Sierpinski Structure and Electronic Topology in Bi Thin Films on InSb(111)B Surfaces
Abstract
Deposition of Bi on InSb(111)B reveals a striking Sierpinski-triangle (ST)-like structure in Bi thin films. Such a fractal geometric topology is further shown to turn off the intrinsic electronic topology in a thin film. Relaxation of a huge misfit strain of about 30 to 40% between Bi adlayer and substrate is revealed to drive the ST-like island formation. A Frenkel-Kontrova model is developed to illustrate the enhanced strain relief in the ST islands offsetting the additional step energy cost. Besides a sufficiently large tensile strain, forming ST-like structures also requires larger adlayer-substrate and intra-adlayer elastic stiffnesses, and weaker intra-adlayer interatomic interactions.
- Authors:
-
[4];
[4];
[1]
- Shanghai Jiao Tong Univ. (China)
- Univ. of Utah, Salt Lake City, UT (United States)
- Southern Univ. of Science and Technology, Shenzen (China)
- Iowa State Univ., Ames, IA (United States); Ames Lab., Ames, IA (United States)
- Publication Date:
- Research Org.:
- Ames Lab., Ames, IA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1784536
- Report Number(s):
- IS-J-10,486
Journal ID: ISSN 0031-9007; TRN: US2210203
- Grant/Contract Number:
- AC02-07CH11358
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review Letters
- Additional Journal Information:
- Journal Volume: 126; Journal Issue: 17; Journal ID: ISSN 0031-9007
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Liu, Chen, Zhou, Yinong, Wang, Guanyong, Yin, Yin, Li, Can, Huang, Haili, Guan, Dandan, Li, Yaoyi, Wang, Shiyong, Zheng, Hao, Liu, Canhua, Han, Yong, Evans, James W., Liu, Feng, and Jia, Jinfeng. Sierpinski Structure and Electronic Topology in Bi Thin Films on InSb(111)B Surfaces. United States: N. p., 2021.
Web. doi:10.1103/physrevlett.126.176102.
Liu, Chen, Zhou, Yinong, Wang, Guanyong, Yin, Yin, Li, Can, Huang, Haili, Guan, Dandan, Li, Yaoyi, Wang, Shiyong, Zheng, Hao, Liu, Canhua, Han, Yong, Evans, James W., Liu, Feng, & Jia, Jinfeng. Sierpinski Structure and Electronic Topology in Bi Thin Films on InSb(111)B Surfaces. United States. https://doi.org/10.1103/physrevlett.126.176102
Liu, Chen, Zhou, Yinong, Wang, Guanyong, Yin, Yin, Li, Can, Huang, Haili, Guan, Dandan, Li, Yaoyi, Wang, Shiyong, Zheng, Hao, Liu, Canhua, Han, Yong, Evans, James W., Liu, Feng, and Jia, Jinfeng. Fri .
"Sierpinski Structure and Electronic Topology in Bi Thin Films on InSb(111)B Surfaces". United States. https://doi.org/10.1103/physrevlett.126.176102. https://www.osti.gov/servlets/purl/1784536.
@article{osti_1784536,
title = {Sierpinski Structure and Electronic Topology in Bi Thin Films on InSb(111)B Surfaces},
author = {Liu, Chen and Zhou, Yinong and Wang, Guanyong and Yin, Yin and Li, Can and Huang, Haili and Guan, Dandan and Li, Yaoyi and Wang, Shiyong and Zheng, Hao and Liu, Canhua and Han, Yong and Evans, James W. and Liu, Feng and Jia, Jinfeng},
abstractNote = {Deposition of Bi on InSb(111)B reveals a striking Sierpinski-triangle (ST)-like structure in Bi thin films. Such a fractal geometric topology is further shown to turn off the intrinsic electronic topology in a thin film. Relaxation of a huge misfit strain of about 30 to 40% between Bi adlayer and substrate is revealed to drive the ST-like island formation. A Frenkel-Kontrova model is developed to illustrate the enhanced strain relief in the ST islands offsetting the additional step energy cost. Besides a sufficiently large tensile strain, forming ST-like structures also requires larger adlayer-substrate and intra-adlayer elastic stiffnesses, and weaker intra-adlayer interatomic interactions.},
doi = {10.1103/physrevlett.126.176102},
journal = {Physical Review Letters},
number = 17,
volume = 126,
place = {United States},
year = {Fri Apr 30 00:00:00 EDT 2021},
month = {Fri Apr 30 00:00:00 EDT 2021}
}
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