Solvent-Free Coating of Organic Semiconductor Membranes with Centimetric Crystalline Domains
Abstract
Abstract Organic semiconductors (OSCs) have shown great promise in a variety of applications. Although solution processing of OSCs has resulted in high‐quality films, exquisite control of structural development to minimize defect formation during large‐scale fabrication remains formidable. Compounding this challenge is the use of halogenated organic solvents, which poses significant health and environmental hazards. However, the solvent‐free techniques introduced thus far impose additional limitations on solidification kinetics; the resulting OSC thin films are often more defective than those processed from solution. Here, a solvent‐free technique is reported to prepare OSC membranes with centimetric crystalline domains. Leveraging the tendency for liquid crystalline materials to preferentially orient, OSCs are “prealigned” by depositing them from the melt over a metal frame to form a freely suspended membrane. Crystallization from this prealigned phase affords membranes with unprecedented structural order across macroscopic distances. Field‐effect transistors comprising membranes of dioctyl[1]‐benzothieno[3,2‐b][1]benzothiophene (C8BTBT) and didodecyl[1]‐benzothieno[3,2‐b][1]benzothiophene (C12BTBT) having centimeter‐sized domains as active layers exhibit a hole mobility of ≈8.6 cm 2 V −1 s −1 , superseding the mobility of any transistors whose active layers are deposited from melt. This technique is scalable to yield membranes with large crystalline domains over wafer dimensions, making it amenable for broad applicationsmore »
- Authors:
-
[5]
- Princeton Univ., NJ (United States)
- Brookhaven National Lab. (BNL), Upton, NY (United States). National Synchrotron Light Source II (NSLS-II)
- Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)
- Peking Univ., Shenzhen (China)
- Princeton Univ., NJ (United States); Princeton Univ., NJ (United States). Andlinger Center for Energy and the Environment
- Publication Date:
- Research Org.:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)
- OSTI Identifier:
- 1773113
- Alternate Identifier(s):
- OSTI ID: 1804239
- Report Number(s):
- BNL-221219-2021-JAAM
Journal ID: ISSN 2199-160X
- Grant/Contract Number:
- SC0012704; DMR‐1420541; CMMI‐1824674
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Advanced Electronic Materials
- Additional Journal Information:
- Journal Volume: 7; Journal Issue: 3; Journal ID: ISSN 2199-160X
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; melt processing; organic semiconductors; single crystals; smectic liquid crystals; solvent-free coatings
Citation Formats
Xia, Yu, Li, Ruipeng, Tsai, Esther, He, Yaowu, Liu, Tianran, Zhao, Xiaoming, Gu, Kaichen, Meng, Hong, and Loo, Yueh‐Lin. Solvent-Free Coating of Organic Semiconductor Membranes with Centimetric Crystalline Domains. United States: N. p., 2021.
Web. doi:10.1002/aelm.202000792.
Xia, Yu, Li, Ruipeng, Tsai, Esther, He, Yaowu, Liu, Tianran, Zhao, Xiaoming, Gu, Kaichen, Meng, Hong, & Loo, Yueh‐Lin. Solvent-Free Coating of Organic Semiconductor Membranes with Centimetric Crystalline Domains. United States. https://doi.org/10.1002/aelm.202000792
Xia, Yu, Li, Ruipeng, Tsai, Esther, He, Yaowu, Liu, Tianran, Zhao, Xiaoming, Gu, Kaichen, Meng, Hong, and Loo, Yueh‐Lin. Thu .
"Solvent-Free Coating of Organic Semiconductor Membranes with Centimetric Crystalline Domains". United States. https://doi.org/10.1002/aelm.202000792. https://www.osti.gov/servlets/purl/1773113.
@article{osti_1773113,
title = {Solvent-Free Coating of Organic Semiconductor Membranes with Centimetric Crystalline Domains},
author = {Xia, Yu and Li, Ruipeng and Tsai, Esther and He, Yaowu and Liu, Tianran and Zhao, Xiaoming and Gu, Kaichen and Meng, Hong and Loo, Yueh‐Lin},
abstractNote = {Abstract Organic semiconductors (OSCs) have shown great promise in a variety of applications. Although solution processing of OSCs has resulted in high‐quality films, exquisite control of structural development to minimize defect formation during large‐scale fabrication remains formidable. Compounding this challenge is the use of halogenated organic solvents, which poses significant health and environmental hazards. However, the solvent‐free techniques introduced thus far impose additional limitations on solidification kinetics; the resulting OSC thin films are often more defective than those processed from solution. Here, a solvent‐free technique is reported to prepare OSC membranes with centimetric crystalline domains. Leveraging the tendency for liquid crystalline materials to preferentially orient, OSCs are “prealigned” by depositing them from the melt over a metal frame to form a freely suspended membrane. Crystallization from this prealigned phase affords membranes with unprecedented structural order across macroscopic distances. Field‐effect transistors comprising membranes of dioctyl[1]‐benzothieno[3,2‐b][1]benzothiophene (C8BTBT) and didodecyl[1]‐benzothieno[3,2‐b][1]benzothiophene (C12BTBT) having centimeter‐sized domains as active layers exhibit a hole mobility of ≈8.6 cm 2 V −1 s −1 , superseding the mobility of any transistors whose active layers are deposited from melt. This technique is scalable to yield membranes with large crystalline domains over wafer dimensions, making it amenable for broad applications in large‐area organic electronics.},
doi = {10.1002/aelm.202000792},
journal = {Advanced Electronic Materials},
number = 3,
volume = 7,
place = {United States},
year = {Thu Jan 21 00:00:00 EST 2021},
month = {Thu Jan 21 00:00:00 EST 2021}
}
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