High-power narrow spectrum GaSb-based DBR lasers emitting near 2.1 µm
Abstract
Stable high-power narrow-linewidth operation of the 2.05–2.1 µm GaSb-based diode lasers was achieved by utilizing the sixth-order surface-etched distributed Bragg reflector (DBR) mirrors. The DBR multimode devices with 100 µm wide ridge waveguides generated in the continuous wave (CW) regime at 20°C. The device CW output power was limited by thermal rollover. The laser emission spectrum was defined by Bragg reflector reflectivity at all operating currents in a wide temperature range. The devices operated at DBR line with detuning from gain peak exceeding 10 meV.
- Authors:
-
[2];
[3];
- State Univ. of New York (SUNY), Stony Brook, NY (United States)
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Texas A & M Univ., College Station, TX (United States)
- Publication Date:
- Research Org.:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); US Army Research Office (ARO)
- OSTI Identifier:
- 1830201
- Alternate Identifier(s):
- OSTI ID: 1777509
- Report Number(s):
- BNL-222377-2021-JAAM
Journal ID: ISSN 0146-9592
- Grant/Contract Number:
- SC0012704; ECCS-1707317US; W911-NF1810057
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Optics Letters
- Additional Journal Information:
- Journal Volume: 46; Journal Issue: 8; Journal ID: ISSN 0146-9592
- Publisher:
- Optical Society of America (OSA)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 77 NANOSCIENCE AND NANOTECHNOLOGY
Citation Formats
Jiang, Jiang, Shterengas, Leon, Kipshidze, Gela, Stein, Aaron, Belyanin, Alexey, and Belenky, Gregory. High-power narrow spectrum GaSb-based DBR lasers emitting near 2.1 µm. United States: N. p., 2021.
Web. doi:10.1364/ol.422536.
Jiang, Jiang, Shterengas, Leon, Kipshidze, Gela, Stein, Aaron, Belyanin, Alexey, & Belenky, Gregory. High-power narrow spectrum GaSb-based DBR lasers emitting near 2.1 µm. United States. https://doi.org/10.1364/ol.422536
Jiang, Jiang, Shterengas, Leon, Kipshidze, Gela, Stein, Aaron, Belyanin, Alexey, and Belenky, Gregory. Thu .
"High-power narrow spectrum GaSb-based DBR lasers emitting near 2.1 µm". United States. https://doi.org/10.1364/ol.422536. https://www.osti.gov/servlets/purl/1830201.
@article{osti_1830201,
title = {High-power narrow spectrum GaSb-based DBR lasers emitting near 2.1 µm},
author = {Jiang, Jiang and Shterengas, Leon and Kipshidze, Gela and Stein, Aaron and Belyanin, Alexey and Belenky, Gregory},
abstractNote = {Stable high-power narrow-linewidth operation of the 2.05–2.1 µm GaSb-based diode lasers was achieved by utilizing the sixth-order surface-etched distributed Bragg reflector (DBR) mirrors. The DBR multimode devices with 100 µm wide ridge waveguides generated ∼ <#comment/> 850 m W in the continuous wave (CW) regime at 20°C. The device CW output power was limited by thermal rollover. The laser emission spectrum was defined by Bragg reflector reflectivity at all operating currents in a wide temperature range. The devices operated at DBR line with detuning from gain peak exceeding 10 meV.},
doi = {10.1364/ol.422536},
journal = {Optics Letters},
number = 8,
volume = 46,
place = {United States},
year = {Thu Apr 15 00:00:00 EDT 2021},
month = {Thu Apr 15 00:00:00 EDT 2021}
}
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