Study of the crystal structure of SnS thin films by atomic layer deposition

Zhao, Xizhu; Davis, Luke M.; Lou, Xiabing; Kim, Sang Bok; Uličná, Soňa; Jayaraman, Ashwin; Yang, Chuanxi; Schelhas, Laura T.; Gordon, Roy

doi:10.1063/5.0032782

Title: Study of the crystal structure of SnS thin films by atomic layer deposition

Abstract

Tin monosulfide, SnS, absorbs visible light and holds promise for thin-film photovoltaics. However, the optoelectronic properties of this material vary among the different structural phases, and control over the phase of vapor deposited SnS thin films is not well understood. In order to study the phases and crystallographic orientations of SnS films, films with thicknesses of 90 nm–750nm were prepared by atomic layer deposition (ALD) at temperatures between 80 °C and 200 °C on amorphous silicon dioxide (a-SiO2) and single-crystal sodium chloride (NaCl). We show that the crystal structures and orientations of the ALD-SnS thin films vary with deposition temperature, film thickness, and substrate. We confirm the presence of metastable cubic π-SnS in co-existence with the thermodynamically stable orthorhombic α-SnS and find that the π phase is more prevalent at lower deposition temperatures. The films grown on a-SiO2 are textured, the degree of texturing increases with lower temperature or higher thickness, and the deposited phase is also thickness dependent. Upon annealing, which is known to promote SnS grain growth, all films revert to orthorhombic α-SnS. The films grown on the NaCl(100) substrate exhibit a much higher degree of texturing and show different preferred orientations dependent on the phase: π-(400) andmore »« less

Authors:

^[1];

^[2];

^[1];

^[2];

^[1]

Harvard Univ., Cambridge, MA (United States)
SLAC National Accelerator Lab., Menlo Park, CA (United States)

Publication Date:: Mon Mar 29 00:00:00 EDT 2021

Research Org.:: SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Synchrotron Radiation Lightsource (SSRL); Energy Frontier Research Centers (EFRC) (United States). Center for Next Generation of Materials Design (CNGMD)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)

OSTI Identifier:: 1781601

Alternate Identifier(s):: OSTI ID: 1773184

Grant/Contract Number:: UGA-0-41029-16/ER392000; AC02-76SF00515

Resource Type:: Accepted Manuscript

Journal Name:: AIP Advances

Additional Journal Information:: Journal Volume: 11; Journal Issue: 3; Journal ID: ISSN 2158-3226

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; Atomic layer deposition; Photovoltaics; High resolution X-ray diffraction; Synchrotrons; Epitaxy; Thin films; Optoelectronic properties; Electrical properties and parameters; Phase transitions; Crystal structure

Citation Formats


                    Zhao, Xizhu, Davis, Luke M., Lou, Xiabing, Kim, Sang Bok, Uličná, Soňa, Jayaraman, Ashwin, Yang, Chuanxi, Schelhas, Laura T., and Gordon, Roy. Study of the crystal structure of SnS thin films by atomic layer deposition.  United States: N. p., 2021. 
Web.  doi:10.1063/5.0032782.

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                    Zhao, Xizhu, Davis, Luke M., Lou, Xiabing, Kim, Sang Bok, Uličná, Soňa, Jayaraman, Ashwin, Yang, Chuanxi, Schelhas, Laura T., & Gordon, Roy. Study of the crystal structure of SnS thin films by atomic layer deposition.  United States.  https://doi.org/10.1063/5.0032782

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                    Zhao, Xizhu, Davis, Luke M., Lou, Xiabing, Kim, Sang Bok, Uličná, Soňa, Jayaraman, Ashwin, Yang, Chuanxi, Schelhas, Laura T., and Gordon, Roy. Mon .  
"Study of the crystal structure of SnS thin films by atomic layer deposition".  United States.  https://doi.org/10.1063/5.0032782.  https://www.osti.gov/servlets/purl/1781601.

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@article{osti_1781601,

  title        = {Study of the crystal structure of SnS thin films by atomic layer deposition},

  author       = {Zhao, Xizhu and Davis, Luke M. and Lou, Xiabing and Kim, Sang Bok and Uličná, Soňa and Jayaraman, Ashwin and Yang, Chuanxi and Schelhas, Laura T. and Gordon, Roy},

