skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Molecular beam epitaxy of bilayer Bi(111) films on topological insulator Bi{sub 2}Te{sub 3}: A scanning tunneling microscopy study

Abstract

We report on molecular beam epitaxy growth of bilayer Bi(111) films on topological insulator Bi{sub 2}Te{sub 3}. In situ scanning tunneling microscopy/spectroscopy shows that Bi growth mode changes from quasi bilayer-by-bilayer to step-flow with increasing substrate temperature. Bilayer Bi(111) exhibits an electron donor behavior, causing an 80 meV downshift of the Dirac point of Bi{sub 2}Te{sub 3}. Local work function difference between the bilayer films and Bi{sub 2}Te{sub 3} films is measured to be 390 meV. Based on the observations, we propose a schematic energy-band diagram which reveals band bending effect at the Bi/Bi{sub 2}Te{sub 3} interface. Our work paves a way to explore the exotic topological properties of bilayer islands and thin films of Bi.

Authors:
;  [1]; ; ; ; ;  [1]
  1. State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)
Publication Date:
OSTI Identifier:
22089391
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 101; Journal Issue: 8; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; BEAMS; BENDING; BINDING ENERGY; BISMUTH; BISMUTH TELLURIDES; ELECTRONIC STRUCTURE; INTERFACES; LAYERS; MOLECULAR BEAM EPITAXY; MOLECULAR STRUCTURE; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR MATERIALS; SPECTROSCOPY; SUBSTRATES; THIN FILMS; WORK FUNCTIONS

Citation Formats

Mu, Chen, Qikun, Xue, State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, Junping, Peng, Huimin, Zhang, Lili, Wang, Ke, He, and Xucun, Ma. Molecular beam epitaxy of bilayer Bi(111) films on topological insulator Bi{sub 2}Te{sub 3}: A scanning tunneling microscopy study. United States: N. p., 2012. Web. doi:10.1063/1.4747715.
Mu, Chen, Qikun, Xue, State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, Junping, Peng, Huimin, Zhang, Lili, Wang, Ke, He, & Xucun, Ma. Molecular beam epitaxy of bilayer Bi(111) films on topological insulator Bi{sub 2}Te{sub 3}: A scanning tunneling microscopy study. United States. doi:10.1063/1.4747715.
Mu, Chen, Qikun, Xue, State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, Junping, Peng, Huimin, Zhang, Lili, Wang, Ke, He, and Xucun, Ma. Mon . "Molecular beam epitaxy of bilayer Bi(111) films on topological insulator Bi{sub 2}Te{sub 3}: A scanning tunneling microscopy study". United States. doi:10.1063/1.4747715.
@article{osti_22089391,
title = {Molecular beam epitaxy of bilayer Bi(111) films on topological insulator Bi{sub 2}Te{sub 3}: A scanning tunneling microscopy study},
author = {Mu, Chen and Qikun, Xue and State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084 and Junping, Peng and Huimin, Zhang and Lili, Wang and Ke, He and Xucun, Ma},
abstractNote = {We report on molecular beam epitaxy growth of bilayer Bi(111) films on topological insulator Bi{sub 2}Te{sub 3}. In situ scanning tunneling microscopy/spectroscopy shows that Bi growth mode changes from quasi bilayer-by-bilayer to step-flow with increasing substrate temperature. Bilayer Bi(111) exhibits an electron donor behavior, causing an 80 meV downshift of the Dirac point of Bi{sub 2}Te{sub 3}. Local work function difference between the bilayer films and Bi{sub 2}Te{sub 3} films is measured to be 390 meV. Based on the observations, we propose a schematic energy-band diagram which reveals band bending effect at the Bi/Bi{sub 2}Te{sub 3} interface. Our work paves a way to explore the exotic topological properties of bilayer islands and thin films of Bi.},
doi = {10.1063/1.4747715},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 8,
volume = 101,
place = {United States},
year = {2012},
month = {8}
}