, July 2013

The Effects of Interfacial SiO2 on Pd2Si Formation
journal, June 1983

Selective growth of metal‐rich silicide of near‐noble metals
journal, August 1975

Atom‐by‐Atom Fabrication of Single and Few Dopant Quantum Devices
journal, August 2019