  abstractNote = {Tin monosulfide, SnS, absorbs visible light and holds promise for thin-film photovoltaics. However, the optoelectronic properties of this material vary among the different structural phases, and control over the phase of vapor deposited SnS thin films is not well understood. In order to study the phases and crystallographic orientations of SnS films, films with thicknesses of 90 nm–750nm were prepared by atomic layer deposition (ALD) at temperatures between 80 °C and 200 °C on amorphous silicon dioxide (a-SiO2) and single-crystal sodium chloride (NaCl). We show that the crystal structures and orientations of the ALD-SnS thin films vary with deposition temperature, film thickness, and substrate. We confirm the presence of metastable cubic π-SnS in co-existence with the thermodynamically stable orthorhombic α-SnS and find that the π phase is more prevalent at lower deposition temperatures. The films grown on a-SiO2 are textured, the degree of texturing increases with lower temperature or higher thickness, and the deposited phase is also thickness dependent. Upon annealing, which is known to promote SnS grain growth, all films revert to orthorhombic α-SnS. The films grown on the NaCl(100) substrate exhibit a much higher degree of texturing and show different preferred orientations dependent on the phase: π-(400) and α-(111) or α-(040). In addition, we demonstrate a proof-of-concept device made from the highly oriented SnS grown on NaCl.},

  doi          = {10.1063/5.0032782},

  journal      = {AIP Advances},

  number       = 3,

  volume       = 11,

  place        = {United States},

  year         = {Mon Mar 29 00:00:00 EDT 2021},

  month        = {Mon Mar 29 00:00:00 EDT 2021}

}

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Title: Study of the crystal structure of SnS thin films by atomic layer deposition

Abstract

Citation Formats

Molecular beam epitaxy growth of high quality p-doped SnS van der Waals epitaxy on a graphene buffer layer journal, May 2012

A review of tin (II) monosulfide and its potential as a photovoltaic absorber journal, June 2016

Formation of metastable cubic phase in SnS thin films fabricated by thermal evaporation journal, October 2017

Synthesis of SnS Thin Films by Atomic Layer Deposition at Low Temperatures journal, September 2017

Atomic Layer Deposition of Tin Monosulfide Using Vapor from Liquid Bis( N , N ′-diisopropylformamidinato)tin(II) and H 2 S journal, November 2019

Photovoltaic properties of SnS based solar cells journal, November 2006

Phase Stability of the Earth-Abundant Tin Sulfides SnS, SnS 2 , and Sn 2 S 3 journal, November 2012

Co-optimization of SnS absorber and Zn(O,S) buffer materials for improved solar cells: SnS absorber and Zn(O,S) buffer materials for improved solar cells journal, May 2014

Chemical and Lattice Stability of the Tin Sulfides journal, March 2017

Polymorphic Tin Sulfide Thin Films of Zinc Blende and Orthorhombic Structures by Chemical Deposition journal, January 2008

New Nanocrystalline Materials: A Previously Unknown Simple Cubic Phase in the SnS Binary System journal, February 2015

Preparation of SnS films with zinc blende structure by successive ionic layer adsorption and reaction method journal, October 2010

Vapor transport deposition and epitaxy of orthorhombic SnS on glass and NaCl substrates journal, July 2013

Atomic Layer Deposition of Cubic and Orthorhombic Phase Tin Monosulfide journal, March 2017

Measurement of contact resistivity at metal-tin sulfide (SnS) interfaces journal, July 2017

Growth of high-quality SnS epitaxial films by H 2 S flow pulsed laser deposition journal, February 2014

Characterization of vacuum-evaporated tin sulfide film for solar cell materials journal, September 1994

Overcoming Efficiency Limitations of SnS-Based Solar Cells journal, June 2014

Atomic Layer Deposition of Tin Monosulfide Thin Films journal, September 2011

Polymorphism in some Iv‐Vi Compounds Induced by high Pressure and Thin‐Film Epitaxial Growth journal, May 1967

The effect of substrate surface on the physical properties of SnS films journal, September 2006

Tetrahedral Zinc Blende Tin Sulfide Nano- and Microcrystals journal, March 2006

Metastable cubic tin sulfide: A novel phonon-stable chiral semiconductor journal, March 2017

Erratum: “Angular Distribution for the N 14 ( p , d )N 15 Ground State Reaction” journal, January 1962

Investigations on SnS journal, October 1961

Struktur und optische Eigenschaften von epitaxialen SnTe-, SnSe- und SnS-Schichten journal, January 1968

Cubic and orthorhombic SnS thin-film absorbers for tin sulfide solar cells: Cubic and orthorhombic SnS thin-film absorbers journal, October 2015

Making Record-efficiency SnS Solar Cells by Thermal Evaporation and Atomic Layer Deposition journal, January 2015

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Molecular beam epitaxy growth of high quality p-doped SnS van der Waals epitaxy on a graphene buffer layer
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A review of tin (II) monosulfide and its potential as a photovoltaic absorber
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Formation of metastable cubic phase in SnS thin films fabricated by thermal evaporation
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Synthesis of SnS Thin Films by Atomic Layer Deposition at Low Temperatures
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Atomic Layer Deposition of Tin Monosulfide Using Vapor from Liquid Bis( N , N ′-diisopropylformamidinato)tin(II) and H ₂ S
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Photovoltaic properties of SnS based solar cells
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