Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques

Katzenmeyer, Aaron M.; Dmitrovic, Sanja; Baczewski, Andrew D.; Campbell, Quinn; Bussmann, Ezra; Lu, Tzu-Ming; Anderson, Evan M.; Schmucker, Scott W.; Ivie, Jeffrey A.; Campbell, Deanna M.; Ward, Daniel R.; Scrymgeour, David A.; Wang, George T.; Misra, Shashank

doi:10.1117/1.jmm.20.1.014901

Title: Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques

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Abstract

The attachment of dopant precursor molecules to depassivated areas of hydrogen-terminated silicon templated with a scanning tunneling microscope (STM) has been used to create electronic devices with subnanometer precision, typically for quantum physics experiments. This process, which we call atomic precision advanced manufacturing (APAM), dopes silicon beyond the solid-solubility limit and produces electrical and optical characteristics that may also be useful for microelectronic and plasmonic applications. However, scanned probe lithography lacks the throughput required to develop more sophisticated applications. In this work, we demonstrate and characterize an APAM device workflow where scanned probe lithography of the atomic layer resist has been replaced by photolithography. An ultraviolet laser is shown to locally and controllably heat silicon above the temperature required for hydrogen depassivation on a nanosecond timescale, a process resistant to under- and overexposure. STM images indicate a narrow range of energy density where the surface is both depassivated and undamaged. Modeling that accounts for photothermal heating and the subsequent hydrogen desorption kinetics suggests that the silicon surface temperatures reached in our patterning process exceed those required for hydrogen removal in temperature-programmed desorption experiments. A phosphorus-doped van der Pauw structure made by sequentially photodepassivating a predefined area and then exposing itmore »« less

Authors:

^[1]; Dmitrovic, Sanja ^[2];

^[1]; Campbell, Quinn ^[1];

^[1]; Lu, Tzu-Ming ^[1];

^[1];

^[1]; Ivie, Jeffrey A. ^[1]; Campbell, Deanna M. ^[1]; Ward, Daniel R. ^[1]; Scrymgeour, David A. ^[1]; Wang, George T. ^[1]; Misra, Shashank ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Univ. of Arizona, Tucson, AZ (United States)

Publication Date:: Sat Mar 06 00:00:00 EST 2021

Research Org.:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies (CINT)

Sponsoring Org.:: USDOE National Nuclear Security Administration (NNSA); USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1772029

Report Number(s):: SAND-2021-2816J
Journal ID: ISSN 2708-8340; 694658

Grant/Contract Number:: AC04-94AL85000; NA0003525

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Micro/Nanopatterning, Materials, and Metrology

Additional Journal Information:: Journal Volume: 20; Journal Issue: 01; Journal ID: ISSN 2708-8340

Publisher:: SPIE

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; photolithography; photothermal effects; hydrogen lithography; surface morphology; nanoscale devices; scanned probe lithography

Citation Formats


                    Katzenmeyer, Aaron M., Dmitrovic, Sanja, Baczewski, Andrew D., Campbell, Quinn, Bussmann, Ezra, Lu, Tzu-Ming, Anderson, Evan M., Schmucker, Scott W., Ivie, Jeffrey A., Campbell, Deanna M., Ward, Daniel R., Scrymgeour, David A., Wang, George T., and Misra, Shashank. Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques.  United States: N. p., 2021. 
Web.  doi:10.1117/1.jmm.20.1.014901.

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                    Katzenmeyer, Aaron M., Dmitrovic, Sanja, Baczewski, Andrew D., Campbell, Quinn, Bussmann, Ezra, Lu, Tzu-Ming, Anderson, Evan M., Schmucker, Scott W., Ivie, Jeffrey A., Campbell, Deanna M., Ward, Daniel R., Scrymgeour, David A., Wang, George T., & Misra, Shashank. Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques.  United States.  https://doi.org/10.1117/1.jmm.20.1.014901

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                    Katzenmeyer, Aaron M., Dmitrovic, Sanja, Baczewski, Andrew D., Campbell, Quinn, Bussmann, Ezra, Lu, Tzu-Ming, Anderson, Evan M., Schmucker, Scott W., Ivie, Jeffrey A., Campbell, Deanna M., Ward, Daniel R., Scrymgeour, David A., Wang, George T., and Misra, Shashank. Sat .  
"Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques".  United States.  https://doi.org/10.1117/1.jmm.20.1.014901.  https://www.osti.gov/servlets/purl/1772029.

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@article{osti_1772029,

  title        = {Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques},

  author       = {Katzenmeyer, Aaron M. and Dmitrovic, Sanja and Baczewski, Andrew D. and Campbell, Quinn and Bussmann, Ezra and Lu, Tzu-Ming and Anderson, Evan M. and Schmucker, Scott W. and Ivie, Jeffrey A. and Campbell, Deanna M. and Ward, Daniel R. and Scrymgeour, David A. and Wang, George T. and Misra, Shashank},

  abstractNote = {The attachment of dopant precursor molecules to depassivated areas of hydrogen-terminated silicon templated with a scanning tunneling microscope (STM) has been used to create electronic devices with subnanometer precision, typically for quantum physics experiments. This process, which we call atomic precision advanced manufacturing (APAM), dopes silicon beyond the solid-solubility limit and produces electrical and optical characteristics that may also be useful for microelectronic and plasmonic applications. However, scanned probe lithography lacks the throughput required to develop more sophisticated applications. In this work, we demonstrate and characterize an APAM device workflow where scanned probe lithography of the atomic layer resist has been replaced by photolithography. An ultraviolet laser is shown to locally and controllably heat silicon above the temperature required for hydrogen depassivation on a nanosecond timescale, a process resistant to under- and overexposure. STM images indicate a narrow range of energy density where the surface is both depassivated and undamaged. Modeling that accounts for photothermal heating and the subsequent hydrogen desorption kinetics suggests that the silicon surface temperatures reached in our patterning process exceed those required for hydrogen removal in temperature-programmed desorption experiments. A phosphorus-doped van der Pauw structure made by sequentially photodepassivating a predefined area and then exposing it to phosphine is found to have a similar mobility and higher carrier density compared with devices patterned by STM. Lastly, it is also demonstrated that photodepassivation and precursor exposure steps may be performed concomitantly, a potential route to enabling APAM outside of ultrahigh vacuum.},

  doi          = {10.1117/1.jmm.20.1.014901},

  journal      = {Journal of Micro/Nanopatterning, Materials, and Metrology},

  number       = 01,

  volume       = 20,

  place        = {United States},

  year         = {Sat Mar 06 00:00:00 EST 2021},

  month        = {Sat Mar 06 00:00:00 EST 2021}

}

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